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Method for realizing silicon-silicon bonding by using diffusion and mutual dissolution of metal material

A technology of metal materials and metal silicides, applied in the field of semiconductor manufacturing, to achieve the effects of increasing bonding strength, loose bonding conditions, and excellent bonding airtightness

Inactive Publication Date: 2015-12-30
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to provide a method for realizing silicon-silicon bonding by using the diffusion and mutual dissolution of metal materials. Excellent, can solve the stress problem caused by high temperature bonding conditions or intermediate heterogeneous layers in traditional methods

Method used

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  • Method for realizing silicon-silicon bonding by using diffusion and mutual dissolution of metal material
  • Method for realizing silicon-silicon bonding by using diffusion and mutual dissolution of metal material
  • Method for realizing silicon-silicon bonding by using diffusion and mutual dissolution of metal material

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Experimental program
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Embodiment 1

[0031] Embodiment 1, concrete process is as follows:

[0032] (1) Get a first silicon wafer 1, which is a single-polish N-type (100) substrate, carry out inorganic cleaning, and rinse the surface of the wafer with a buffered hydrofluoric acid solution;

[0033] (2) Get a second silicon wafer 3, which is a single-polish N-type (100) substrate, carry out inorganic cleaning, and rinse the surface of the wafer with a buffered hydrofluoric acid solution;

[0034] (3) Adopt Denton magnetron sputtering system, prepare film layer 2 on the first silicon chip 1, the material of this film layer 2 is W, and thickness is

[0035] (4) Place the side of the first silicon wafer 1 prepared with the thin film layer 2 and the second silicon wafer 3 in the SUSS bonding machine, vacuumize and raise the temperature to 500 ° C, and then use the disc pressure method to bond the A pressure of 2000N was applied to the sheet, and it was maintained at 500°C and a pressure of 2000N for 30 minutes. Aft...

Embodiment 2

[0036] Embodiment 2, concrete process is as follows:

[0037] (1) Get a first silicon chip 1, which is a double-polishing N-type (100) substrate, carry out inorganic cleaning, and rinse the surface of the chip with a buffered hydrofluoric acid solution;

[0038] (2) Get a second silicon chip 3, which is a double-throwing N-type (100) substrate chip, carry out inorganic cleaning, and rinse the chip surface with a buffered hydrofluoric acid solution;

[0039] (3) adopt Denton magnetron sputtering system, prepare film layer 2 on the first silicon chip 1, the material of this film layer 2 is Ti, and thickness is And the thin film layer 2 is patterned according to the requirements of the device packaging cavity.

[0040] (4) A cavity structure is prepared on the first silicon wafer 1 by using an ICP etching process, and the etching depth is determined according to device packaging requirements.

[0041] (5) The first silicon chip 1 with the cavity structure is prepared with the ...

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Abstract

The invention discloses a method for realizing silicon-silicon bonding by using diffusion and mutual dissolution of a metal material. According to the principle, diffusion and mutual dissolution of the metal material and silicon are used for bonding silicon wafers. The method has the advantages of simple technology, high bonding strength, good airtightness and the wide application range. The bonding method includes the steps that a film layer is prepared on a first silicon wafer, a film layer is prepared or not prepared on a second silicon wafer, and thermocompression bonding is carried out on the first silicon wafer (1) and the second silicon wafer (3) on the conditions of certain temperature and certain pressure. The principle of diffusion and mutual dissolution of the metal material and the silicon is used for realizing effective silicon-silicon bonding, and the thin films / film are / is the bonding material and can be obtained easily through a conventional deposition technology; due to existence of thin layer metal and the good malleability of the metal, the requirements for the surface evenness and the surface roughness of the bonding material are greatly reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and specifically relates to a method for realizing silicon-silicon bonding by using metal material diffusion and mutual dissolution. The method can effectively realize the bonding between silicon and silicon, and realize specific The packaging of atmosphere or specific vacuum degree lays the foundation for the flexible manufacturing of packaging of various silicon-based MEMS devices and related devices. Background technique [0002] Micro-electro-mechanical system MEMS, with its advantages of miniaturization, intelligence, integration and low cost, is widely used in national economy and military systems. MEMS products include accelerometers, pressure sensors, gyroscopes, etc. With the improvement of intelligent systems, more complex new MEMS structures and integrated packaging of MEMS and ICs have become technical bottlenecks that need to be broken through in the marketization...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C3/00
Inventor 赵永梅何志季安王晓峰黄亚军潘岭峰樊中朝王晓东杨富华
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI