Self-adaptive fiber used in Z-pinch wire-array loads and preparing method thereof

Abstract

The invention provides a self-adaptive fiber used in Z-pinch wire-array loads and a preparing method thereof. The self-adaptive fiber is prepared from aliphatic series oligomer diol with the molecular weight of 500-10000, high-symmetry aromatic diisocyanate and a high-symmetry aromatic diamine compound. According to the preparing method of the self-adaptive fiber, at first, aliphatic series oligomer diol with a certain mole number and high-symmetry aromatic diisocyanate with the mole number being twice that of diol are adopted for carrying out prepolymerization, and high-symmetry aromatic diamine is used for carrying out chain extension so that a spinning solution can be prepared; finally, any one of a solution dry method and a solution wet method is adopted for carrying out spinning, forming and processing. In the self-adaptive fiber, cohesion energy density in a hard chain section is high, binding force of the hard chain section is large, dimensional stability is high, rebound resilience is good, and stress stability is high; according to the self-adaptive fiber, during the whole service period, obvious stress relaxation is avoided, and rebound stress can be kept unchanged for a long term.

Description

technical field

[0001] The invention belongs to the field of Z-pinch wire array load, and in particular relates to an adaptive fiber used for Z-pinch wire array load and a preparation method thereof. Background technique

[0002] In the research of inertial confinement fusion driven by Z-pinch, silk array is currently an ideal load. It forms plasma under the action of high current in pulse power device, and under the action of Lorentz force, it quickly pinches inward and generates high temperature. , High-density plasma. The precise control of the initial state of the wire array, such as the uniformity of the diameter of the ultra-fine wire, the uniform arrangement of the ultra-fine wire in the radial and angular directions of the electrode, and the straightness of the ultra-fine wire, is the key to obtaining high symmetry, high function and high energy radiation. source key.

[0003] The installation of the wire array in the target chamber of the driving device is carried...

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