A method of coating the inner wall of an atomic gas to slow down the relaxation of atomic spins

Abstract

The invention provides a method for coating the inner wall of an atomic gas chamber for slowing down the relaxation of atomic spins. The method firstly uses rubidium atom vapor to fill the atomic gas chamber, and then passes through a hydride solid gas release agent (such as titanium hydride, calcium hydride, etc.) Release hydrogen gas with a pressure of 10Torr to 100Torr into the atomic gas chamber, and keep it at a temperature of 50°C to 150°C for tens to hundreds of hours. A layer of rubidium hydride film will be attached to the inner wall of the atomic gas chamber, and finally the residual hydrogen in the gas chamber will be evacuated , to end the coating process, the present invention uses a solid gas release agent to generate hydrogen in the above coating process, compared with the traditional use of high-pressure hydrogen cylinders as a hydrogen source, it improves the process safety of rubidium hydride coating on the inner wall of the atomic gas, and the hydrogenation After rubidium coating, the residual hydrogen in the gas chamber is evacuated, which is beneficial to improve the stability of the performance of the atomic gas chamber compared with directly sealing the hydrogen in the gas chamber.

Description

technical field [0001] The invention relates to the technical field of atomic gas chamber preparation, in particular to a coating method for the inner wall of atomic gas chambers which slows down the relaxation of atomic spins. Background technique [0002] The atomic sensing gas cell is the core physical component of atomic sensing instruments such as atomic inertial instruments, atomic clocks, and atomic magnetometers. Its performance parameters directly affect the performance of such sensing instruments. A typical atomic gas chamber uses optical glass to encapsulate rubidium, cesium and other alkali metal atoms in a vacuum or inert gas atmosphere, and fills with a certain pressure of inert gas as working gas and buffer gas. [0003] In the atomic gas chamber, while the atoms obtain spin polarization, there is also a macroscopic spin loss process caused by the collision of atoms with the inner wall of the gas chamber. The time from polarization to loss of atomic spins, ca...

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Problems solved by technology

In the above process, there are mainly the following problems. One is that the RbH coating is formed after the atomic gas chamber is sealed. Since the atomic gas chamber is in a sealed state during this process, the amount of free rubidium atoms in the atomic gas chamber decreases with the formation of the RbH film. At the same time, H in the gas chamber 2 The gas pressure changes, so as the baking time goes by, the performance of the atomic gas chamber will change, which increases the uncontrollable risk in the preparation of the atomic gas chamber; in addition, because high-pressure hydrogen is used as the hydrogen source in the coating process, the above There is a greater risk in the coating process

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