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Method for preparing spherical nanometer silicon by virtue of thermal plasma method

A thermal plasma and nano-silicon technology, applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve the problems of potential safety hazards, high raw material cost of high-purity silane silicon-containing gas, etc., and achieve low raw material cost and high yield , The effect of high process safety

Inactive Publication Date: 2017-05-24
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the yield has been improved, there is still a certain gap between the high-purity silane silicon-containing gas raw material cost and the existence of certain safety hazards, and the demand for industrial production.

Method used

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  • Method for preparing spherical nanometer silicon by virtue of thermal plasma method
  • Method for preparing spherical nanometer silicon by virtue of thermal plasma method
  • Method for preparing spherical nanometer silicon by virtue of thermal plasma method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] The method for preparing spherical nano-silicon by utilizing thermal plasma method, its specific steps are as follows:

[0027] (1) Put the micron-sized silicon-containing powder as raw material into the powder feeder, and the powder feeding outlet of the powder feeder is connected with the feed port of the DC high-temperature plasma generator, wherein the micron-sized silicon-containing powder is over 200 Mesh sieve silicon powder, the purity is 99.9%;

[0028] (2) Put industrial grade gas (argon, flow rate is 1m 3 / h) into the plasma generator, arc ignition to obtain hot plasma;

[0029] (3) Turn on the powder feeder, and the micron-sized silicon-containing powder feeds at a speed of 10g / min. The carrier gas (argon) is sent to the plasma torch through the feed port on the side of the plasma generator at a temperature of 10 4 In the high-temperature region above K, the micron-sized silicon-containing powder is gasified / decomposed into gaseous silicon atoms and other ...

Embodiment 2

[0035] The method for preparing spherical nano-silicon by utilizing thermal plasma method, its specific steps are as follows:

[0036] (1) Put the micron-sized silicon-containing powder as raw material into the powder feeder, and the powder feeding outlet of the powder feeder is connected to the feed port of the DC high-temperature plasma generator, wherein the micron-sized silicon-containing powder is over 325 Mesh sieve silicon powder, the purity is 99.9%;

[0037] (2) Mix industrial-grade gas (the volume ratio of argon to methane is 10:1, and the flow rate of the mixed gas is 30m 3 / h) into the plasma generator, arc ignition to obtain hot plasma;

[0038] (3) Turn on the powder feeder, and the micron-sized silicon-containing powder is fed at a speed of 8g / min through the carrier gas (a mixture of argon and methane with a volume ratio of 10:1) and is sent through the feed port located on the side of the plasma generator. into the plasma torch at a temperature of 10 4 In t...

Embodiment 3

[0044] The method for preparing spherical nano-silicon by utilizing thermal plasma method, its specific steps are as follows:

[0045] (1) Put the micron-sized silicon-containing powder as raw material into the powder feeder, and the powder feeding outlet of the powder feeder is connected with the feed port of the DC high-temperature plasma generator, wherein the micron-sized silicon-containing powder is over 200 Mesh sieve silicon nitride powder with a purity of 99.9%;

[0046] (2) Put industrial grade gas (argon, flow rate is 15m 3 / h) into the plasma generator, arc ignition to obtain hot plasma;

[0047] (3) Turn on the powder feeder, and the micron-sized silicon-containing powder feeds at a speed of 14g / min. The carrier gas (argon) is sent to the plasma torch through the feed port on the side of the plasma generator at a temperature of 10 4 In the high-temperature region above K, the micron-sized silicon-containing powder is gasified / decomposed into gaseous silicon atoms...

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Abstract

The invention relates to a method for preparing spherical nanometer silicon by virtue of a thermal plasma method, and belongs to the technical fields of silicon metallurgy and material preparation. The method comprises the following steps: introducing industrial gas or mixed gas into a plasma generator, performing arc striking to obtain a thermal plasma, causing micron-sized silicon-containing powder to enter a high-temperature thermal plasma region to obtain gaseous silicon atoms and other gaseous particles through carrier gas, and quickly chilling the gaseous silicon atoms and the other gaseous particles to obtain spherical nanometer silicon with nanometer particle sizes of 1 to 100 nm, wherein the micron-sized silicon-containing powder is micron-sized silicon powder, silicon oxide powder, silicon nitride powder or silicon carbide powder. According to the method, the silicon-containing powder such as the silicon powder, the silicon oxide powder, the silicon nitride powder and the silicon carbide powder is adopted as a raw material, and compared with the prior art that silane with relatively high cost is adopted as a main silicon-containing raw material, the method has the advantages of lower raw material cost, higher process safety and the like.

Description

technical field [0001] The invention relates to a method for preparing spherical nano-silicon by using a thermal plasma method, and belongs to the technical field of silicon metallurgy and material preparation. Background technique [0002] Since the birth of nanotechnology in the late 1980s, people have understood the world from a new level through in-depth research on nanomaterials. Nanoparticles are obviously different from ordinary particles in terms of electricity, magnetism, heat, light, sensitive properties and surface stability, so they have broader application fields. Among them, nano-silicon can be used in lithium battery anode materials, third-generation solar cell materials, semiconductor microelectronic packaging materials, and catalytic water splitting to produce hydrogen. [0003] The commonly used preparation methods of nanoparticles include milling method, solid phase method, liquid phase method and gas phase method. The milling method grinds large particl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/021
CPCC01B33/021C01P2004/64C01P2004/04C01P2004/03C01P2002/76C01P2002/72C01P2004/32
Inventor 马文会万小涵李绍元魏奎先伍继君雷云于洁谢克强杨斌戴永年
Owner KUNMING UNIV OF SCI & TECH
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