YAB/SiO2 near-infrared micro-nano luminescent material and preparation method and application thereof

A luminescent material, micro-nano technology, applied in luminescent materials, chemical instruments and methods, photovoltaic power generation, etc., can solve the limitation of the improvement of solar cell efficiency, the inability to use sunlight at a high level, and the decrease in light transmittance of EVA film, etc. problems, to achieve the effect of improving transmittance, easy long-term storage, and stable fluorescence performance

Inactive Publication Date: 2016-02-24
余景武
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The limitations of these existing near-infrared light conversion materials lead to their inability to utilize sunlight at a high level, which limits the improvement of solar cell efficiency.
On the other hand, the application of the light-converting EVA film has not yet been reported. The main reason is that the above-mentioned infrared light conversion material is added to the EVA film, which will cause the light transmittance of the EVA film to decrease, which will reduce the photoelectric conversion of the battery. efficiency

Method used

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  • YAB/SiO2 near-infrared micro-nano luminescent material and preparation method and application thereof
  • YAB/SiO2 near-infrared micro-nano luminescent material and preparation method and application thereof
  • YAB/SiO2 near-infrared micro-nano luminescent material and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] A kind of YAB / SiO provided by the present embodiment 2 The preparation method of the micro-nano near-infrared emitting material, the specific steps are as follows:

[0046] 1) Weigh 99.3608g (0.44mol) Y 2 o 3 , 149.4300g (1.465mol) Al 2 o 3 , 249.2986g (4.033mol) H 3 BO 3 , 24.2548g (0.05mol) Bi (NO 3 ) 3 ·5H 2 O, 13.7900g (0.035mol) Yb 2 o 3 , 28.010g (0.07mol) Cr(NO 3 ) 3 9H 2 O, the raw materials are wet mechanically stirred in 50% absolute ethanol of the total weight of the mixture until uniformly mixed, and ground and mixed;

[0047] 2) Place the above-mentioned raw materials in a blast drying oven, and dry them at 80°C;

[0048] 3) heating the dried powder to 1200°C in a high-temperature furnace (heating rate 2°C / min), and sintering at a high temperature for 6 hours to obtain a YAB near-infrared luminescent material;

[0049] 4) Wash the above-mentioned YAB near-infrared luminescent material after cooling, centrifuge until the supernatant is colorle...

Embodiment 2

[0057] A kind of YAB / SiO provided by the present embodiment 2 The preparation method of the micro-nano near-infrared emitting material, the specific steps are as follows:

[0058] 1) Weigh 99.3608g (0.44mol) Y 2 o 3 , 149.4300g (1.465mol) Al 2 o 3 , 249.2986g (4.033mol) H 3 BO 3 , 24.2548g (0.05mol) Bi (NO 3 ) 3 ·5H 2 O, 13.7900g (0.035mol) Yb 2 o 3 , 28.010g (0.07mol) Cr(NO 3 ) 3 9H 2 O, the raw materials are mixed and stirred evenly in a high-speed disperser;

[0059] 2) The above-mentioned uniformly mixed powder is heated to 1200°C in a high-temperature furnace (heating rate 2°C / min), and sintered at high temperature for 6 hours to obtain a YAB near-infrared luminescent material;

[0060] 3) Take 200g of the above-mentioned YAB near-infrared luminescent material, and after cooling to room temperature, add 80nm nano-SiO 2 16g, after adding agate beads for ball milling and 5ml deionized water, ball mill for 12 hours;

[0061] 4) The above ball-milled slurry is...

Embodiment 3

[0066] A kind of YAB / SiO provided by the present embodiment 2 The preparation method of the micro-nano near-infrared emitting material, the specific steps are as follows:

[0067] 1) Weigh 99.3608g (0.44mol) Y 2 o 3 , 149.4300g (1.465mol) Al 2 o 3 , 249.2986g (4.033mol) H 3 BO 3 , 24.2548g (0.05mol) Bi (NO 3 ) 3 ·5H 2 O, 13.7900g (0.035mol) Yb 2 o 3 , 28.010g (0.07mol) Cr(NO 3 ) 3 9H 2 O, the raw materials are wet mechanically stirred in 50% absolute ethanol of the total weight of the mixture until uniformly mixed, and ground and mixed;

[0068] 2) Place the above-mentioned raw materials in a blast drying oven, and dry them at 120°C;

[0069] 3) heating the dried powder to 1200°C in a high-temperature furnace (heating rate 2°C / min), and sintering at a high temperature for 6 hours to obtain a YAB near-infrared luminescent material;

[0070] 4) after cooling the YAB near-infrared luminescent material prepared above to room temperature, ball milling for 12 hours; ...

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Abstract

The invention relates to a YAB/SiO2 near-infrared micro-nano luminescent material and a preparation method and application thereof. The chemical formula of the near-infrared micro-nano luminescent material is Y[1-y-z]MzAl[3-x](BO3)4:Crx, Yby, wherein M is selected from one or two of Bi and La, x is larger than 0 and smaller than or equal to 0.2, y is larger than 0 and smaller than or equal to 0.2, and z is larger than 0 and smaller than or equal to 0.2. In addition, the invention further relates to luminescence conversion EVA film containing the YAB/SiO2 near-infrared micro-nano luminescent material and a preparation method and application of the film. The YAB/SiO2 near-infrared micro-nano luminescent material is light gray, strong absorption is achieved in an ultraviolet region, the excitation wavelength ranges from 350 nm to 650 nm, and the emission spectrum ranges from 950 nm to 1100 nm. The luminescence conversion EVA film used for photovoltaic cells can better utilize solar energy, improve the light transmissivity of the EVA film and the cell efficiency by 0.5%-1.0% and further improve the aging performance of the EVA film.

Description

technical field [0001] The invention belongs to the field of luminescent material technology and photovoltaic technology, in particular to a YAB / SiO 2 Near-infrared micro-nano luminescent material and its preparation method and application, and containing YAB / SiO 2 A light-converting EVA film of a near-infrared micro-nano luminescent material, a preparation method and an application of the film. Background technique [0002] The efficiency energy loss of traditional silicon solar cells (crystalline silicon is an indirect energy gap semiconductor material with an energy gap of 1.12eV, which can only effectively absorb and utilize 700-1100nm solar photons) mainly has four processes: 1. Heat loss; 2. Interface potential loss; 3. Contact resistance loss; 4. Recombination loss. Among them, heat loss is the most critical heat energy loss. Photoexcitons above the bandgap of silicon are quickly transformed into thermal energy, and all low-energy red photoexcitons and very high-en...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/80H01L31/048C08L23/08C08K3/36C08K3/38
CPCY02E10/50
Inventor 余景武
Owner 余景武
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