Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Nano molybdenum disilicide-enhanced high-thermal-conductivity silicon carbide-based ceramic circuit board substrate material and preparation method thereof

A nano-molybdenum disilicide and silicon carbide-based technology, which is applied in the field of silicon carbide ceramic preparation, can solve the problems of mismatching thermal expansion coefficients, the insulation property needs to be improved, and the large-scale use is restricted, so as to improve the thermal conductivity and sintering stability. Excellent, high-strength effect

Inactive Publication Date: 2016-03-02
HEFEI LONG DUO ELECTRONICS SCI & TECH
View PDF3 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] As the power and density of electronic components increase, the calorific value per unit volume also increases, and the requirements for the comprehensive performance of circuit substrates are getting higher and higher. Among them, ceramic substrates have good comprehensive performance in terms of insulation, thermal conductivity and Thermal expansion, chemical stability and other aspects are outstanding, and are gradually widely used in substrate materials. Among them, alumina and beryllium oxide are mainly used as substrate materials for a long time. However, alumina ceramic sheets have low thermal conductivity and thermal expansion. The coefficient does not match with Si and other shortcomings. Although the comprehensive performance of beryllium oxide ceramics is relatively good, its production cost is high and toxic. Although the comprehensive performance of aluminum nitride ceramics is relatively good, the production cost is high and the application is also limited. Silicon carbide as a substrate material has obvious advantages in terms of performance
[0003] Although the application prospects of silicon carbide ceramic substrates are broad, in the actual production process, there are problems such as low sintering density, low utilization rate of raw materials, and insulation to be improved, which restrict the large-scale use of such materials. Further improvements in the production process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0011] The ceramic material in this example is made of the following raw materials in parts by weight: silicon carbide 60, pyrophyllite 2, nano-molybdenum disilicide 1, nano-alumina 12, silane coupling agent kh5501, glycerin 8, ethylene glycol 5, polyethylene glycol 1. Nano ceramic powder transparent liquid 10, deionized water 50.

[0012] Its preparation method is:

[0013] (1) First disperse silicon carbide and pyrophyllite by ball milling for 12 hours, then add nano-molybdenum disilicide, nano-alumina, and silane coupling agent kh550 to continue mixing and ball milling for 2 hours, then add other remaining materials, airtightly mix ball mill and disperse for 1 hour, and the resulting slurry After the material is completely dried, pass through a 200-mesh sieve;

[0014] (2) Put the above-mentioned sieved powder into a mold for pressing and molding, and the obtained green body is subjected to debinding treatment at 400°C. After the treatment, the green body is sent into a va...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
densityaaaaaaaaaa
Login to View More

Abstract

The invention discloses a nano molybdenum disilicide-enhanced high-thermal-conductivity silicon carbide-based ceramic circuit board substrate material. According to a silicon carbide-based ceramic circuit board substrate, micron-sized silicon carbide powder and nano-sized aluminum oxide powder are compounded for use, so that a blank body is higher in density and better in sintering stability. The sintering temperature can be effectively decreased through added pyrophyllite. Nano molybdenum disilicide has the good reinforcement and toughening effect, can promote the thermal conductivity and does not damage the insulativity of the substrate. A polyethylene glycol complex solvent containing nano-ceramic powder transparent liquid has the high wettability and bonding capability for powder, the various materials can be evenly scattered and coated to form the blank body of a uniform structure, and the composite ceramic substrate with the high density, strength and thermal conductivity can be obtained at the relatively low temperature. The production process is safe and environmentally friendly, and the application potential is great.

Description

technical field [0001] The invention relates to the technical field of preparation of silicon carbide ceramics, in particular to a nanomolybdenum disilicide-reinforced silicon carbide-based ceramic circuit board substrate material with high thermal conductivity and a preparation method thereof. Background technique [0002] As the power and density of electronic components increase, the calorific value per unit volume also increases, and the requirements for the comprehensive performance of circuit substrates are getting higher and higher. Among them, ceramic substrates have good comprehensive performance in terms of insulation, thermal conductivity and Thermal expansion, chemical stability and other aspects are outstanding, and are gradually widely used in substrate materials. Among them, alumina and beryllium oxide are mainly used as substrate materials for a long time. However, alumina ceramic sheets have low thermal conductivity and thermal expansion. The coefficient doe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/565C04B35/622
Inventor 王丹丹王乐平夏运明涂聚友
Owner HEFEI LONG DUO ELECTRONICS SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products