Graphite depositing device for chemical vapor deposition furnace

A chemical vapor deposition and deposition device technology, which is applied in the field of graphite deposition devices for chemical vapor deposition furnaces, can solve the problems of uneven product thickness, low production efficiency, and high production costs

Active Publication Date: 2016-03-23
安徽光智科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In general chemical vapor deposition systems, the graphite deposition devices used are basically single chambers, that is, only one deposition chamber is set up in the entire deposition system. This single chamber graphite deposition component is more suitable for small furnaces. Convenient, but for furnaces used in large-scale industrial production, in the process of chemical vapor deposition, defects of uneven thickness of products produced in the entire deposition chamber usually appear, which reduces the utilization rate of products and increases the back-end processing difficulty
Moreover, the graphite deposition device using a single chamber not only has relatively high production costs, but also is inconvenient to operate, resulting in low production efficiency
[0006] Therefore, how to obtain a graphite deposition device for a chemical vapor deposition furnace, which can overcome the defect of uneven product thickness in the deposition chamber in large-scale industrial production, has always been one of the focuses of common attention of manufacturers and users in the industry.

Method used

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  • Graphite depositing device for chemical vapor deposition furnace
  • Graphite depositing device for chemical vapor deposition furnace
  • Graphite depositing device for chemical vapor deposition furnace

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0063] First, put solid raw materials into the graphite crucible of the solid raw material holding device, cover the crucible cover on the top, and confirm that the air flow holes on the top of the crucible cover are in good condition.

[0064] Then set the temperature rise and deposition program of the chemical vapor deposition furnace. During the deposition process, the solid raw material vapor and gas raw material are carried by the inert gas and enter the first deposition chamber through the pores. After the deposition part of the bottom cover plate of the first deposition chamber, Then enter the second deposition chamber for deposition through the gas flow holes on the partition (staggered with the gas flow holes on the cover plate), after the bottom partition plate deposition part of the second deposition chamber, finally pass through the gas flow holes on the partition (the second deposition chamber) The bottom partitions of the second deposition chamber and the gas flow...

Embodiment 2

[0067] Put the zinc raw material into the graphite crucible, set the temperature rise and deposition program, during the deposition process, hydrogen selenide and zinc vapor enter the deposition chamber under the inert gas, first enter the first deposition chamber, and deposit part in the first deposition chamber , and then enter the second deposition chamber for deposition through the gas distribution plate, after the deposition part of the partition at the bottom of the second deposition chamber, enter the third deposition chamber through the gas flow holes on the partition, and deposit in the third deposition chamber. The bottom partition of the third deposition chamber. Finally, the unreacted gas and undeposited zinc selenide dust enter the dust collection room for deposition, and then enter the back-end dust multi-stage collection system and tail gas treatment system after passing through the dust guide channel into the chemical deposition process.

[0068] see figure 2...

Embodiment 3

[0072] Put the zinc raw material into the graphite crucible, set the temperature rise and deposition program, during the deposition process, hydrogen sulfide and zinc vapor enter the deposition chamber under the inert gas, first enter the first deposition chamber, and deposit part in the first deposition chamber, Then enter the second deposition chamber for deposition through the gas distribution plate, and finally the unreacted gas and undeposited zinc sulfide dust enter the dust collection chamber for deposition, and enter the back-end dust multi-stage collection system after entering the chemical deposition process through the dust guide channel and exhaust treatment systems.

[0073] see image 3 , image 3 A schematic structural diagram of a graphite deposition device for a chemical vapor deposition furnace provided in Example 3 of the present invention, wherein 1 is a crucible, 2 is a crucible cover, 3 is a first deposition chamber, 4 is a partition, and 5 is a second ...

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PUM

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Abstract

The invention provides a graphite depositing device for a chemical vapor deposition furnace. The device comprises a solid raw material containing device, a cover plate, a depositing mechanism with at least two longitudinally-arranged depositing chambers, and a dust collecting chamber located above the depositing chambers. The cover plate is arranged at the top of the solid raw material containing device. Airflow holes are formed in the cover plate. The depositing mechanism is arranged at the top of the cover plate. The cover plate serves as a bottom plate of the depositing mechanism. A separation plate is arranged between the depositing chambers. Airflow holes are formed in the separation plate. The bottom of the dust collecting chamber is communicated with the uppermost depositing chamber through a dust collecting channel. The separation plate is additionally arranged between the depositing chambers, the whole chambers are divided, the thickness of products deposited in the different chambers is more even and gradient, the conversion rate of the products is increased, subsequent processing efficiency is greatly improved, processing difficulty is lowered, the overall utilization rate of the products is increased, and the problem that the thickness of a large-size depositing chamber is uneven in the depositing process is effectively solved.

Description

technical field [0001] The invention relates to the technical field of chemical vapor deposition, in particular to a graphite deposition device for a chemical vapor deposition furnace. Background technique [0002] Modern science and technology need to use a large number of new inorganic materials with different functions. These functional materials must be high-purity, or doped materials formed by intentionally doping some impurities in high-purity materials. Chemical vapor deposition is a new technique for preparing inorganic materials developed in recent decades. Chemical vapor deposition has been widely used to purify substances, develop new crystals, and deposit various single crystal, polycrystalline or glassy inorganic thin film materials. [0003] The chemical vapor deposition method is a vapor phase growth method for preparing materials. It is to pass one or several compounds containing thin film elements and elemental gas into the reaction chamber where the substr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/44C23C16/30
CPCC23C16/306C23C16/44
Inventor 朱刘于金凤刘留
Owner 安徽光智科技有限公司
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