A chip and method of making the same

Abstract

The invention discloses a chip and a manufacturing method thereof. Through polishing of a first SiO2 layer, the first SiO2 layer is more flat and compact relative to the conventional SiO2 layer which is tightly attached to top layer metal; high-energy ions are injected to the polished first SiO2 layer to generate a dielectric layer, the injected high-energy ions allows the generated dielectric layer to be more compact and allows local stress generated by the first SiO2 layer which is tightly attached to the top layer metal, to be reduced, and the injected high-energy ions fixes mobile ionic charges in the dielectric layer and reduces the interface states of the dielectric layer and the polished first SiO2 layer; and a second SiO2 layer grows on a surface of the dielectric layer, an SiN layer is generated on a surface of the second SiO2 layer, and a polymer layer is generated on a surface of the SiN layer. The problem in the prior art that the reliability of devices can be affected by high mechanical stress generated by the conventional passivation layer and large local stress generated by the conventional passivation layer which is tightly attached to the top layer metal, can be solved.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a chip and a manufacturing method thereof. Background technique [0002] In the manufacturing process of integrated circuits, some mobile ionic charges will inevitably be mixed in. Mobile ionic charges are a kind of impurity pollution widely present in chips, and their main components are alkali metal ions, such as Na ions and K ions. This kind of mobile ions will move freely in the oxide layer under the action of electric field, mechanical stress, and temperature, and eventually cause device parameter drift, such as the threshold voltage of MOS devices, the breakdown voltage of high-voltage devices, etc. [0003] In the semiconductor manufacturing process, after the device layer and metal wires are formed on the semiconductor substrate, in order to prevent the metal wires from being polluted and damaged by water vapor in the external environment, mobile ion charges, etc., us...

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Problems solved by technology

[0006] The invention provides a chip and its manufacturing method, which are used to solve the problem of mobile ions caused by the high mechanical stress of the traditional passivation layer and the large local stress close to the top metal in the prior art. Problems where charge buildup forms undesired interface states that affect device parameters and reliability

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