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Micro-nano pyramidal silicon/ingan hybrid pn junction solar cell and its preparation method

A technology of micro-nano pyramids and solar cells, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of reducing photogenerated current, reducing open circuit voltage, and increasing series resistance of devices, so as to enhance light absorption capacity, improve efficiency, and solve current problems. The effect of transmission

Active Publication Date: 2017-06-16
JIANGSU INST OF ADVANCED SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the cathode and anode are on the same side, the photo-generated carriers must flow through the n-GaN layer laterally, which will increase the probability of photo-generated carriers being captured by the defect center, reduce the photo-generated current, and also increase the series resistance of the device and reduce the open circuit. Voltage

Method used

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  • Micro-nano pyramidal silicon/ingan hybrid pn junction solar cell and its preparation method
  • Micro-nano pyramidal silicon/ingan hybrid pn junction solar cell and its preparation method
  • Micro-nano pyramidal silicon/ingan hybrid pn junction solar cell and its preparation method

Examples

Experimental program
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Effect test

Embodiment 1

[0029]A p-electrode layer 1, the p-electrode layer is an Au material, which is manufactured on the opposite side of the p-Si layer by thermal evaporation coating; it grows in a low vacuum (10E5~10E2Pa) environment, and the growth temperature is controlled at 2000°C, the growth time is 30min, and the thickness is 80nm.

[0030] A p-type Si layer 2, the p-Si layer is made on the P electrode layer 1, and the p-Si is single-sided polished, the crystal orientation is (100), and its size is 10.0mm×10.5mm (±0.2mm) , the thickness is 520±10um, the crystal orientation is ±0.5, and the resistivity is 0.1Ω·cm. Its surface is corroded by KOH alkaline mixed solution for 20 minutes at room temperature to form a micro-nano pyramid structure, and the depth of the pyramid is 4um. as follows figure 1 Shown is a p-type Si layer with a micro-nano pyramid structure 201 grown on the P-electrode layer. The KOH alkaline mixed solution in the example is formed by mixing KOH with a mass concentratio...

Embodiment 2

[0035] A p-electrode layer 1, the p-electrode layer is an Au material, which is manufactured on the opposite side of the p-Si layer by thermal evaporation coating; it grows in a low vacuum (10E5~10E2Pa) environment, and the growth temperature is controlled at 3000°C, the growth time is 50min, and the thickness is 100nm.

[0036] A p-type Si layer 2, the p-Si layer is made on the P electrode layer 1, and the p-Si is single-sided polished, the crystal orientation is (100), and its size is 10.0mm×10.5mm (±0.2mm) , the thickness is 520±10um, the crystal orientation is ±0.5, and the resistivity is 0.5Ω·cm. Its surface is corroded by KOH alkaline mixed solution for 20 minutes at room temperature to form a micro-nano pyramid structure, and the depth of the pyramid is 5um. as follows figure 1 Shown is a p-type Si layer with a micro-nano pyramid structure 201 grown on the P-electrode layer. The KOH alkaline mixed solution in the example is formed by mixing KOH with a mass concentrat...

Embodiment approach 2

[0041] Example 1

[0042] A P-electrode layer 1, the P-electrode layer is made of Au material, which is fabricated on the opposite side of the p-Si layer by thermal evaporation coating; it grows in a low-vacuum environment, and the growth temperature is controlled to be 2000°C, and the growth time is It is 30min-50min, and the thickness is 80nm.

[0043] A p-type Si layer 2, the p-Si layer is made on the P electrode layer 1, and the p-Si is single-sided polished, the crystal orientation is (100), and its size is 10.0mm×10.5mm (±0.2mm) , the thickness is 520±10um, the crystal orientation is ±0.5, and the resistivity is 0.1Ω·cm. Its surface forms a micro-nano pyramid structure after processes such as photolithography and reactive ion etching, and the depth of the pyramid is 4um. The operation process is first to thermally oxidize the surface of the Si wafer to form a silicon dioxide layer with a thickness of about 5um, as shown in the figure Figure 2a shown. Then the photol...

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Abstract

The invention provides a micro-nano pyramid silicon / InGaN heterozygosis pn junction solar cell and a manufacturing method thereof. The solar cell is formed by successively stacking a P electrode, p-Si, n-InGaN, and an N electrode. A vertical electrode conductance structure is adopted. A heterojunction structure adopts a p-Si / n-InGaN heterozygosis pn junction. A p-Si surface of a p-Si / n-InGaN contact interface is processed to be a micro-nano pyramid structure. By using the solar cell and the method, photoelectric conversion efficiency of an InGaN solar cell device can be greatly increased; a carrier transport and electrode absorption problem is effectively solved; simultaneously the p-Si is used to replace p-InGaN pf a high In component so that a p-type doped bottleneck problem of the InGaN is radically avoided; a micro-nano pyramid array with a controllable shape is grown on a p-Si surface so that a light adsorption capability of the solar cell is greatly increased; and the photoelectric conversion efficiency of the solar cell is effectively increased.

Description

technical field [0001] The invention relates to the field of semiconductor device technology and photoelectric devices, in particular to a micro-nano pyramidal silicon / InGaN hybrid pn junction solar cell and a manufacturing method thereof. Background technique [0002] Solar energy is a clean, non-polluting, inexhaustible new energy source that has incomparable advantages over other new energy sources. An important application of solar energy in today's world is solar cells. A solar cell is a semiconductor device that directly converts solar energy into electrical energy through the principle of photoelectric conversion. At present, silicon-based solar cells are the most mature and have the highest conversion efficiency in the world, but due to their disadvantages of high cost and short life, people have begun to pay close attention to solar cells based on III-nitride compounds. The band gap of Group III nitrides can vary continuously from 0.7eV (J.Wu et al., Appl.Phys.Let...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L31/0236H01L31/0336H01L31/18
CPCH01L31/022425H01L31/02366H01L31/0336H01L31/18Y02E10/50Y02P70/50
Inventor 尹以安刘力章勇张琪伦
Owner JIANGSU INST OF ADVANCED SEMICON CO LTD
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