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Visible light bidirectional absorber structure

An absorber and visible light technology, which is applied in the direction of microstructure technology, microstructure devices, and manufacturing microstructure devices, etc., can solve the problem that visible light absorber junctions cannot achieve perfect absorption of bidirectional incident light at the same time, and the absorption efficiency of light absorbers is inherently limited. Solve problems such as waste of light energy, achieve the effect of bidirectional visible light absorption, simple structure, and low material consumption

Active Publication Date: 2016-04-13
HUAIYIN INSTITUTE OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the visible light absorber structure proposed in the published literature and patents can only achieve perfect absorption of incident light on one side, while the incident light on the other side cannot be absorbed, resulting in inherently limited absorption efficiency of the light absorber, which is unavoidable. waste of light energy
In other words, the disclosed visible light absorber junctions cannot achieve perfect absorption of bidirectional incident light at the same time.

Method used

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  • Visible light bidirectional absorber structure
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  • Visible light bidirectional absorber structure

Examples

Experimental program
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Effect test

Embodiment 1

[0024] The manufacturing process of a visible light two-way absorber in this embodiment is as follows:

[0025] (1) Using polyethylene terephthalate as the substrate material, using the well-known technology in the field that we reported earlier - soft nanoimprint technology (Advanced Functional Materials, 25(18), 2660-2668), on the substrate The preparation material is the nanostructure unit of ultraviolet curable adhesive (such as figure 2 shown), the period of the nanostructure unit is P=180nm, and the height is H 1 =300nm, the bottom width is d=65nm;

[0026] (2) A layer of metal Au is evaporated on the above-mentioned nanostructure unit by thermal evaporation method, with a thickness (H 3 -H 2 )=20nm;

[0027] (3) Using the magnetron sputtering method to make a dielectric layer silicon nitride film (Si 3 N 4 ), thickness (H 3 -H 2 )=18nm.

[0028] Ultimately, as Figure 3a As shown, the forward average absorption rate of the obtained visible two-way absorber de...

Embodiment 2

[0030] The manufacturing process of a visible light two-way absorber in this embodiment is as follows:

[0031] (1) The preparation of the nanostructure unit is the same as step (1) in Example 1;

[0032] (2) adopt measurement and control sputtering method to make a layer of metal Ni on the above-mentioned nanostructure unit, thickness (H 3 -H 2 )=15nm;

[0033] (3) adopt magnetron sputtering method to make medium layer silicon nitride film (Si 3 N 4 ) thickness (H 3 -H 2 )=10nm.

[0034] The result is as Image 6As shown, the obtained visible two-way absorber device has a forward average absorption rate of 89.1% in the entire 300nm-800nm ​​visible light band, and a corresponding reverse average absorption rate of 67.4%.

Embodiment 3

[0036] The manufacturing process of a visible light two-way absorber in this embodiment is as follows:

[0037] (1) A single crystal silicon wafer is used as the base material, and the nanostructure unit is prepared on the single crystal silicon wafer by electron beam etching method, the period is P=120nm and the height is H 1 =250nm, the bottom width is d=60nm;

[0038] (2) A layer of metal Au is evaporated on the above-mentioned nanostructure unit by thermal evaporation method, with a thickness (H 3 -H 2 )=15nm;

[0039] (3) The dielectric layer silicon dioxide (SiO2) is made on the metal layer Au by thermal evaporation method. 2 ), thickness (H 3 -H 2 )=22nm.

[0040] Test the forward and reverse absorption rate of the prepared device, the results are as follows Figure 7 As shown, the obtained visible two-way absorber device has a forward average absorption rate of 88.1% in the entire 300nm-800nm ​​visible light band, and a corresponding reverse average absorption r...

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Abstract

The invention discloses a visible light bidirectional absorber structure. The preparation steps of the absorber structure are as follows: (1), preparing a two-dimensional nanoarray unit on base material by using a nanofabrication technology, wherein the cycle of the nanostructure unit is 100-200 nm, the ratio of the bottom width of the nanostructure unit and the cycle is less than 0.4, the ratio of the height of the nanostructure unit and the bottom width of the unit is more than 1.5; (2), evaporating or sputtering a metal layer with thickness of 5-20 nm on the two-dimensional nanostructure unit; and (3), evaporating or sputtering a media layer with thickness of 5-20 nm on the metal layer. According to the invention, the bidirectional almost perfect absorption of the visible light is realized; the structure is simple; the consumed material is little; the angle is wide; and the structure has wide application prospect in photoelectric detector and stealth camouflage fields.

Description

technical field [0001] The invention relates to an electromagnetic wave absorbing structure, in particular to a visible light bidirectional absorber structure, which can be applied to the fields of thermal photovoltaic devices, photodetectors, camouflage and stealth in the visible light region, and the like. Background technique [0002] In 2008, Landy, N.I. published a research paper in the journal "Physical review letters", proposing for the first time a perfect absorber structure with a single-wavelength absorption rate of 100%. Since then, people have been working on exploring a perfect electromagnetic absorber structure with wide band and wide angle, because this kind of broadband electromagnetic absorber has potential and huge applications in the fields of thermal photovoltaic devices, photodetectors, and stealth camouflage. potential. Especially the perfect absorber in the visible light frequency band can also be applied to thermal imaging technology, ink-free printi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B1/00B81C1/00B82Y30/00B82Y40/00G02B5/00
CPCB81B1/00B81C1/00111B82Y30/00B82Y40/00G02B5/003
Inventor 周雷高本领朱雨富范媛媛林毅张俊
Owner HUAIYIN INSTITUTE OF TECHNOLOGY
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