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Preparation method of ordered mesoporous silicon carbide

A technology of ordered mesoporous silicon carbide and silicon carbide, which is applied in the field of preparing ordered mesoporous silicon carbide by microwave roasting, can solve the problems of long time consumption and high energy consumption of mesoporous silicon carbide, so as to reduce the time-consuming and high energy consumption of mesoporous silicon carbide. The effect of product stability and shortening of preparation time

Active Publication Date: 2016-04-20
TAIYUAN UNIV OF TECH
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  • Abstract
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  • Application Information

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Problems solved by technology

[0004] The present invention provides a method for preparing ordered mesoporous silicon carbide in order to solve the problems of long time-consuming preparation of mesoporous silicon carbide and high energy consumption in the prior art.

Method used

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  • Preparation method of ordered mesoporous silicon carbide
  • Preparation method of ordered mesoporous silicon carbide
  • Preparation method of ordered mesoporous silicon carbide

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Embodiment Construction

[0023] The chemical substance material that the present invention uses is: structure directing agent F127, phenol, formaldehyde, tetraethyl orthosilicate, dehydrated alcohol, sodium hydroxide, hydrochloric acid, hydrofluoric acid, deionized water, nitrogen, and its preparation consumption is in gram, milliliter, centimeter 3 as a unit of measurement

[0024] F127: Polyoxyethylene-polyoxypropylene-polyoxyethylene 16.00g±0.01g

[0025] Phenol: C 6 h 5 OH18.30g±0.01g

[0026] Formaldehyde: HCHO28.50ml±0.01ml

[0027] Ethyl orthosilicate: Si(OC 2 h 5 ) 4 4.40ml±0.01ml

[0028] Absolute ethanol: C 2 h 5 OH180.00mL±0.01mL

[0029] Sodium hydroxide: NaOH25.065g±0.001g

[0030] Hydrochloric acid: HCl10.00mL±0.01mL

[0031] Hydrofluoric acid: HF15.00mL±0.01mL

[0032] Deionized water: H 2 O3000ml±50ml

[0033] Nitrogen: N 2 10000cm 3 ±100cm 3

[0034] The preparation method is as follows:

[0035] ⑴ Prepare the solution

[0036] ① Configure 20wt.% sodium hydroxide...

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Abstract

The invention relates to a method for preparing ordered mesoporous silicon carbide through microwave roasting. The method comprises the steps that 1, an ordered mesoporous SiO2-C composite is prepared; 2, the ordered mesoporous silicon carbide is prepared through microwave reduction. The ordered mesoporous SiO2-C composite is firstly prepared, a microwave radiation carbothermal reduction reaction is performed in an inert atmosphere through the good microwave absorbing property of carbon, and then impurity removing and drying are performed to obtain the ordered mesoporous silicon carbide. The preparation method is short in preparation time, and the product has the advantages of being relatively uniform in pore diameter and larger in specific surface area.

Description

technical field [0001] The invention relates to a method for preparing ordered mesoporous silicon carbide by microwave roasting, and belongs to the field of synthesis technology of ordered mesoporous materials. Background technique [0002] Silicon carbide has excellent characteristics such as good chemical stability, high temperature stability, high thermal conductivity, and oxidation resistance, so that silicon carbide can be used as a high-temperature structural component, a substrate for large-scale integrated circuits, and can also be used as an excellent catalyst for high-temperature reactions. Carrier, widely used in chemical industry, machinery, metallurgy and other industrial fields. The preparation of silicon carbide usually utilizes carbothermal reduction reaction, which needs to be heated to 2000°C. The prepared silicon carbide has a small specific surface area and is non-porous. This method is time-consuming and energy-consuming and urgently needs to be improved...

Claims

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Application Information

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IPC IPC(8): C01B31/36
CPCC01P2002/72C01P2004/04
Inventor 任军靳永勇孙伟史瑞娜王娟王婧郝盼盼
Owner TAIYUAN UNIV OF TECH
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