Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A transparent field-effect ultraviolet detector controlled by grid voltage and its preparation method

An ultraviolet detector and field effect technology, applied in the field of ultraviolet detectors, can solve problems such as unsatisfactory effects, and achieve the effects of bottom excitation threshold, good light transmittance and high detection efficiency

Active Publication Date: 2017-08-25
HENAN UNIVERSITY
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the intrinsic ZnO free exciton binding energy is 60meV, and its room temperature bandgap is 3.37eV, so the effect of direct application to ultraviolet detectors is not ideal.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A transparent field-effect ultraviolet detector controlled by grid voltage and its preparation method
  • A transparent field-effect ultraviolet detector controlled by grid voltage and its preparation method
  • A transparent field-effect ultraviolet detector controlled by grid voltage and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] The transparent field-effect ultraviolet detector controlled by the gate voltage of this embodiment is a bottom-gate top electrode structure, such as figure 1 , 2 shown, including:

[0056] The substrate 1 is ITO conductive glass; the upper conductive film of the ITO conductive glass is an ITO gate electrode 2;

[0057] The gate electrode insulating layer 3 is transparent ZrO 2 a film located on the ITO gate electrode 2;

[0058] The active layer 4, which is a transparent InZnO film, is located on the gate electrode insulating layer 3;

[0059] The source electrode 5 and the drain electrode 6 are both transparent InZnO films, and are respectively connected to the active layer 4 .

[0060] Wherein, the transparent InZnO film is an indium oxide-doped zinc oxide transparent conductive oxide film; in the transparent InZnO film, the mass percentage of indium oxide is 5%, and the balance is zinc oxide.

[0061] The thickness of the insulating layer of the gate electrode ...

Embodiment 2

[0076] The grid-voltage-controlled transparent field-effect ultraviolet detector of this embodiment has a bottom-gate and top-electrode structure, and its specific structure is the same as that of Embodiment 1. Wherein, the transparent InZnO film is an indium oxide-doped zinc oxide transparent conductive oxide film; in the transparent InZnO film, the mass percentage of indium oxide is 1%, and the balance is zinc oxide.

[0077] The thickness of the insulating layer of the gate electrode is 200nm; the thickness of the active layer is 100nm; the thickness of the source electrode and the drain electrode is 200nm.

[0078] The preparation method of the grid-voltage-controlled transparent field-effect ultraviolet detector of the present embodiment comprises the following steps:

[0079] 1) Prepare the gate electrode insulating layer by sol-gel method:

[0080] 1.1 Take the ITO conductive glass as the substrate, wash it with deionized water, acetone, and alcohol in sequence, and se...

Embodiment 3

[0092] The grid-voltage-controlled transparent field-effect ultraviolet detector of this embodiment has a bottom-gate and top-electrode structure, and its specific structure is the same as that of Embodiment 1. Wherein, the transparent InZnO film is an indium oxide-doped zinc oxide transparent conductive oxide film; in the transparent InZnO film, the mass percentage of indium oxide is 10%, and the balance is zinc oxide.

[0093] The thickness of the insulating layer of the gate electrode is 250nm; the thickness of the active layer is 150nm; the thickness of the source electrode and the drain electrode is 250nm.

[0094] The preparation method of the grid-voltage-controlled transparent field-effect ultraviolet detector of the present embodiment comprises the following steps:

[0095] 1) Prepare the gate electrode insulating layer by sol-gel method:

[0096] 1.1 Take the ITO conductive glass as the substrate, wash it with deionized water, acetone, and alcohol in sequence, and s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a gate voltage controlled transparent field effect ultraviolet detector and a preparation method thereof. The ultraviolet detector comprises a substrate, a gate electrode insulating layer, an active layer, a source electrode and a drain electrode, wherein the substrate is a piece of ITO conductive glass, an upper ITO conductive film on the ITO conductive glass is an ITO gate electrode, the gate electrode insulating layer is a ZrO2 film and is disposed on the ITO gate electrode, the active layer is an InZnO film and is disposed on the gate electrode insulating layer, and the source electrode and the drain electrode are InZnO films and are connected with the active layer. The ultraviolet detector is an all-transparent device, and is of good transparency. The working state of the device is adjusted by controlling the size of gate voltage. The all-transparent ultraviolet detector is integrated with the amplification gain characteristic of transistors, and is prepared through a planar preparation technology. The ultraviolet detector has the advantages of simple structure, fast response, wide working frequency band and the like. A high-speed and large-gain ultraviolet detection device can be obtained. The ultraviolet detector has a broad application prospect in the fields of communication and detection.

Description

technical field [0001] The invention belongs to the technical field of ultraviolet detectors, in particular to a grid voltage-controlled transparent field-effect ultraviolet detector, and also relates to a preparation method of the grid voltage-controlled transparent field-effect ultraviolet detector. Background technique [0002] Ultraviolet detection technology is widely used in civil and military fields such as medical diagnosis, environmental monitoring, offshore oil monitoring, astronomy, missile early warning, aircraft guidance, secret communication, and biochemical weapon detection. At present, ultraviolet detectors mainly include ultraviolet vacuum diodes, ultraviolet photomultiplier tubes, solid-state ultraviolet detectors, etc. The common traditional ultraviolet detectors are ultraviolet photomultiplier tubes and silicon-based ultraviolet photodiodes. Low efficiency, fragile and high cost; the latter needs to be accompanied by expensive filters to reduce the impact...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/113H01L31/18H01L31/032
CPCH01L31/032H01L31/1136H01L31/1832Y02P70/50
Inventor 张新安赵俊威李爽张伟风
Owner HENAN UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com