Boron removal method and device through activated slag agent

A technology of slag agent and lifting device, which is applied in the direction of chemical instruments and methods, inorganic chemistry, silicon compounds, etc., can solve the problems of difficult degradation of waste slag, pollution of surrounding soil and water sources, and unfriendly environment, so as to reduce waste slag discharge and meet industrialization requirements. Production needs, the effect of improving the removal effect

Active Publication Date: 2016-05-04
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Excessive slag agent will increase the amount of waste slag, and the waste slag is difficult to degrade in the nat

Method used

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  • Boron removal method and device through activated slag agent
  • Boron removal method and device through activated slag agent

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0039] Example 1

[0040] 1) Weigh 100kg of industrial silicon; the boron concentration is about 22ppmw;

[0041] 2) Weigh CaO and SiO according to the mass ratio of 1:3:1 2 , CaCl 2 , with a total mass of 20kg;

[0042] 3) Put the industrial silicon into the graphite crucible, evacuate, when the vacuum reaches 600Pa, turn on the induction power supply to heat, the temperature rises to 1500°C, heat for 30min, and the silicon block melts;

[0043] 4) Pass in inert gas, increase the temperature to 1600°C, add slag agent, start the vertical elevator to lower the agitator, and ventilate while stirring;

[0044] 5) After 45 minutes, stop stirring and ventilating, open the feed port, and put in 4kg of CaCl 2 , close the feed port, vacuumize, and when the vacuum reaches 600Pa, continue to stir and ventilate;

[0045] 6) The stirring rate in the whole process is 150r / min, and the ventilation rate is 35L / min during stirring;

[0046] 7) After 45 minutes, stop stirring and ventila...

Example Embodiment

[0047] Example 2

[0048] 1) Weigh 100kg of industrial silicon; the boron concentration is about 22ppmw;

[0049] 2) Weigh CaO and SiO according to the mass ratio of 1:3:1 2 , CaCl 2 , with a total mass of 20kg;

[0050] 3) Put the industrial silicon into the graphite crucible, evacuate, when the vacuum reaches 600Pa, turn on the induction power supply to heat, the temperature rises to 1500°C, heat for 30min, and the silicon block melts;

[0051] 4) Pass in inert gas, increase the temperature to 1700°C, add slag agent, start the vertical elevator to lower the agitator, and ventilate while stirring;

[0052] 5) After 45 minutes, stop stirring and ventilating, open the feed inlet, and put in the active ingredient for the first time, and put in 8kg of CaCl 2 , close the feed port, vacuumize, and when the vacuum reaches 600Pa, continue to stir and ventilate, and ensure that the temperature is above 1600°C during the whole process;

[0053] 6) The stirring rate in the whole pr...

Example Embodiment

[0055] Example 3

[0056] 1) Weigh 100kg of industrial silicon; the boron concentration is about 22ppmw;

[0057] 2) Weigh CaO and SiO according to the mass ratio of 1:3:1 2 , CaCl 2 , with a total mass of 20kg;

[0058] 3) Put the industrial silicon into the graphite crucible, evacuate, when the vacuum reaches 600Pa, turn on the induction power supply to heat, the temperature rises to 1500°C, heat for 30min, and the silicon block melts;

[0059] 4) Pass in inert gas, increase the temperature to 1600°C, add slag agent, start the vertical elevator to lower the agitator, and ventilate while stirring;

[0060] 5) Stop stirring and ventilating after 45min, open the feed inlet, put in the active ingredient for the first time, and put in 4kg of CaCl 2 , close the feed port, vacuumize, and when the vacuum reaches 600Pa, continue to stir and ventilate, and ensure that the temperature is above 1600°C during the whole process;

[0061] 6) After 45 minutes, stop stirring and ventila...

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Abstract

The invention discloses a boron removal method and device through an activated slag agent, and belongs to the fields of semiconductor materials and metallurgy. The device is provided with a lobe pump, a furnace base, a medium-frequency induction coil, an insulating layer, a graphite crucible, a stirrer and a lifting device. The method comprises the steps that raw silicon is put into the graphite crucible from a feed port, the lobe pump is started to perform vacuumizing, a medium-frequency induction power supply is started to perform heating, and when the temperature is increased to 1500 DEG C, silicon blocks are completely molten; inert gas is charged into a furnace cavity to enable the temperature to be kept at 1550 DEG C-1650 DEG C, the slag agent is added, the stirrer is started, and first-time slagging is completed; the power of the medium-frequency induction power supply is increased to enable the temperature in the furnace cavity to reach 1700 DEG C-1800 DEG C, the feed port is opened, active components of the slag agent are put into the furnace cavity for the first time, vacuumizing is performed, the stirrer is started, the inert gas is introduced, and second-time slagging is completed; after slagging is completed, silicon liquid is poured into a receiving crucible, standing and cooling are performed, a silicon ingot is taken out, purified low-boron high-purity silicon is obtained, and then boron removal achieved through the activated slag agent is completed.

Description

technical field [0001] The invention belongs to the field of semiconductor materials and metallurgy, and in particular relates to a method and a device for removing boron by an activated slag agent. Background technique [0002] With the continuous rise of fossil fuel prices and the increasingly serious environmental pollution problems, the development of clean energy has become one of the focuses of people's attention. Among them, solar energy is an important, new and effective renewable clean energy with huge reserves, no environmental pollution, and full of attractive prospects. Crystalline silicon is the main material in the solar cell industry. Compared with monocrystalline silicon, polycrystalline silicon has a lower cost and accounts for the largest proportion. People learn from the traditional metallurgical method and explore the preparation method of physical metallurgical method to purify solar grade polysilicon. [0003] According to the actual conversion effect...

Claims

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Application Information

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IPC IPC(8): C01B33/037
CPCC01B33/037C01P2006/80
Inventor 罗学涛唐天宇熊华平甘传海赖惠先黄柳青
Owner XIAMEN UNIV
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