The invention discloses a boron removal method and device through an activated slag agent, and belongs to the fields of semiconductor materials and metallurgy. The device is provided with a lobe pump, a furnace base, a medium-frequency induction coil, an insulating layer, a graphite crucible, a stirrer and a lifting device. The method comprises the steps that raw silicon is put into the graphite crucible from a feed port, the lobe pump is started to perform vacuumizing, a medium-frequency induction power supply is started to perform heating, and when the temperature is increased to 1500 DEG C, silicon blocks are completely molten; inert gas is charged into a furnace cavity to enable the temperature to be kept at 1550 DEG C-1650 DEG C, the slag agent is added, the stirrer is started, and first-time slagging is completed; the power of the medium-frequency induction power supply is increased to enable the temperature in the furnace cavity to reach 1700 DEG C-1800 DEG C, the feed port is opened, active components of the slag agent are put into the furnace cavity for the first time, vacuumizing is performed, the stirrer is started, the inert gas is introduced, and second-time slagging is completed; after slagging is completed, silicon liquid is poured into a receiving crucible, standing and cooling are performed, a silicon ingot is taken out, purified low-boron high-purity silicon is obtained, and then boron removal achieved through the activated slag agent is completed.