Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Acetone sensor based on NiO/ZnO heterostructure nanoflower sensitive material and preparation method of acetone sensor

A technology of sensitive materials and heterostructures, applied in the fields of nanotechnology, material resistance, nanotechnology for materials and surface science, can solve the problems of high detection temperature, low sensitivity, etc. Simple craftsmanship

Inactive Publication Date: 2016-05-04
JILIN UNIV
View PDF4 Cites 20 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, although many ZnO materials with different morphologies, large specific surface areas, and active site densities have been developed, most of the ZnO materials show low sensitivity and low high detection temperature

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Acetone sensor based on NiO/ZnO heterostructure nanoflower sensitive material and preparation method of acetone sensor
  • Acetone sensor based on NiO/ZnO heterostructure nanoflower sensitive material and preparation method of acetone sensor
  • Acetone sensor based on NiO/ZnO heterostructure nanoflower sensitive material and preparation method of acetone sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Using NiO / ZnO heterostructure nanoflowers as sensitive materials to make acetone sensors, the specific manufacturing process:

[0042] 1. First, 1.0g of Zn(CH 3 COO) 2 2H 2 Dissolve O in 100mL of deionized water, and keep stirring until it is completely dissolved; then slowly add 3.4mL of ammonia water to it until the solution is clear;

[0043] 2. Transfer the above solution to a constant temperature water bath, keep it at 80°C for 60 minutes, take it out, cool it down to room temperature naturally, wash the resulting precipitate with deionized water and ethanol for several times, and then dry it at room temperature before putting it in Calcined at 450°C for 1.5 hours to obtain ZnO nanoflowers assembled from ZnO nanoparticles;

[0044] 3. Take 35 mg of the above-mentioned ZnO nanoflower powder and add it to 6 mL of ethanol, and ultrasonically stir for 20 minutes to completely disperse the ZnO nanoflower powder in the ethanol. Then add 10.0mgNi(NO3)2·6H2O, and stir ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
Login to View More

Abstract

The invention provides an acetone sensor based on a NiO / ZnO heterostructure nanoflower sensitive material and a preparation method of the acetone sensor, and belongs to the technical field of semiconductor oxide gas sensors. The NiO / ZnO heterostructure nanoflower sensitive material which is used is a NiO-ZnO heterostructure nanoflower sensitive material prepared through a water-bath method and a dipping method. The sensitivity of the sensor to acetone is effectively improved through the catalysis effect of NiO nanoparticles on organic gas and the heterostructure of NiO and ZnO. In addition, The sensor is structurally composed of an Al2O3 insulating ceramic pipe which is sold on the market and comprising two annular cold electrodes, a semiconductor sensitive material with which the annular gold electrodes and the Al2O3 insulating ceramic pipe are coated, and a nichrome alloy heating coil penetrating through the Al2O3 insulating ceramic pipe. The device is simple in process, small in size and suitable for mass production, and therefore the acetone sensor has wide application prospects on the aspect of the acetone content in detection microenvironments.

Description

technical field [0001] The invention belongs to the technical field of semiconductor oxide gas sensors, and in particular relates to an acetone gas sensor based on a NiO / ZnO heterostructure nanoflower sensitive material and a preparation method thereof. Background technique [0002] In industry, acetone can not only be used as an important solvent for the production of explosives, plastics, and rubber, but also an important raw material for the synthesis of ketene, iodoform, epoxy resin and other substances. However, similar to other organic solvents, it is flammable and volatile, and it is easy to burn and explode when exposed to open flames or high heat. Moreover, acetone not only has a greater fire hazard, but also has an anesthetic effect on the human central nervous system, and even causes coma and death in high concentrations. Therefore, the detection of acetone gas is of great significance. [0003] Among the many kinds of gas sensors, the resistive gas sensor with ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12B82Y30/00B82Y40/00
CPCG01N27/127B82Y30/00B82Y40/00
Inventor 卢革宇刘畅孙鹏刘凤敏梁喜双马健孙彦峰高原
Owner JILIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com