Tantalum sputtering target and production method therefor
A manufacturing method and sputtering target technology, which can be used in manufacturing tools, sputtering coating, semiconductor/solid-state device manufacturing, etc., can solve the problems of unstable film-forming characteristics, longer burn-in time, and disordered film-forming speed. Achieve the effect of shortening the burn-in time, suppressing the formation of oxide film, and stabilizing the film formation speed
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Embodiment 1
[0076] In Example 1, for the obtained target material, a roll with a roll diameter of 400 mm was used, the rolling speed was set to be 10 m / min, the reduction rate was 86%, and the maximum reduction rate in one pass was 10%, and cold rolling was carried out. , so as to make a thickness of 14mm and a diameter of 520mmφ, and heat-treat it at a temperature of 1000°C. Then, the surface is cut and polished to form a target.
[0077] Through the above steps, a tantalum sputtering target having a crystal structure in which the orientation rate of the (100) plane was 30% and the orientation rate of the (111) plane was 50% was obtained. Sputtering was performed using this sputtering target.
[0078] Next, when the thickness of the etched deepest part of the target reached about 8 mm, sputtering was temporarily stopped, and nitrogen gas was introduced into the sputtering apparatus (vacuum container) for 60 seconds. Thus, a thickness of about nitride film.
[0079] Next, the sputter...
Embodiment 2
[0089] In Example 2, for the obtained target material, a roll with a roll diameter of 400 mm was used, the rolling speed was set to 8 m / min, the reduction rate was 88%, and the maximum reduction rate in one pass was 10%, and cold rolling was carried out. , so as to make a thickness of 14mm and a diameter of 520mmφ, and heat-treat it at a temperature of 900°C. Then, the surface is cut and polished to form a target.
[0090] Through the above steps, a tantalum sputtering target having a crystal structure in which the orientation rate of the (100) plane was 50% and the orientation rate of the (111) plane was 20% was obtained. Sputtering was performed using this sputtering target.
[0091] Next, when the thickness of the etched deepest part of the target reached about 8 mm, sputtering was temporarily stopped, and nitrogen gas was introduced into the sputtering apparatus (vacuum container) for 60 seconds. Thus, a thickness of about nitride film.
[0092] Next, the sputtering a...
Embodiment 3
[0094] In Example 3, for the obtained target material, a roll with a roll diameter of 400 mm was used, the rolling speed was set to 5 m / min, the reduction rate was 85%, and the maximum reduction rate in one pass was 10%, and cold rolling was carried out. , so as to make a thickness of 14mm and a diameter of 520mmφ, and heat-treat it at a temperature of 1100°C. Then, the surface is cut and polished to form a target.
[0095] Through the above steps, a tantalum sputtering target having a crystal structure in which the orientation rate of the (100) plane was 70% and the orientation rate of the (111) plane was 15% was obtained. Sputtering was performed using this sputtering target.
[0096] Next, when the thickness of the etched deepest part of the target reached about 8 mm, sputtering was temporarily stopped, and nitrogen gas was introduced into the sputtering apparatus (vacuum container) for 60 seconds. Thus, a thickness of about nitride film.
[0097] Next, the sputtering ...
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Abstract
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