Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation of flexible photonic crystal material with infrared stealth capacity

A technology of photonic crystals and stealth materials, applied in optics, optical components, instruments, etc., can solve problems such as poor mechanical strength, inflexibility, and restrictions on photonic crystals, and achieve the effect of solving practical problems and flexible and convenient use

Inactive Publication Date: 2016-05-18
BEIJING INSTITUTE OF TECHNOLOGYGY
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to some problems in the application of photonic crystal materials used in the field of infrared stealth, especially the photonic crystal materials prepared by colloidal self-assembly, their defects such as poor mechanical strength and inflexibility limit the practical application of photonic crystal infrared stealth materials. process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation of flexible photonic crystal material with infrared stealth capacity
  • Preparation of flexible photonic crystal material with infrared stealth capacity

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0013] Example 1 0.5μm monodisperse SiO 2 Microspheres, dispersed in ethanol, controlled SiO 2 The concentration of the microspheres was 1 mg / ml, and they were assembled by the vertical deposition method at room temperature for 2 days to obtain SiO 2 Photonic crystal film. Take 0.5 mL of methacrylic acid, 50 μL of ethylene glycol dimethacrylate (EGDMA) and 1 mL of methanol and mix well, add 10 mg of azobisisoheptanonitrile (ADVN) as a photoinitiator, sonicate for 10 minutes and blow nitrogen for 5 minutes. Clamp the prepared silica photonic crystal template with the plexiglass plate, and immerse it in the above-mentioned pre-polymerization solution. The pre-polymerization solution will absorb the colloidal crystal template through capillary action until the template becomes transparent, and then place it in an ultraviolet incubator for 4 °C for 2 hours to obtain a flexible photonic crystal gel material.

example 2

[0014] Example 2 1.5μm monodisperse SiO 2 Microspheres, dispersed in ethanol, controlled SiO 2 The concentration of microspheres was 1 mg / ml, and assembled by vertical deposition method at 60 °C and relative humidity of 50% for 6 h to obtain SiO 2 Photonic crystal film. SiO 2 Cover a glass slide above the photonic crystal film, drop a cellulose solution of appropriate concentration on the edge of the photonic crystal film, make the solution cover the entire photonic crystal film through the siphon diffusion of the solution, then remove the cover glass, and pour the The photonic crystal film of the cellulose solution was placed in a biological incubator at 60° C. for 1.5 hours to cure. The photonic crystal cellulose film was carefully removed from the glass slide to obtain a flexible photonic crystal material.

example 3

[0015] Example 3 3.0 μm monodisperse SiO 2 Microspheres, dispersed in dibromoethane-ethanol mixed solution, the volume ratio of dibromoethane to ethanol is 3:1, control SiO 2 The concentration of microspheres was 1 mg / ml, and assembled by vertical deposition method at 60 °C and relative humidity of 50% for 6 h to obtain SiO 2 Photonic crystal film. SiO will be obtained 2 The photonic crystal film was annealed in a tube furnace at 900 °C for 10 h to obtain SiO with enhanced mechanical strength 2 Photonic crystal materials. Finally, tape was carefully spread on the photonic crystal film, and after 10 minutes, the tape was carefully torn off to obtain a flexible photonic crystal material fixed by tape.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a preparation of a flexible photonic crystal material capable of realizing stealth in infrared bands. Flexibility or extensibility of a photonic crystal array with high reflectivity in the infrared bands is realized in means such as cellulose, gel, an adhesive tape and the like, so that the material is endowed with a flexible and convenient use mode while the optical stealth performance of the photonic crystal is realized, and the problem about practicability of application of the photonic crystal material to the field of infrared stealth is solved.

Description

technical field [0001] Invented a photonic crystal material that can realize stealth in the infrared band and is flexible. The photonic crystal array with high reflectivity in the infrared band is flexible or extensible by means of cellulose, gel, tape, etc., so as to achieve photonic crystal In addition to the optical stealth performance, the material is given flexible and convenient use methods, which solves the practical problem of photonic crystal materials used in the field of infrared stealth. Background technique [0002] Photonic crystal is a kind of metamaterial, which refers to a special material whose dielectric constant (or refractive index) is periodically distributed in space and has a photonic band gap. In the photon gap, the photon density of states disappears, preventing electromagnetic waves from propagating. Photonic crystals can achieve high reflection of incident electromagnetic waves within the forbidden band, change the infrared emission characteristi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C08F222/14C08F220/06C08F2/48C08J3/24C08L1/02G02B1/00
CPCC08F2/48C08F222/14C08F222/145C08J3/24C08J2301/02G02B1/005C08F220/06
Inventor 张连超邱丽莉孟子晖芦薇
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products