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A kind of preparation method of cacu3ti4o12 film

A thin film and substrate technology, applied in the field of preparing low dielectric loss CaCu3Ti4O12 thin film, can solve the problems that affect the repeatability of experiments and require high process controllability, and achieve the advantages of large-scale batch production, low cost and simple method Effect

Active Publication Date: 2018-07-27
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Doping modification requires high process controllability, and a slight change in process conditions may affect the repeatability of the experiment

Method used

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  • A kind of preparation method of cacu3ti4o12 film
  • A kind of preparation method of cacu3ti4o12 film
  • A kind of preparation method of cacu3ti4o12 film

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preparation example Construction

[0023] A kind of CaCu 3 Ti 4 O 12 The film preparation method includes the following steps:

[0024] Step 1. Prepare CaCu by polymer assisted deposition method 3 Ti 4 O 12 Precursor solution: Mix the mixed solution containing calcium salt, copper salt and titanium salt with water-soluble polymer to obtain calcium-containing complex mixture, copper-containing complex mixture, and titanium-containing complex mixture. Then, the molar ratio of calcium-containing complex, copper-containing complex, and titanium-containing complex is uniformly mixed at a ratio of 1:3:4 to prepare a calcium-copper-titanium-containing mixed solution as the preparation CaCu 3 Ti 4 O 12 Film precursor;

[0025] Step 2, LaAlO 3 Heat treatment of beveled substrate: LaAlO 3 Put the chamfered substrate into a tube furnace, raise the temperature to 800-1000°C and keep it for 1 to 6 hours, and then cool down to room temperature with the furnace to obtain a substrate with a stepped surface;

[0026] Step 3. Use a spi...

Embodiment 1

[0032] A kind of CaCu 3 Ti 4 O 12 The film preparation method includes the following steps:

[0033] Step 1. Prepare the precursor solution containing calcium, copper and titanium, the specific process is:

[0034] (1) At room temperature, add 1.68g calcium nitrate to 40mL deionized water, stir and mix well, then add 3.0g ethylenediaminetetraacetic acid and 3g water-soluble polymer PEI (polyethyleneimine), stir and ultrasonic until the solution is uniform , To obtain mixed solution A; using the Amicon 8050 ultrafiltration device produced by Millipore, USA, filter out the free ions in the mixed solution A, and evaporate and concentrate to obtain a calcium-containing mixed solution with a concentration of 291.6 mmol / L;

[0035] (2) At room temperature, add 1.93g copper nitrate to 40mL deionized water, stir and mix well, then add 3.0g ethylenediaminetetraacetic acid and 3g water-soluble polymer PEI (polyethyleneimine), stir and ultrasonic until the solution is uniform , To obtain mixed...

Embodiment 2

[0042] The difference between this embodiment and embodiment 1 is: LaAlO used in step 2 3 (001) The bevel angle of the substrate is 2.5°, and the remaining steps are the same as in Example 1.

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Abstract

A method for preparing a CaCu3Ti4O12 thin film belongs to the technical field of functional materials. The method comprises the following steps: 1) preparing a precursor solution containing calcium copper titanium by polymer-assisted deposition; 2) heat-treating the chamfered LaAlO3 substrate at 800-1000° C. for 1-6 hours to obtain a substrate with a stepped structure on the surface ; 3) using the spin coating method to uniformly coat the precursor solution on the surface of the substrate after step 2), drying, to obtain a film sample containing calcium copper titanium; 4) to the film sample containing calcium copper titanium obtained in the previous step Heat treatment, cooling to room temperature with the furnace, to obtain CaCu3Ti4O12 film. The present invention regulates the stress of the CCTO thin film by means of the oblique cut substrates with different oblique cutting angles, so that the dielectric loss of the prepared thin film is significantly reduced; and the method is simple, the cost is low, and the process has good controllability and repeatability, which is beneficial to Mass production.

Description

Technical field [0001] The invention belongs to the technical field of functional materials, and specifically relates to a method of regulating LaAlO 3 Bevel the substrate stress to prepare CaCu with low dielectric loss 3 Ti 4 O 12 Thin film method. Background technique [0002] The development and research of high dielectric constant materials (ε﹥1000) is of great significance to the realization of the application of large-capacity capacitors and the miniaturization and miniaturization of electronic components. So far, some high dielectric constant materials have been used in actual devices. CaCu was discovered in 2000 3 Ti 4 O 12 (CCTO) The dielectric constant of the material can reach 12000 under the action of 1kHz AC electric field, and the dielectric constant remains basically unchanged in a certain temperature (100K~600K) and frequency domain (0Hz~1MHz). Once the high dielectric properties of CCTO were discovered, it immediately attracted widespread attention. However, CCT...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C18/12
CPCC23C18/1216C23C18/1245C23C18/1295
Inventor 林媛姚光高敏
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA