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A semiconductor wafer electroplating clamping device, clamping method and electroplating process thereof

A clamping device and semiconductor technology, applied in the direction of electrophoretic plating, electrolytic coating, electrolytic process, etc., can solve the problems of semiconductor wafer scrapping, double-sided conduction, affecting the quality of electroplating, etc., to reduce the cost of metal deposition and prevent direct contact , Guarantee the effect of electroplating quality

Inactive Publication Date: 2018-09-11
武汉华晶微联科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This electroplating clamping device in the prior art has the following defects in use: (1), in order to ensure the uniformity of the plated deposition thickness of the chip pad, the electroplating solution needs to be fully stirred and flowed during the electroplating process, but the flow of the electroplating solution has a great impact on The semiconductor wafer causes a certain momentum. In order to maintain the stability of the semiconductor wafer in the flowing liquid, the alligator clip 103 needs to clamp the semiconductor wafer with a certain pressing force. If the pressing force of the alligator clip 103 is too small, it will be easy to Cause wafer to fall off; Otherwise if the pressing force of crocodile clip 103 is too big, then easily make thin semiconductor wafer split, simultaneously the tooth of crocodile clip penetrates the photoresist 102 of semiconductor wafer surface very easily, can cause The semiconductor wafer conducts electricity on both sides, so that electroplating is carried out in places that should not be electroplated, which seriously affects the quality of electroplating, and may even cause the entire semiconductor wafer to be scrapped. Therefore, it is difficult to control the pressing force at an ideal level when using alligator clips to fix the semiconductor wafer. range
Secondly, in electroplating, most of the crocodile clips and plate clips are immersed in the electroplating solution, which will introduce more impurity ions, which may cause premature scrapping of the electroplating solution
Also have the clamping and fixing method that adopts crocodile clip and board clamp simultaneously to also have the defective that clamping and fixing operation is complicated, loaded down with trivial details, so in existing chip pad electroplating technology, there is bigger problem to the clamping and fixing device of semiconductor wafer defect
At the same time, in the prior art, selective deposition cannot be performed when depositing the chip pads of the semiconductor wafer, resulting in serious waste of precious metals.

Method used

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  • A semiconductor wafer electroplating clamping device, clamping method and electroplating process thereof
  • A semiconductor wafer electroplating clamping device, clamping method and electroplating process thereof
  • A semiconductor wafer electroplating clamping device, clamping method and electroplating process thereof

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specific Embodiment

[0062] Further provide the specific embodiment that adopts the method for the present invention to carry out the semiconductor wafer chip bonding pad to make below, comprise the following steps:

[0063] Step 1. Select a 2-inch indium phosphide (InP) single crystal substrate epitaxial wafer, and follow the conventional semiconductor chip manufacturing process, such as photolithography, chemical etching, deionized water or solvent cleaning, chemical vapor deposition, dry etching, Rapid annealing, etc., the basic structure of the ridge laser chip is made on the InP wafer.

[0064] Step 2. Sputter a 500Å thick Au layer on the InP wafer. In order to ensure the adhesion of the Au layer to the InP substrate, the wafer was rinsed in 20% HCl aqueous solution for 5 seconds before sputtering, then fully cleaned with plasma water, dried with N2 gas, and immediately placed in the sputtering chamber for further processing. Sputtering of Au layer.

[0065] Step 3. Select AZ5214 positive p...

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Abstract

The invention provides a semiconductor wafer electroplating clamping device, a clamping method and an electroplating process thereof. The electroplating clamping device comprises an insulation liner plate, an elastic conductive metal wire and an electrode plate, wherein an installing groove is formed in the insulation liner plate, one end of the elastic conductive metal wire is connected between the electrode plate and the insulation liner plate, the other end of the elastic conductive metal wire extends into the installing groove, and a semiconductor wafer can be elastically pressed in the installing groove. The semiconductor wafer is fixed by utilizing the insulation liner plate and the elastic conductive metal wire, semiconductor wafer shedding or crack due to the impact from electroplate liquid and contact between the back face of the wafer and the electroplate liquid are avoided, electroplated metal can selectively and only deposit on the position of a chip bonding pad, the metal deposition efficiency of the bonding pad is improved, precious metal waste is reduced, a metal stripping technology required by traditional sputtering and evaporation is omitted, the manufacturing cost is greatly reduced, and the semiconductor wafer electroplating clamping device, the clamping method and the electroplating process belong to the development trend of a next-generation laser semiconductor chips.

Description

technical field [0001] The invention relates to the technical field of semiconductor wafer electroplating, specifically designs a semiconductor wafer electroplating clamping device, a clamping method and an electroplating process thereof, and is especially suitable for the electroplating clamping and electroplating process of a laser semiconductor wafer. Background technique [0002] The laser semiconductor emits light by loading the current to the two poles of the laser diode through the metal wire bonded to the chip pad. The chip pad on the laser semiconductor wafer is usually gold (Au) or other conductive metal (such as copper-Cu, aluminum-Al) material, the thickness of the pad is between 0.2 microns and 4 microns, and the deposition method of the chip pad is usually There are plasma sputtering, evaporation and electroplating. For laser semiconductors used in high-speed optical communications, the thickness of the chip pad is required to be at least greater than 1 micron...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25D17/06C25D17/08C25D13/12C25D13/02
CPCC25D13/02C25D13/12C25D17/06C25D17/08
Inventor 肖黎明李林森鲁杰
Owner 武汉华晶微联科技有限公司