A semiconductor wafer electroplating clamping device, clamping method and electroplating process thereof
A clamping device and semiconductor technology, applied in the direction of electrophoretic plating, electrolytic coating, electrolytic process, etc., can solve the problems of semiconductor wafer scrapping, double-sided conduction, affecting the quality of electroplating, etc., to reduce the cost of metal deposition and prevent direct contact , Guarantee the effect of electroplating quality
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[0062] Further provide the specific embodiment that adopts the method for the present invention to carry out the semiconductor wafer chip bonding pad to make below, comprise the following steps:
[0063] Step 1. Select a 2-inch indium phosphide (InP) single crystal substrate epitaxial wafer, and follow the conventional semiconductor chip manufacturing process, such as photolithography, chemical etching, deionized water or solvent cleaning, chemical vapor deposition, dry etching, Rapid annealing, etc., the basic structure of the ridge laser chip is made on the InP wafer.
[0064] Step 2. Sputter a 500Å thick Au layer on the InP wafer. In order to ensure the adhesion of the Au layer to the InP substrate, the wafer was rinsed in 20% HCl aqueous solution for 5 seconds before sputtering, then fully cleaned with plasma water, dried with N2 gas, and immediately placed in the sputtering chamber for further processing. Sputtering of Au layer.
[0065] Step 3. Select AZ5214 positive p...
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