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A method for controlling the directional growth of gypsum hemihydrate single crystal

A hemihydrate gypsum, directional growth technology, applied in the field of gypsum, can solve the problems of easy volatilization, uncontrollable shape, and easy pollution to the environment

Active Publication Date: 2018-02-06
SOUTHWEAT UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This process uses acid (nitric acid or hydrochloric acid) to extract useful substances in phosphogypsum. The acid will corrode the equipment and easily volatilize, causing pollution to the environment.
[0006] The calcium sulfate whiskers prepared by He Hua and Sun Hongjuan are needle-shaped and uncontrollable in shape; the production process is easy to cause pollution to the environment

Method used

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  • A method for controlling the directional growth of gypsum hemihydrate single crystal
  • A method for controlling the directional growth of gypsum hemihydrate single crystal
  • A method for controlling the directional growth of gypsum hemihydrate single crystal

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Embodiment Construction

[0014] The present invention will be further described in detail below in conjunction with specific embodiments.

[0015] A. Raw material pretreatment:

[0016] Table 1 lists the amounts of various raw materials used in the pretreatment of the raw materials in the 13 examples numbered 1-13: According to the different examples in Table 1, determine the amount of acidity regulator (calcium oxide, calcium carbonate) and water added, and After aging for 24 hours, the phosphogypsum raw material is pretreated.

[0017] Table 1 Raw material pretreatment (unit: g)

[0018]

[0019]

[0020] B: Preparation of gypsum single crystal

[0021] The processed phosphogypsum obtained in step A is poured into a reactor with a reflux device for condensation, an impurity stabilizer, a crystal surface selective adsorbent are added, and the mixture is uniformly mixed, and then a heating reaction is performed. At the same time, an ion motion controller is added to the reaction system. After the reaction, th...

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Abstract

The invention discloses a control method for orientated growth of hemi-hydrate gypsum monocrystals. The control method comprises the following steps: adding an acidity regulating agent into phosphogypsum, adding water, uniformly mixing, aging, then loading into a reactor with a condensation refluxing device, adding an impurity stabilizer and a crystal face selective absorbent, uniformly mixing, performing the heating reaction, adding an ion movement controller into the reaction system, after the reaction is ended, cooling, filtering, and drying solids to obtain morphology-controllable hemi-hydrate gypsum monocrystals. The method has the characteristics of simple process and low cost and is suitable for industrialized production.

Description

Technical field [0001] The invention relates to gypsum, in particular to a method for preparing hemihydrate gypsum single crystals that can be used as columnar morphology in construction, plastics, rubber, and coatings. Background technique [0002] Gypsum is a sulfate mineral, and its chemical formula is CaSO4·2H2O. Gypsum can be dehydrated to form anhydrite. In nature, they are in a metastable state and can be transformed into each other under certain conditions. The main value of natural gypsum is that it is heated under different temperature conditions, and its calcined products have different characteristics. For example, when natural gypsum is heated to 65~70℃, it will begin to be dehydrated and become hemihydrate gypsum; heated to within 200℃ and gradually dehydrated, the hemihydrate gypsum part becomes anhydrous gypsum, but it will quickly condense into dihydrate gypsum in contact with water ; When heated to 200~300℃, it mainly becomes anhydrous gypsum, and the setting ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B7/14C30B29/46
CPCC30B7/14C30B29/46
Inventor 董发勤谭宏斌吴传龙何花贺小春
Owner SOUTHWEAT UNIV OF SCI & TECH
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