40results about How to "Achieve directed growth" patented technology

The invention relates to a method for preparing a nickel-based superalloy Rene80 directionally-grown column crystal/single crystal alloy and manufacturing parts, and belongs to the processing field of the laser materials. The method is carried out in atmosphere; a high-energy beam is taken as the heat source; the movement of the high-energy beam is achieved under the control of a numerical control system; the Rene80 powder flow conveyed by a carrier gas is smelted and deposited on a directionally-solidified nickel-based alloy substrate layer by layer; in this way, the nickel-based superalloy and parts having directionally-grown straight column crystal structure/single crystals and different cross-section shapes can be directly manufactured. The nickel-based alloy Rene80 directionally-grown column crystal/single crystal alloy parts manufactured by the method can be applied to manufacturing the hot end parts of naval ships, gas turbines and aero-engines.

The invention relates to a device and a method for growing cadmium zinc telluride crystals in a mobile tellurium solvent melting zone and belongs to the technical field of the growth of special crystals. The method is characterized by comprising the following steps of: feeding 99.99999 percent high-purity raw materials of which the stoichiometric proportion meets Cd1-xZnxTe (x=0.04-0.8) into two quartz tubes; adding 30 to 80 mass percent of excessive tellurium (Te) into one of the quartz tubes; vacuumizing and sealing the quartz tubes respectively and synthesizing materials in the quartz tubes to obtain polycrystalline rods and alloys rich in the Te in a rocking furnace; feeding seed crystals, the alloys rich in the Te and the polycrystalline rods into a long crystal tube, vacuumizing, sealing and placing the long crystal tube in a furnace body, wherein the alloys rich in the Te are positioned in a high-frequency induction heater at the temperature of 700 to 950 DEG C; raising the heater at a speed of 0.02 to 2mm/h and rotating the long crystal tube at the same time; and adding excessive Te in an alloy area rich in the Te to obviously reduce the melting point to ensure that the polycrystalline rods are continuously dissolved from the upper part of melt and cadmium zinc telluride single crystals are continuously precipitated from the lower part of the melt along with the rising. The method and the device for growing the cadmium zinc telluride crystals have the advantages of obviously reducing the growing temperature and the impurity concentration of the crystals.

The invention discloses a device for growing tellurium-zinc-cadmium crystals by a traveling heater method, which is provided with a high-frequency electromagnetic induction heater and upper and lower resistance heating furnaces, wherein the upper and lower resistance heating furnaces form a holding zone at an intermediate heating section of a growth furnace body; a servo rotating mechanism drives an aluminum oxide support bar to drive a quartz material pipe to rotate; a servo linear motion mechanism drives the growth furnace body to make an up-and-down motion in the vertical direction; a control system controls output power of the high-frequency electromagnetic induction heater and the upper and lower resistance heating furnaces, and also controls the servo rotating mechanism, so that the tellurium-zinc-cadmium crystal growth material is positioned at the intermediate heating section of the growth furnace body; and the control system controls the servo linear motion mechanism to ascend at uniform speed, and also controls the servo rotating mechanism, so that the quartz material pipe rotates at uniform speed. The device disclosed by the invention can lower the crystal growth temperature, and reduces the impurity contamination; and the existence of the zone melting process has a purification action on the crystals, thereby finally acquiring the high-purity tellurium-zinc-cadmium crystals which completely conform to the requirements as a detector material.

The invention discloses a fabrication method for a hydrogel/macromolecule polymer film muscular tissue support. The method comprises obtaining a three-dimensional support structure through a layer-upon-layer stacking mode; designing and fabricating a blood vessel network structure mold and a directional flow passage mold according to muscle structural characteristics; fabricating polymer directional film through an electro-spinning technology, fabricating a support single-layer plane structure, stacking other layers of supports on the three-dimensional support structure, and performing covering with the macromolecule polymer film support bonded on the outermost layer to obtain the hydrogel/macromolecule polymer film support. According to the method, the blood vessel network and the directional flow passage are fabricated on hydrogel, directional growth of cells can be achieved through the directional flow passage, nutrition and oxygen supply can be achieved through blood vessel network pipes, the polymer film covered on the periphery has a directional structure, and accordingly, directional growth of peripheral cells can be achieved, stretched film is bound and sewn, and fixation of the support is achieved.

The invention relates to a method for preparing zinc oxide nano belt material in ordered arrangement, which realizes the large area orienting growth of the zinc oxide nano belt by applying catalytic inducing technology, preparing zinc oxide nano belt material of good crystallinity in mass by controlling reacting temperature and velocity, providing a method which employs Cu, Sn, Ag, and Au and relative salt as substrate, putting the substrate into reacting furnace and by using the catalytic action of the catalyst and through the chemical vapour deposition process to realize the orienting growth of the zinc oxide nano belt on the substrate. The invention is characterized by the simple device structure, easy operation and wide usage in the field of microelectronics and photoconducting device.

The invention provides a controllable preparation method based on a covalent organic framework and an energy storage application thereof. A covalent organic framework COFs material connected with beta-ketoamide is employed as a main material, and successful introduction of an energy storage component in the COFs material and effective control of the microstructure are realized by designing a topological structure of the COFs material and selecting a polymerization monomer prepolymerization environment of the COFs material; wherein anthraquinone molecules are used as an energy storage component, so that the COFs material can show obvious electrochemical energy storage activity; meanwhile, directional growth of the COFs material in different dimensions is achieved through mechanical grindingand the double induction effect of different reaction solvents in the organic framework unit molecule prepolymerization process, and finally the covalent organic crystal material G-S-COFs energy storage material with the rod cluster-shaped microstructure is obtained. Then, through a solvent-process polymerization step, the flower-shaped covalent organic crystal material C-S-COFs composed of nanosheets can be finally prepared. The method has the advantages that on the basis that the energy storage activity of the COFs material is guaranteed, the defects that the morphology of the COFs materialis amorphous and the growth process is uncontrollable under the solvothermal condition are effectively overcome.

Belonging to the technical field of nano-material preparation, the invention relates to a preparation method of a directionally growing titanium dioxide nano-cluster array. The method is characterized by being realized through the following technical scheme of: utilizing a dual-beam or multiple-beam laser interference optical path system to perform laser interference lithography etching on a cleaned FTO conductive substrate, putting the pre-patterned FTO conductive substrate into a solution composed of deionized water, tetrabutyl titanate and concentrated sulfuric acid for hydrothermal reaction, and conducting heating by a constant temperature drying box to prepare the directionally growing titanium dioxide nano-cluster array. Through change of the parameters of laser interference lithography, the growth cycle of the titanium dioxide nano-cluster array can be adjustable from the nanoscale to the micron scale, and the diameter and length of titanium dioxide nanowires can be adjusted by changing the hydrothermal process heating time and heating temperature.

The invention discloses an orientated growth FeS nanomaterial based on carbon cloth, and a preparation method and an application of the FeS nanomaterial. The preparation method comprises the steps of:1) mixing and grinding analytically pure organic acid iron salt and urea at a mass ratio of 1:(1-7) to form a mixture A, 2) activating the carbon cloth for future use, 3) mixing the mixture A and polyacrylamide at a mass ratio of 3:1 for carbon hydrothermal reaction, 5) performing drying after the reaction is finished, and 6) loading the dried carbon cloth and excessive thiourea in a porcelain boat for high temperature calcination to form the orientated growth FeS nanomaterial based on the carbon cloth. The prepared densely growing FeS nanomaterial based on the carbon cloth integrates the advantages of high capacity, easy synthesis and low preparation cost of an iron sulfide material and strong electric conductivity, fixed and fine crystal grains, strong adsorptive capacity and the like of the carbon cloth, and has very high sodium ion storage performance, high charging and discharging capacity and good rate capability.

The invention relates to an SERS substrate as well as a preparation method and application thereof, and the preparation method comprises the following steps: scanning the surface of a first metal film in a first metal film/polymer film double-layer film by using laser, carrying out heating induction, and depositing a second metal film on the surface of the first metal film to obtain the SERS substrate. The preparation method of the SERS substrate is simple, effective and low in cost, and the obtained SERS substrate is high in wrinkle structure stability and can meet the application requirement of a wrinkle type flexible film.

The invention relates to a preparation method and an application of a polymer semiconductor film and is a substrate-based laminate instillation method for preparing the polymer semiconductor film. Themethod is characterized in that an upper substrate having a hydroxyl group attached to the surface and an OTS-modified upper substrate are included, a laminated instillation structure is designed, aand film formation is carried out by instillation under the structure to achieve preparation of large-area high-performance polymer semiconductor films. The polymer semiconductor film is grown on the substrate, on one hand, a problem of film non-uniformity caused by the coffee ring effect in a traditional instillation method is solved, on the other hand, directional guidance during film growth canbe achieved without external force, directional growth of the organic film is facilitated, the method is especially suitable for preparation of high quality polymer films, operation is simple and convenient, experimental requirements are low, and no large instruments are required.

The invention provides a crystal modifier, medical flaky alpha-hemihydrate calcium sulfate and a preparation method thereof. The preparation method of the medical flaky alpha-hemihydrate calcium sulfate comprises the following steps: step 1, respectively preparing a calcium salt solution and a sulfate solution, mixing the calcium salt solution and the sulfate solution according to the molar mass ratio of calcium salt to sulfate of 2.5-4:1, adding a trihydroxymethyl propane tris (3-mercaptopropionic acid ester) maleic acid crystal modifier, uniformly stirring, and adjusting pH to 5.5-6.5 to obtain white slurry; step 2, fully stirring and refluxing the prepared slurry in a reactor at 90-100 DEG C to obtain alpha-hemihydrate calcium sulfate slurry; and step 3, performing suction filtering, washing and drying on the slurry. The method can prepare flaky alpha-calcium sulfate hemihydrate crystals with high purity, small particle size and uniform distribution, which meet the requirements of medical implant bone repair materials. The diameter of the flaky alpha-calcium sulfate hemihydrate crystals is less than 5 mu m, the aspect ratio is less than 0.5, the maximum bending strength is as high as 21.4 MPa, and the compressive strength is as high as 50.7 MPa.

The invention relates to the field of aviation key part repairing, in particular to a repairing method of an aero-engine blade. The repairing method comprises the following steps that a blade to be repaired is fixed in a forming cavity of selective laser melting equipment; powder is laid in the forming cavity to cover a to-be-repaired area of the blade, a laser beam is used for scanning and melting the powder along a set path at set power, and the scanning path is in the chordwise direction of the blade; after a molten pool is solidified, a deposition layer is formed, on the premise that powder is not added, the power of the laser beam is reduced, the deposition layer is scanned again according to the set path to eliminate crystal grains on the surface of the deposition layer, and then a remelting layer is formed; and the operations are repeatedly carried out until repairing is completed. Thus, the powder is deposited on the blade layer by layer in the chordwise direction of the blade,columnar crystals can grow epitaxially and directionally in the heat flow direction, the transverse grain boundary of the blade in the chordwise direction is reduced, and the repaired blade shows good mechanical properties at high temperature.

The invention belongs to the technology of fiber polarizer manufacture, and relates to a crystal growth furnace of fiber polarizer, which achieves specific temperature gradient distribution. The crystal growth furnace comprises an upper heat furnace and a lower heat furnace which are arranged up and down correspondingly, wherein a crystal growth cavity is formed in the upper heat cavity, and a substrate groove is formed in the lower heat furnace corresponding to the crystal growth cavity; the cross section of the crystal growth cavity is basically the same as the crystal shape, but the area ofthe cross section of the crystal growth cavity is far larger than that of the crystal, and a symmetric interval is kept between the crystal growth cavity and the crystal. According to the crystal growth furnace, by designing and controlling a temperature field and sufficiently utilizing the impact regulation of the hearth surface situation on the temperature field, the growth defect rate of sodium nitrate monocrystal can be reduced, high quality and high reliability of a fiber polarizer can be realized, and the anisotropic temperature expansion coefficients and easy cracking in alternating temperature of sodium nitrate monocrystal can be overcome.

The invention discloses an antimony sulfide film preferentially growing in the direction of a one-dimensional chain belt and a preparation method of the antimony sulfide film. Under the action of an electric field of a plasma generator, inert gas such as argon is subjected to the action of the electric field and then is subjected to plasma treatment to obtain high-activity argon ions and electrons. High-activity argon ions and electrons collide with each other to return to the ground state, energy is released to enable the environment temperature to rise, the rising environment temperature canpromote a sulfur source to be molten so as to generate sulfur steam, and the sulfur steam is ionized under the collision action of an electric field and the high-activity argon ions. Meanwhile, particles such as high-activity argon ions and electrons continuously collide with the surface of the sulfur source, and the sulfur source is directly ionized. Under the two paths, the plasma sulfur is continuously increased and is combined with various argon particles to form a plasma-state sulfur atmosphere. The plasma-state sulfur atmosphere is diffused to the surface of the metal antimony film through thermal motion and reacts with the metal antimony film under the heating condition, and therefore the antimony sulfide film which grows preferentially in the crystal face direction of (221), (211)and/or (151) is obtained.