40results about How to "Achieve directed growth" patented technology

The invention provides a preparation method of a polymer-based metal organic framework hybrid membrane and belongs to the technical field of membrane separation. The method comprises the following steps: pre-treating a polymer-based membrane so that the surface of the polymer-based membrane has negative electricity; then immersing the modified membrane into a water solution of metal ions with positive electricity and polymer cations, enabling the metal ions and a polymer to be subjected to a chelating effect and assembling on the surface of the polymer membrane through electrostatic attraction; immersing the membrane with the surface assembled with the metal ions and the cation polymer into an oil phase solution of an organic ligand; carrying out an interface reaction for 10min-120min to grow an MOFs (Metal-organic Frameworks) crystal on the surface of the membrane in situ; and washing and drying to obtain the polymer-based metal organic framework hybrid membrane. The invention provides the novel preparation method of the polymer-based metal organic framework hybrid membrane; the method has the advantages of moderate preparation conditions, simplicity and feasibility, easy amplification and the like; and the prepared membrane is used for removing dyestuff and has a good separation performance and a wide application prospect.

The invention relates to a method for preparing a nickel-based superalloy Rene80 directionally-grown column crystal / single crystal alloy and manufacturing parts, and belongs to the processing field of the laser materials. The method is carried out in atmosphere; a high-energy beam is taken as the heat source; the movement of the high-energy beam is achieved under the control of a numerical control system; the Rene80 powder flow conveyed by a carrier gas is smelted and deposited on a directionally-solidified nickel-based alloy substrate layer by layer; in this way, the nickel-based superalloy and parts having directionally-grown straight column crystal structure / single crystals and different cross-section shapes can be directly manufactured. The nickel-based alloy Rene80 directionally-grown column crystal / single crystal alloy parts manufactured by the method can be applied to manufacturing the hot end parts of naval ships, gas turbines and aero-engines.

The invention relates to a device and a method for growing cadmium zinc telluride crystals in a mobile tellurium solvent melting zone and belongs to the technical field of the growth of special crystals. The method is characterized by comprising the following steps of: feeding 99.99999 percent high-purity raw materials of which the stoichiometric proportion meets Cd1-xZnxTe (x=0.04-0.8) into two quartz tubes; adding 30 to 80 mass percent of excessive tellurium (Te) into one of the quartz tubes; vacuumizing and sealing the quartz tubes respectively and synthesizing materials in the quartz tubes to obtain polycrystalline rods and alloys rich in the Te in a rocking furnace; feeding seed crystals, the alloys rich in the Te and the polycrystalline rods into a long crystal tube, vacuumizing, sealing and placing the long crystal tube in a furnace body, wherein the alloys rich in the Te are positioned in a high-frequency induction heater at the temperature of 700 to 950 DEG C; raising the heater at a speed of 0.02 to 2mm / h and rotating the long crystal tube at the same time; and adding excessive Te in an alloy area rich in the Te to obviously reduce the melting point to ensure that the polycrystalline rods are continuously dissolved from the upper part of melt and cadmium zinc telluride single crystals are continuously precipitated from the lower part of the melt along with the rising. The method and the device for growing the cadmium zinc telluride crystals have the advantages of obviously reducing the growing temperature and the impurity concentration of the crystals.

The invention discloses a device for growing tellurium-zinc-cadmium crystals by a traveling heater method, which is provided with a high-frequency electromagnetic induction heater and upper and lower resistance heating furnaces, wherein the upper and lower resistance heating furnaces form a holding zone at an intermediate heating section of a growth furnace body; a servo rotating mechanism drives an aluminum oxide support bar to drive a quartz material pipe to rotate; a servo linear motion mechanism drives the growth furnace body to make an up-and-down motion in the vertical direction; a control system controls output power of the high-frequency electromagnetic induction heater and the upper and lower resistance heating furnaces, and also controls the servo rotating mechanism, so that the tellurium-zinc-cadmium crystal growth material is positioned at the intermediate heating section of the growth furnace body; and the control system controls the servo linear motion mechanism to ascend at uniform speed, and also controls the servo rotating mechanism, so that the quartz material pipe rotates at uniform speed. The device disclosed by the invention can lower the crystal growth temperature, and reduces the impurity contamination; and the existence of the zone melting process has a purification action on the crystals, thereby finally acquiring the high-purity tellurium-zinc-cadmium crystals which completely conform to the requirements as a detector material.

The invention discloses a preparation method of aptamer-induced Ag2S quantum dots. The method comprises the following steps: firstly dispersing aptamers with terminals modified with cytosine C in deionized water, then adding an AgNO3 water solution, performing magnetic stirring at room temperature, slowly dropping a Na2S water solution into a mixture and drying a product so as to obtain the Ag2S quantum dots. According to the method disclosed by the invention, the aptamers are taken as inducers in a water phase, the reaction is performed at room temperature, the fixed-direction growth of the Ag2S quantum dots is realized, then ultra-fine nano-particles with good dispersion are obtained and the prepared Ag2S quantum dots can be used as a novel near-infrared region fluorescent material and further have specific identification function against target molecules. The preparation method disclosed by the invention is simple and economic and suitable for large-scale production.

The invention discloses a fabrication method for a hydrogel / macromolecule polymer film muscular tissue support. The method comprises obtaining a three-dimensional support structure through a layer-upon-layer stacking mode; designing and fabricating a blood vessel network structure mold and a directional flow passage mold according to muscle structural characteristics; fabricating polymer directional film through an electro-spinning technology, fabricating a support single-layer plane structure, stacking other layers of supports on the three-dimensional support structure, and performing covering with the macromolecule polymer film support bonded on the outermost layer to obtain the hydrogel / macromolecule polymer film support. According to the method, the blood vessel network and the directional flow passage are fabricated on hydrogel, directional growth of cells can be achieved through the directional flow passage, nutrition and oxygen supply can be achieved through blood vessel network pipes, the polymer film covered on the periphery has a directional structure, and accordingly, directional growth of peripheral cells can be achieved, stretched film is bound and sewn, and fixation of the support is achieved.

The invention relates to a method for preparing zinc oxide nano belt material in ordered arrangement, which realizes the large area orienting growth of the zinc oxide nano belt by applying catalytic inducing technology, preparing zinc oxide nano belt material of good crystallinity in mass by controlling reacting temperature and velocity, providing a method which employs Cu, Sn, Ag, and Au and relative salt as substrate, putting the substrate into reacting furnace and by using the catalytic action of the catalyst and through the chemical vapour deposition process to realize the orienting growth of the zinc oxide nano belt on the substrate. The invention is characterized by the simple device structure, easy operation and wide usage in the field of microelectronics and photoconducting device.

The invention provides a controllable preparation method based on a covalent organic framework and an energy storage application thereof. A covalent organic framework COFs material connected with beta-ketoamide is employed as a main material, and successful introduction of an energy storage component in the COFs material and effective control of the microstructure are realized by designing a topological structure of the COFs material and selecting a polymerization monomer prepolymerization environment of the COFs material; wherein anthraquinone molecules are used as an energy storage component, so that the COFs material can show obvious electrochemical energy storage activity; meanwhile, directional growth of the COFs material in different dimensions is achieved through mechanical grindingand the double induction effect of different reaction solvents in the organic framework unit molecule prepolymerization process, and finally the covalent organic crystal material G-S-COFs energy storage material with the rod cluster-shaped microstructure is obtained. Then, through a solvent-process polymerization step, the flower-shaped covalent organic crystal material C-S-COFs composed of nanosheets can be finally prepared. The method has the advantages that on the basis that the energy storage activity of the COFs material is guaranteed, the defects that the morphology of the COFs materialis amorphous and the growth process is uncontrollable under the solvothermal condition are effectively overcome.

The invention relates to the field of polysilicon purification, in particular to a polysilicon directional solidification device which comprises a furnace body, a quartz crucible is placed in the furnace, a graphite heating unit, an insulating sleeve and a induction coil are arranged on the outer wall of the quartz crucible from inside to outside in sequence in a surrounding manner, an ingot mechanism communicated with the bottom of the furnace body is arranged at the bottom of the quartz crucible, the height of the insulating sleeve is 1.5 to 2 time higher of that of the quartz crucible, a graphite spiral plate is arranged at the upper part of the ingot mechanism, a spiral channel built in the graphite spiral plate is communicated with the inlet of the ingot mechanism, and outlets are formed in the edge of the two sides of the graphite spiral plate. According to the device, thermal radiation of the sidewall of the quartz crucible generated in the pulling process can be better intercepted, thermal radiation of the sidewall of the quartz crucible is effectively decreased, and the directional solidification effect is better than conventional solidification method. The device is short in warming up time, small in insulating energy consumption, controllable in cooling speed, the crystal growth is better in cooling method when compared with conventional mode, and can better realize directional solidification effect.

The invention provides a directional heteroepitaxy method and a silicon-based germanium tin alloy material. The method comprises the following steps of S1, etching on a silicon substrate to form a silicon etching window, wherein the crystal orientation of the silicon substrate is (100); S2, performing anisotropic wet etching of silicon on the silicon etching window to form a silicon groove; S3, carrying out cleaning and high-temperature deoxidation treatment on the etched silicon substrate; S4, depositing Sn atoms in the silicon groove by using a molecular beam epitaxy method; S5, annealing toagglomerate Sn into a ball; and S6, depositing the Ge atoms, and obtaining a GeSn micron strip with tin growing in an autocatalysis mode in the silicon groove in an oriented mode. The invention provides a macrolattice mismatch material system epitaxy method which shortens the growth period of the traditional buffer layer epitaxy and is expected to develop the large-scale device preparation and application.

Belonging to the technical field of nano-material preparation, the invention relates to a preparation method of a directionally growing titanium dioxide nano-cluster array. The method is characterized by being realized through the following technical scheme of: utilizing a dual-beam or multiple-beam laser interference optical path system to perform laser interference lithography etching on a cleaned FTO conductive substrate, putting the pre-patterned FTO conductive substrate into a solution composed of deionized water, tetrabutyl titanate and concentrated sulfuric acid for hydrothermal reaction, and conducting heating by a constant temperature drying box to prepare the directionally growing titanium dioxide nano-cluster array. Through change of the parameters of laser interference lithography, the growth cycle of the titanium dioxide nano-cluster array can be adjustable from the nanoscale to the micron scale, and the diameter and length of titanium dioxide nanowires can be adjusted by changing the hydrothermal process heating time and heating temperature.

The invention discloses a method for optimizing the electrical conductivity of a porous carbon structure / polymer composite material. Primarily, high temperature annealing treatment is carried out on the basis of a three-dimensional graphene structure to obtain a stable porous structure, plasma chemical vapor deposition technology is utilized for orientated growth of carbon nanotubes between the pore walls of the three-dimensional graphene structure so as to form a multistage network of graphene and carbon nanotubes, thereby obtaining an isotropic porous carbon structure serving as the reinforcement body of the polymer, and the reinforcement body can significantly improve the conductive properties of the porous carbon structure / polymer composite material. In the invention, the introduction of the carbon nanotubes realizes diversification of the conductive channel, thus being conducive to construction of a multi-channel electronic transmission path. At the same time, the porous carbon structure involved in the invention also has the advantages of low density, high specific surface area and high porosity, etc.

The invention discloses a control method for orientated growth of hemi-hydrate gypsum monocrystals. The control method comprises the following steps: adding an acidity regulating agent into phosphogypsum, adding water, uniformly mixing, aging, then loading into a reactor with a condensation refluxing device, adding an impurity stabilizer and a crystal face selective absorbent, uniformly mixing, performing the heating reaction, adding an ion movement controller into the reaction system, after the reaction is ended, cooling, filtering, and drying solids to obtain morphology-controllable hemi-hydrate gypsum monocrystals. The method has the characteristics of simple process and low cost and is suitable for industrialized production.

The invention discloses an orientated growth FeS nanomaterial based on carbon cloth, and a preparation method and an application of the FeS nanomaterial. The preparation method comprises the steps of:1) mixing and grinding analytically pure organic acid iron salt and urea at a mass ratio of 1:(1-7) to form a mixture A, 2) activating the carbon cloth for future use, 3) mixing the mixture A and polyacrylamide at a mass ratio of 3:1 for carbon hydrothermal reaction, 5) performing drying after the reaction is finished, and 6) loading the dried carbon cloth and excessive thiourea in a porcelain boat for high temperature calcination to form the orientated growth FeS nanomaterial based on the carbon cloth. The prepared densely growing FeS nanomaterial based on the carbon cloth integrates the advantages of high capacity, easy synthesis and low preparation cost of an iron sulfide material and strong electric conductivity, fixed and fine crystal grains, strong adsorptive capacity and the like of the carbon cloth, and has very high sodium ion storage performance, high charging and discharging capacity and good rate capability.

The invention relates to an SERS substrate as well as a preparation method and application thereof, and the preparation method comprises the following steps: scanning the surface of a first metal film in a first metal film / polymer film double-layer film by using laser, carrying out heating induction, and depositing a second metal film on the surface of the first metal film to obtain the SERS substrate. The preparation method of the SERS substrate is simple, effective and low in cost, and the obtained SERS substrate is high in wrinkle structure stability and can meet the application requirement of a wrinkle type flexible film.

The invention relates to a preparation method and an application of a polymer semiconductor film and is a substrate-based laminate instillation method for preparing the polymer semiconductor film. Themethod is characterized in that an upper substrate having a hydroxyl group attached to the surface and an OTS-modified upper substrate are included, a laminated instillation structure is designed, aand film formation is carried out by instillation under the structure to achieve preparation of large-area high-performance polymer semiconductor films. The polymer semiconductor film is grown on the substrate, on one hand, a problem of film non-uniformity caused by the coffee ring effect in a traditional instillation method is solved, on the other hand, directional guidance during film growth canbe achieved without external force, directional growth of the organic film is facilitated, the method is especially suitable for preparation of high quality polymer films, operation is simple and convenient, experimental requirements are low, and no large instruments are required.

The invention discloses a control method for orientated growth of hemi-hydrate gypsum monocrystals. The control method comprises the following steps: adding an acidity regulating agent into phosphogypsum, adding water, uniformly mixing, aging, then loading into a reactor with a condensation refluxing device, adding an impurity stabilizer and a crystal face selective absorbent, uniformly mixing, performing the heating reaction, adding an ion movement controller into the reaction system, after the reaction is ended, cooling, filtering, and drying solids to obtain morphology-controllable hemi-hydrate gypsum monocrystals. The method has the characteristics of simple process and low cost and is suitable for industrialized production.

The invention provides a crystal modifier, medical flaky alpha-hemihydrate calcium sulfate and a preparation method thereof. The preparation method of the medical flaky alpha-hemihydrate calcium sulfate comprises the following steps: step 1, respectively preparing a calcium salt solution and a sulfate solution, mixing the calcium salt solution and the sulfate solution according to the molar mass ratio of calcium salt to sulfate of 2.5-4:1, adding a trihydroxymethyl propane tris (3-mercaptopropionic acid ester) maleic acid crystal modifier, uniformly stirring, and adjusting pH to 5.5-6.5 to obtain white slurry; step 2, fully stirring and refluxing the prepared slurry in a reactor at 90-100 DEG C to obtain alpha-hemihydrate calcium sulfate slurry; and step 3, performing suction filtering, washing and drying on the slurry. The method can prepare flaky alpha-calcium sulfate hemihydrate crystals with high purity, small particle size and uniform distribution, which meet the requirements of medical implant bone repair materials. The diameter of the flaky alpha-calcium sulfate hemihydrate crystals is less than 5 mu m, the aspect ratio is less than 0.5, the maximum bending strength is as high as 21.4 MPa, and the compressive strength is as high as 50.7 MPa.

The invention discloses a planting method for orientated growth of rice, comprising an orientated positioning sowing seedling-raising phase and an orientated positioning transplanting and seedling-setting phase. In the orientated positioning sowing seedling-raising phase of seeds, the seeds are positioned and sown in a seedling tray to form seedlings according to a linear form in the same direction; and in the orientated positioning transplanting and seedling-setting phase, the seedlings are orientated, positioned and transplanted in a field in sequence, thereby realizing the orientated growth of the rice. In the invention, the seeds are arrayed to raise rice seedlings in sequence in an orientated way by adopting an operating mode of planting the seedling by a machine and sowing the seeds in the seedling tray in a positioning and orientated way; and the seedlings are transplanted in an orientated way, so that the seedlings are arrayed in the field in an orientated way and the tillering of the rice and orientated growth of lead blades can be realized. The planting method is beneficial to controlling the tillering of the rice at early stage and the consistent orientation of the leaf blades, sealing rows in advance, relieving the competition among strains, improving the competitiveness of the rice and weed and the group structure of the rice, fully improving the utilization rate of light energy and realizing the yield increase of the rice.

The invention relates to the field of aviation key part repairing, in particular to a repairing method of an aero-engine blade. The repairing method comprises the following steps that a blade to be repaired is fixed in a forming cavity of selective laser melting equipment; powder is laid in the forming cavity to cover a to-be-repaired area of the blade, a laser beam is used for scanning and melting the powder along a set path at set power, and the scanning path is in the chordwise direction of the blade; after a molten pool is solidified, a deposition layer is formed, on the premise that powder is not added, the power of the laser beam is reduced, the deposition layer is scanned again according to the set path to eliminate crystal grains on the surface of the deposition layer, and then a remelting layer is formed; and the operations are repeatedly carried out until repairing is completed. Thus, the powder is deposited on the blade layer by layer in the chordwise direction of the blade,columnar crystals can grow epitaxially and directionally in the heat flow direction, the transverse grain boundary of the blade in the chordwise direction is reduced, and the repaired blade shows good mechanical properties at high temperature.

The invention discloses a fabrication method for a hydrogel / macromolecule polymer film muscular tissue support. The method comprises obtaining a three-dimensional support structure through a layer-upon-layer stacking mode; designing and fabricating a blood vessel network structure mold and a directional flow passage mold according to muscle structural characteristics; fabricating polymer directional film through an electro-spinning technology, fabricating a support single-layer plane structure, stacking other layers of supports on the three-dimensional support structure, and performing covering with the macromolecule polymer film support bonded on the outermost layer to obtain the hydrogel / macromolecule polymer film support. According to the method, the blood vessel network and the directional flow passage are fabricated on hydrogel, directional growth of cells can be achieved through the directional flow passage, nutrition and oxygen supply can be achieved through blood vessel network pipes, the polymer film covered on the periphery has a directional structure, and accordingly, directional growth of peripheral cells can be achieved, stretched film is bound and sewn, and fixation of the support is achieved.

The invention belongs to the technology of fiber polarizer manufacture, and relates to a crystal growth furnace of fiber polarizer, which achieves specific temperature gradient distribution. The crystal growth furnace comprises an upper heat furnace and a lower heat furnace which are arranged up and down correspondingly, wherein a crystal growth cavity is formed in the upper heat cavity, and a substrate groove is formed in the lower heat furnace corresponding to the crystal growth cavity; the cross section of the crystal growth cavity is basically the same as the crystal shape, but the area ofthe cross section of the crystal growth cavity is far larger than that of the crystal, and a symmetric interval is kept between the crystal growth cavity and the crystal. According to the crystal growth furnace, by designing and controlling a temperature field and sufficiently utilizing the impact regulation of the hearth surface situation on the temperature field, the growth defect rate of sodium nitrate monocrystal can be reduced, high quality and high reliability of a fiber polarizer can be realized, and the anisotropic temperature expansion coefficients and easy cracking in alternating temperature of sodium nitrate monocrystal can be overcome.

The invention discloses an antimony sulfide film preferentially growing in the direction of a one-dimensional chain belt and a preparation method of the antimony sulfide film. Under the action of an electric field of a plasma generator, inert gas such as argon is subjected to the action of the electric field and then is subjected to plasma treatment to obtain high-activity argon ions and electrons. High-activity argon ions and electrons collide with each other to return to the ground state, energy is released to enable the environment temperature to rise, the rising environment temperature canpromote a sulfur source to be molten so as to generate sulfur steam, and the sulfur steam is ionized under the collision action of an electric field and the high-activity argon ions. Meanwhile, particles such as high-activity argon ions and electrons continuously collide with the surface of the sulfur source, and the sulfur source is directly ionized. Under the two paths, the plasma sulfur is continuously increased and is combined with various argon particles to form a plasma-state sulfur atmosphere. The plasma-state sulfur atmosphere is diffused to the surface of the metal antimony film through thermal motion and reacts with the metal antimony film under the heating condition, and therefore the antimony sulfide film which grows preferentially in the crystal face direction of (221), (211)and / or (151) is obtained.

The invention discloses a FeS nanomaterial based on directional growth of carbon cloth and its preparation method and application. The steps of the preparation method are: 1) taking analytically pure organic acid iron salt and urea according to a mass ratio of 1:(1-7) Mixing and grinding to obtain mixture A; 2) activating the carbon cloth for use; 3) mixing mixture A and polyacrylamide in a mass ratio of 3:1 and putting them into carbon hydrothermal reaction; 5) drying after the reaction; 6 ) put the dried carbon cloth and excess thiourea into a porcelain boat and calcinate at high temperature to obtain FeS nanomaterials based on carbon cloth directional growth; the prepared FeS nanomaterials based on carbon cloth dense growth, combined with the high capacity of iron sulfide materials, It has the advantages of easy synthesis, low preparation cost, strong electrical conductivity of carbon cloth, fixed fine grains, and strong adsorption capacity. It has extremely high sodium ion storage performance, high charge and discharge capacity and good rate performance.

The present invention provides a controllable preparation method based on a covalent organic framework and its application in energy storage to β ‑ Ketoamide-linked covalent organic framework COFs materials are the main materials. Through the design of its topology and the selection of the prepolymerization environment of polymerized monomers, the successful introduction of energy storage components in COFs materials and the effective control of microscopic morphology have been achieved. As an energy storage component, anthraquinone molecules can make COFs materials exhibit obvious electrochemical energy storage activities. At the same time, through the double induction of mechanical grinding and different reaction solvents in the prepolymerization process of organic framework unit molecules, COFs materials in different dimensions have been realized. Oriented growth, and finally obtain the covalent organic crystal material G‑S‑COFs energy storage material with a rod-clustered microscopic morphology; directly use the solvent method to polymerize, and finally obtain the flower-shaped covalent organic crystal material C‑S composed of nanosheets -COFs. The advantage of the present invention is that on the basis of ensuring the energy storage activity of the COFs material, it effectively improves the shortcomings of the COFs material's amorphous morphology and uncontrollable growth process under solvothermal conditions.