Method for directional growth of zinc oxide nano-belt

A zinc oxide nanometer, directional growth technology, applied in the direction of zinc oxide/zinc hydroxide, etc., can solve the problems of controllable synthesis of refractory zinc oxide nanoribbons, self-assembly of directional growth zinc oxide nanomaterials, high reaction temperature, etc.

Inactive Publication Date: 2006-06-21
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But so far, various traditional chemical vapor phase methods have shortcomings in the process of synthesizing these materials with special structures: first, the required reaction temperature is...

Method used

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  • Method for directional growth of zinc oxide nano-belt
  • Method for directional growth of zinc oxide nano-belt
  • Method for directional growth of zinc oxide nano-belt

Examples

Experimental program
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Effect test

Embodiment 1

[0026]The diameter of the reactor is 20 mm, and the length of the electric heating furnace is 200 m. Commercially available zinc oxide powder (99.9%) and graphite powder (99%) are mixed in equal mass, ground uniformly, and then placed in a reactor. Fully mix and disperse alcohol and copper oxalate at a mass ratio of 10:1 to form a mixed solution, and coat it on the silicon substrate, then place the treated silicon substrate in the downstream low-temperature area of ​​the reactor gas flow direction to collect the product . Argon (99.9%) was used as carrier gas with a flow rate of 25 sccm. The reactor was heated to 950°C at a speed of 30°C / min, the reaction time was 40min, and the product was deposited in the area of ​​about 800°C. A white deposit was obtained on the silicon substrate, and its morphology was as follows figure 1 shown.

Embodiment 2

[0028] The diameter of the reactor is 20 mm, and the length of the electric heating furnace is 200 mm. Commercially available zinc oxide powder (99.9%) and graphite powder (99%) are mixed in equal mass, ground uniformly, and then placed in a reactor. Fully mix and disperse alcohol and copper oxalate at a mass ratio of 10:1 to form a mixed solution, then impregnate the carbon cloth in the suspension, take it out and dry it, and place it in the downstream low-temperature area of ​​the reactor gas flow direction to collect the product. Argon (99.9%) was used as the carrier gas with a flow rate of 25 sccm. The reactor was heated up to 900°C at a speed of 30°C / min, and the reaction time was 60 minutes, and the product was deposited in the area of ​​500°C. A white or light gray deposit is obtained on the substrate, and the form of the product is as follows figure 2 shown.

Embodiment 3

[0030] The diameter of the reactor is 20 mm, and the length of the electric heating furnace is 200 mm. Commercially available zinc oxide powder (99.9%) and graphite powder (99%) are mixed in mass, ground uniformly, and then placed in a reactor. The active copper oxide particles are dispersed on the porous nickel substrate as a catalyst, and placed in the downstream low temperature area of ​​the reactor gas flow direction to collect the product. Argon (99.9%) was used as the carrier gas with a flow rate of 25 sccm. The reactor was heated to 950°C at a speed of 30°C / min, and the reaction time was 30 minutes, and the product was deposited in the area of ​​700°C. A white deposit was obtained on the substrate, and the form of the product was as image 3 shown.

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Abstract

The invention relates to a method for preparing zinc oxide nano belt material in ordered arrangement, which realizes the large area orienting growth of the zinc oxide nano belt by applying catalytic inducing technology, preparing zinc oxide nano belt material of good crystallinity in mass by controlling reacting temperature and velocity, providing a method which employs Cu, Sn, Ag, and Au and relative salt as substrate, putting the substrate into reacting furnace and by using the catalytic action of the catalyst and through the chemical vapour deposition process to realize the orienting growth of the zinc oxide nano belt on the substrate. The invention is characterized by the simple device structure, easy operation and wide usage in the field of microelectronics and photoconducting device.

Description

technical field [0001] The invention belongs to the field of new material synthesis and relates to a method for directional growth of zinc oxide nanobelts [0002] The directional growth zinc oxide nanobelt material is synthesized under the induction of a catalyst by using a carbothermal reduction method. technical background [0003] Zinc oxide nanomaterial is a semiconductor material with a band gap of 3.37eV and a large exciton binding energy of 60meV at room temperature. Compared with other materials (such as ZnSe, ZnS, GaN), zinc oxide is a material that is more suitable for ultraviolet light emission at room temperature or higher temperature, so it has great application potential in light-emitting diodes, fuel cells, lasers, etc. The non-centrosymmetric hexagonal structure of zinc oxide determines that zinc oxide nanomaterials also have excellent piezoelectric and pyroelectric properties; the stable existence of its polar (0001) crystal face predestined its use in het...

Claims

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Application Information

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IPC IPC(8): C01G9/02
Inventor 邱介山孙天军赵宗彬
Owner DALIAN UNIV OF TECH
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