Device for growing tellurium-zinc-cadmium crystals by traveling heater method

A cadmium zinc telluride and heater technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problem of reducing μτ, reduce contamination, increase crystal single crystal volume and yield, and ensure stability Effect

Inactive Publication Date: 2013-01-09
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But the deep energy levels are traps and recombination centers, such as the introduced deep energy level density is greater than 10 13 / cm3, will greatly reduce the value of μτ (the product of carrier lifetime and mobility)

Method used

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  • Device for growing tellurium-zinc-cadmium crystals by traveling heater method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] see figure 1 The device for growing cadmium zinc telluride crystals by moving the heater method in this embodiment includes a furnace frame 7, a growth furnace body arranged above the furnace frame 7, and a quartz material tube loaded with cadmium zinc telluride crystal growth materials is placed on an alumina support rod , the alumina support rod is placed in the growth furnace body, the circulating cooling water system 3 and the Soshu growth furnace body jointly control the temperature of the crystal growth process, the growth furnace body is installed vertically, and the middle heating section of the growth furnace body is equipped with high-frequency electromagnetic induction Heater 2, the upper and lower sections of the growth furnace body are the upper and lower resistance heating furnaces 1, and the upper and lower resistance heating furnaces 1 form the heat preservation area in the middle heating section of the growth furnace body, and the bottom end of the alumi...

Embodiment 2

[0019] The technical solution of this embodiment is basically the same as that of Embodiment 1, especially in that:

[0020] In this embodiment, the temperature of the high-frequency electromagnetic induction heater 2 is set to 800° C., and the cadmium zinc telluride crystal growth material is kept warm in the growth furnace for 24 hours to finally obtain the cadmium zinc telluride crystal.

Embodiment 3

[0022] The technical solutions of this embodiment are basically the same as those of the foregoing embodiments, and the special features are:

[0023] In this embodiment, the growth furnace body is raised at a speed of 0.05mm / h, and at the same time, the quartz material tube loaded with the CdZnTe crystal growth material is rotated at a constant speed by the alumina support rod at a speed of 15r / min, and finally the CdZnTe crystal growth material is obtained. crystals.

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Abstract

The invention discloses a device for growing tellurium-zinc-cadmium crystals by a traveling heater method, which is provided with a high-frequency electromagnetic induction heater and upper and lower resistance heating furnaces, wherein the upper and lower resistance heating furnaces form a holding zone at an intermediate heating section of a growth furnace body; a servo rotating mechanism drives an aluminum oxide support bar to drive a quartz material pipe to rotate; a servo linear motion mechanism drives the growth furnace body to make an up-and-down motion in the vertical direction; a control system controls output power of the high-frequency electromagnetic induction heater and the upper and lower resistance heating furnaces, and also controls the servo rotating mechanism, so that the tellurium-zinc-cadmium crystal growth material is positioned at the intermediate heating section of the growth furnace body; and the control system controls the servo linear motion mechanism to ascend at uniform speed, and also controls the servo rotating mechanism, so that the quartz material pipe rotates at uniform speed. The device disclosed by the invention can lower the crystal growth temperature, and reduces the impurity contamination; and the existence of the zone melting process has a purification action on the crystals, thereby finally acquiring the high-purity tellurium-zinc-cadmium crystals which completely conform to the requirements as a detector material.

Description

technical field [0001] The invention relates to a crystal preparation device, in particular to a cadmium zinc telluride crystal preparation device, which can be used to obtain high-purity cadmium zinc telluride crystals and prepare special crystal materials that meet the level requirements of detectors. Background technique [0002] Since CdZnTe (CZT) has a higher average atomic number and a larger forbidden band width, the CZT detector has a larger absorption coefficient and a higher count rate, especially at room temperature without any cooling equipment. Work, so it is smaller and more convenient to use. At present, the wide application of CZT detectors is mainly limited by several aspects such as crystal performance, volume and cost. The preparation method of crystals is mainly to grow CZT crystals by high-voltage Bridgman method or improved vertical Bridgman method. [0003] However, in order to obtain high-resistance crystals, these two methods are usually implemented...

Claims

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Application Information

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IPC IPC(8): C30B29/46C30B11/00
Inventor 王林军魏高力张继军闵嘉华梁晓燕
Owner SHANGHAI UNIV
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