Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Antimony sulfide film preferentially growing in direction of one-dimensional chain belt and preparation method of antimony sulfide film

A technology of antimony sulfide and thin film, which is applied in semiconductor/solid-state device manufacturing, photovoltaic power generation, electrical components, etc. It can solve the problems such as difficult preparation of antimony sulfide thin film, and achieve short-process preparation, overcome crystal growth, and high photoelectric conversion performance Effect

Pending Publication Date: 2020-11-06
KUNMING UNIV OF SCI & TECH
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims at the problem that it is difficult to prepare an antimony sulfide thin film preferentially grown along the direction of one-dimensional chain bands in the prior art, and provides an antimony sulfide thin film with preferential growth along the direction of one-dimensional chain bands and a preparation method thereof. The basic process may be as follows figure 1 The preparation method of the plasma sulfur atmosphere directional heat treatment of the metal antimony film is shown, that is, under the electric field of the plasma generator, the inert gas, such as argon, is plasmaized after the electric field to obtain highly active argon ions and electrons

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Antimony sulfide film preferentially growing in direction of one-dimensional chain belt and preparation method of antimony sulfide film
  • Antimony sulfide film preferentially growing in direction of one-dimensional chain belt and preparation method of antimony sulfide film
  • Antimony sulfide film preferentially growing in direction of one-dimensional chain belt and preparation method of antimony sulfide film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Embodiment 1: A kind of preparation method of the antimony sulfide thin film that preferentially grows along the one-dimensional chain belt direction, concrete steps are as follows:

[0036] (1) Prepare metal antimony thin film by magnetron sputtering method:

[0037] Install the antimony target in the magnetron sputtering equipment, put the cleaned soda-lime glass sheet into the sample stage, and set the power at 20W, the sputtering time at 100min, and the working gas pressure at 0.9Pa in an argon atmosphere Preparing metal antimony thin films under the conditions;

[0038] The surface SEM figure of the metal antimony thin film of this embodiment is shown in image 3 ,From image 3 It can be seen that the metal antimony thin film prepared by magnetron sputtering has the characteristics of smooth surface and compactness, and is suitable for preparing antimony sulfide thin film by directional heat treatment in plasma sulfur atmosphere;

[0039] (2) Prepara...

Embodiment 2

[0046] Embodiment 2: A kind of preparation method of the antimony sulfide thin film that preferentially grows along the one-dimensional chain belt direction, concrete steps are as follows:

[0047] (1) Prepare metal antimony thin film by chemical bath deposition method:

[0048] Take 3 grams of antimony trichloride solid raw material, 6 milliliters of ammonia water, and 25 milliliters of triethanolamine in a small beaker. After the dissolution and complexation are complete, pour it into a 250 milliliter volumetric flask and adjust the pH of the solution with hydrochloric acid or sodium hydroxide. 7.4, put the solution in a 500 ml beaker, put washed and dried Mo-coated glass (square resistance value is 20 Ω) in the beaker as the experimental base material; After reacting for 10min, the Mo-coated glass was taken out, rinsed with secondary water and dried to obtain a thin film attached to the Mo-coated glass as Sb(OH) 3 ; Sb(OH) 3 Thin film through H 2 Reduction to pr...

Embodiment 3

[0056] Embodiment 3: A kind of preparation method of the antimony sulfide thin film that preferentially grows along the direction of one-dimensional chain belt, concrete steps are as follows:

[0057] (1) Preparation of metal antimony thin films by spray pyrolysis:

[0058] Accurately weigh 20g of analytically pure SbCl 3 Dissolve in 250ml of dilute HCl with a mass fraction of 5% 3 In the solution, under the protective atmosphere of argon, the SbCl 3 The solution is atomized into aerosol micro-droplets, and a flat electric furnace with Mo conductive glass is placed in the system. , the tail gas is discharged after being neutralized by the absorbing bottle of lye; the film on the flat electric furnace is further heated in H 2 Metal antimony film can be obtained by reduction under atmosphere for 30 minutes;

[0059] (2) Preparation of antimony sulfide film by directional heat treatment in plasma sulfur atmosphere:

[0060] The sulfur source is placed in the ch...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
particle sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses an antimony sulfide film preferentially growing in the direction of a one-dimensional chain belt and a preparation method of the antimony sulfide film. Under the action of an electric field of a plasma generator, inert gas such as argon is subjected to the action of the electric field and then is subjected to plasma treatment to obtain high-activity argon ions and electrons. High-activity argon ions and electrons collide with each other to return to the ground state, energy is released to enable the environment temperature to rise, the rising environment temperature canpromote a sulfur source to be molten so as to generate sulfur steam, and the sulfur steam is ionized under the collision action of an electric field and the high-activity argon ions. Meanwhile, particles such as high-activity argon ions and electrons continuously collide with the surface of the sulfur source, and the sulfur source is directly ionized. Under the two paths, the plasma sulfur is continuously increased and is combined with various argon particles to form a plasma-state sulfur atmosphere. The plasma-state sulfur atmosphere is diffused to the surface of the metal antimony film through thermal motion and reacts with the metal antimony film under the heating condition, and therefore the antimony sulfide film which grows preferentially in the crystal face direction of (221), (211)and / or (151) is obtained.

Description

technical field [0001] The invention relates to an antimony sulfide thin film preferentially grown along the direction of one-dimensional chain strips and a preparation method thereof, belonging to the technical field of photoelectric functional materials. Background technique [0002] The crystal structure of antimony sulfide belongs to the orthorhombic stibnite structure and belongs to the Pnma (#62) space group. It is a green, non-toxic, abundant reserve (the abundance of antimony in the earth's crust is 0.2ppm), and low price. Sb 2 S 3 The composition and phase of the product are relatively simple, and there is only one phase composition at room temperature, which can effectively avoid the problem of impurity phase formation during the preparation process. [0003] Antimony sulfide (Sb 2 S 3 ) has a suitable band gap (1.7-1.8eV), large absorption coefficient (short-wave absorption coefficient>10 5 cm -1 ), a large relative permittivity (9.5, greater than 7.1 of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L31/032H01L31/0445
CPCH01L21/02568H01L21/02609H01L31/032H01L31/0445Y02E10/50
Inventor 宋宁欧于学杨佳刘国豪张君司圣和徐宝强李绍元万贺利杨斌马文会熊恒曲涛李一夫田阳蒋文龙刘大春郁青春戴永年
Owner KUNMING UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com