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Liquid composition and etching method therewith

A liquid composition and etching technology, applied in the direction of surface etching compositions, chemical instruments and methods, etc., can solve problems such as semiconductor layer damage

Inactive Publication Date: 2016-06-08
MITSUBISHI GAS CHEM CO INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] However, since semiconductor layers such as IGZO are damaged in a low pH region, the etchant disclosed in Patent Document 3 needs to be adjusted to a pH range of 2.5 to 5 for use.

Method used

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  • Liquid composition and etching method therewith
  • Liquid composition and etching method therewith
  • Liquid composition and etching method therewith

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0123] 79.99 g of pure water and 2.86 g of 70% nitric acid (manufactured by Wako Pure Chemical Industries, Ltd.) were put into a polypropylene container with a capacity of 100 ml. Further, 0.10 g of aminomethylphosphonic acid (manufactured by MP Biomedicals, Inc.) was added, and then 14.29 g of 35% hydrogen peroxide (manufactured by Mitsubishi Gas Chemical Co., Ltd.) was added and stirred to uniformly mix the respective components. Finally, 2.76 g of 48% potassium hydroxide (manufactured by Kanto Chemical Co., Ltd.) was added so that the pH value became 1.0, and a liquid composition was prepared. The compounding quantity of hydrogen peroxide of the obtained liquid composition was 5 mass %, the compounding quantity of nitric acid was 2 mass %, the compounding quantity of aminomethylphosphonic acid was 0.10 mass %, and the compounding quantity of potassium hydroxide was 1.33 quality%.

[0124] Table 1 shows the results obtained by implementing the above-mentioned evaluation usi...

Embodiment 2～13

[0126] In Example 1, except that the kind and pH of C component were shown in Table 1, it carried out similarly to Example 1, prepared the liquid composition, and implemented the said evaluation using this liquid composition. Table 1 shows the obtained results.

Embodiment 14～18

[0128] In Example 1, the concentration of hydrogen peroxide, the concentration of nitric acid, and the type and concentration of component C are as shown in Table 1. Except that, the same operation as in Example 1 was performed to prepare a liquid composition, and the liquid composition was used to implement above evaluation. The obtained results are shown in Table 1.

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PUM

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Abstract

The invention relates to a liquid composition and an etching method therewith, wherein the liquid composition is used for etching copper contianing indium, gallium or zinc oxides or metal compounds with copper as main components. The etching method is cahracterized by contacting the liquid composition with the metal compound having copper or with copper as main components. The liquid composition includes A) H2O2; B) acid without fluorine atom; C) more than one from phosphonic acid, phsophates, 1H-tetrazole-1-acetic acid, 1H-tetrazole-5-acetic acid and 4-amino-1,2,4-triazole; and D) water, pH of hte composition is lwoer than 5. THe liquid composition can inhibit damage on teh indium, gallium or zinc oxides and etch copper on the oxides or the metal compounds with copper as main components.

Description

technical field [0001] The present invention relates to a liquid composition for etching copper or copper formed on an oxide (IGZO) containing indium, gallium, zinc, and oxygen, and an etching method using the same, and a substrate manufactured by the method. The metal compound mainly composed of copper performs etching, which suppresses damage to IGZO, and copper or the metal compound mainly composed of copper is etched. Background technique [0002] In recent years, in the process of miniaturization, weight reduction and low power consumption of electronic equipment, especially in the field of display devices such as liquid crystal displays and electroluminescent displays, various oxides are being used as materials for semiconductor layers. Development of semiconductor materials. [0003] Oxide semiconductor materials are mainly composed of indium, gallium, zinc, and tin. Indium gallium zinc oxide (IGZO), indium gallium oxide (IGO), indium tin zinc oxide (ITZO), indium V...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/18C09K13/06
CPCC09K13/06C23F1/18
Inventor 竹内秀范夕部邦夫
Owner MITSUBISHI GAS CHEM CO INC
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