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Field electron emission device structure with reverse bias nano junction

A field electron emission and device structure technology, which is applied to electrical components, electrode devices and related components, cathode ray tubes/electron beam tubes, etc. volatility etc.

Active Publication Date: 2016-06-15
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the existing device structure, the PN junction is located on the surface of the substrate, and it is difficult for an external electric field to form a penetrating effect on the junction region. The resistance of this PN junction in the current limiting region is fixed, similar to the series resistance; if the resistance of the PN junction If it is too small, it will be difficult to effectively suppress the fluctuation of the field emission current. If the resistance value of the PN junction is too large, its voltage division effect will cause the driving voltage of the electron source to increase, the emission current will be difficult to increase, and the power consumption will increase.

Method used

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  • Field electron emission device structure with reverse bias nano junction
  • Field electron emission device structure with reverse bias nano junction
  • Field electron emission device structure with reverse bias nano junction

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] The preparation of the field electron emission device structure (single electrode, emitter: p-Si / n-ZnO) with the reverse bias nano-junction comprises the following steps:

[0039] S1. In P-type doping (10 19 cm -3 ) on the silicon wafer, using a magnetron sputtering deposition system to deposit a Zn seed layer with a thickness of 20 to 50 nm on its surface;

[0040] S2. Spin-coat electron beam photoresist (PMMA) with a thickness of about 500-650 nm;

[0041] S3. Using the electron beam exposure system to directly write the electron beam photoresist;

[0042] S4. developing the exposed sample to obtain a PMMA nanohole array template with a pitch of 4 μm, and the hole diameter is less than 200nm;

[0043] S5. Using the hydrothermal method (Zn 2+ 0.005mol / L, 80°C, 18h) to grow a one-dimensional ZnO nanostructure perpendicular to the substrate in the micropore, the method of growing ZnO refers to the patent application number 200710032889.1);

[0044] S6. Use ultrasoni...

Embodiment 2

[0049] The preparation of the field electron emission device structure (single electrode, emitter: p-Si / n-Si) with the reverse bias nano-junction comprises the following steps:

[0050] S1. Select the N-type doping (10 14 cm -3 ~10 18 cm -3 ) P-type doping of silicon semiconductor (10 19 cm -3 ~10 21 cm -3 ) a silicon semiconductor substrate, using a thin film deposition system to deposit a metal Cr layer with a thickness of about 50nm on its surface;

[0051] S2. Spin-coat negative electron beam photoresist (AR-N7520.18) with a thickness of about 400nm;

[0052] S3. Using an electron beam lithography system to perform pattern exposure on the photoresist;

[0053] S4. Develop the exposed sample by using a mixed solution of tetramethylammonium hydroxide (TMAH) and deionized water with a volume ratio of 4:1 to obtain a photoresist lattice pattern with a diameter of 100-200 nm;

[0054] S5. Using the photoresist lattice pattern as a mask, transfer the photoresist pattern...

Embodiment 3

[0060] The experimental method is the same as in Example 1 or 2, the only difference is that zinc oxide is replaced by N-type doped tin dioxide, ferric oxide, titanium oxide, tungsten oxide and other metal oxides or gallium nitride, indium phosphide, etc. any of the materials.

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Abstract

The invention discloses a field electron emission device structure with a reverse bias nano junction. The device structure comprises an emitter and an electrode, wherein the electrode comprises two segments of one-dimensional nano materials; one segment is an N-type doped semiconductor for emitting electrons; the other segment is a P-type doped semiconductor or a metal capable of forming a schottky contact with the N-type doped semiconductor; the two segments of one-dimensional nano materials are in contact to form a PN junction or a schottky junction; and the PN junction or the schottky junction protrudes on the surface of a substrate. The reverse bias nano junction of the device structure has a current limiting effect and can inhibit field emission current fluctuation; meanwhile, due to the punch-through effect of an electric field, exerted by the electrode, in a nanojunction region, the resistance of a nanojunction is reduced along with an increase of the electric field; the voltage (current) endurance capability of an emitter is improved; the reliability of the device is improved; the problems of over-high drive voltage and over-high power consumption caused by a voltage drop of a junction resistor are reduced; and improvement of the uniformity of the field emission characteristics of the emitter in an array is facilitated.

Description

technical field [0001] The invention relates to the technical field of nanometer electronic devices, in particular to a field electron emission device structure with a reverse biased nanometer junction. Background technique [0002] Field emission electron source arrays have potential applications in flat panel displays, parallel electron beam lithography, and miniature X-ray sources. The electron source materials currently under study mainly include semiconductor nanotips and nanowires, metal nanotips and nanowires, carbon-based materials (carbon nanotubes / graphene), and metal oxide nanowires. Due to the differences in the geometric morphology and surface electronic structure of the emitters in the electron source array, which respectively cause the local electric field strength and work function of the emitting end face to be different, the consistency of the field emission characteristics of the emitters in the array is poor. The emitters in the array are arranged in par...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J29/48H01J9/02
CPCH01J9/025H01J29/481
Inventor 佘峻聪罗来堂曹涛邓少芝许宁生陈军
Owner SUN YAT SEN UNIV
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