Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Bismuth vanadate modified boron nitride nanosheet composite material and preparation method thereof

A composite material, boron nitride technology, applied in the field of inorganic environmental protection catalytic materials, to achieve the effect of increasing adsorption performance, simple process and mild reaction conditions

Inactive Publication Date: 2016-06-22
SHAANXI UNIV OF SCI & TECH
View PDF2 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a bismuth vanadate modified boron nitride nanosheet composite material, which solves the problem that the existing ones are all based on improving the transmission rate of photogenerated electrons, but by increasing the migration rate of photogenerated holes to improve the photogenerated load. The separation efficiency of flow particles is neglected

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Step 1, mix 1g of hexagonal boron nitride powder, 0.5g of sodium nitrate and 30g of concentrated sulfuric acid and place in an ice-water bath to stir evenly to obtain a suspension, slowly add 0.5g of potassium permanganate to the suspension, and continue to stir for reaction After 8 hours, add 4g of hydrogen peroxide and continue to stir for 0.5 hours. After the reaction, centrifuge the suspension at 3000rpm for 10 minutes, filter the upper suspension with microporous suction, wash with deionized water until neutral, and dry at 60°C for 12 hours to obtain nitrogen. boron nanosheets;

[0025] Step 2, dissolving 0.49g of bismuth nitrate pentahydrate in 19.6g of 10% nitric acid solution, then adding 2.48g of boron nitride nanosheets and 0.12g of sodium metavanadate to obtain a mixed solution, and ultrasonically stirring the mixed solution at 80 °C in a water bath and evaporated to dryness; then placed in a muffle furnace for 0.5 h at 300 °C to obtain a bismuth vanadate-mod...

Embodiment 2

[0027] Step 1, mix 1g of hexagonal boron nitride powder, 1g of sodium nitrate and 60g of concentrated sulfuric acid and place in an ice-water bath to stir evenly to obtain a suspension, slowly add 1g of potassium permanganate to the suspension, and continue stirring for 24 hours Add 16g of hydrogen peroxide and continue to stir for 1 hour. After the reaction, centrifuge the suspension at 3000rpm for 10 minutes. Filter the upper suspension with microporous suction, wash with deionized water until neutral, and dry at 60°C for 12 hours to obtain boron nitride nanoparticles. piece;

[0028] Step 2, dissolving 29.1g of bismuth nitrate pentahydrate in 2910g of 10% nitric acid solution, then adding 2.48g of boron nitride nanosheets and 7.32g of sodium metavanadate to obtain a mixed solution, and ultrasonically stirring the mixed solution at 100°C Evaporate to dryness in a water bath; then place it in a muffle furnace for 5 hours at 600° C. to obtain a bismuth vanadate-modified boron ...

Embodiment 3

[0030] Step 1, mix 1g of hexagonal boron nitride powder, 0.5g of sodium nitrate and 30g of concentrated sulfuric acid and place in an ice-water bath to stir evenly to obtain a suspension, slowly add 0.5g of potassium permanganate to the suspension, and continue to stir for reaction After 8 hours, add 4g of hydrogen peroxide and continue to stir for 0.5 hours. After the reaction, centrifuge the suspension at 3000rpm for 10 minutes, filter the upper suspension with microporous suction, wash with deionized water until neutral, and dry at 60°C for 12 hours to obtain nitrogen. boron nanosheets;

[0031] Step 2, dissolving 29.1g of bismuth nitrate pentahydrate in 2910g of 10% nitric acid solution, then adding 2.48g of boron nitride nanosheets and 7.32g of sodium metavanadate to obtain a mixed solution, and ultrasonically stirring the mixed solution at 100°C Evaporate to dryness in a water bath; then place it in a muffle furnace for 5 hours at 600° C. to obtain a bismuth vanadate-mod...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a bismuth vanadate modified boron nitride nanosheet composite material. According to the bismuth vanadate modified boron nitride nanosheet composite material, bismuth vanadate is loaded onto boron nitride nanosheets which serve as a catalyst carrier, wherein the mole ratio of the boron nitride nanosheets to the bismuth vanadate is 1: (0.01 to 0.6). The invention also discloses a preparation method of the bismuth vanadate modified boron nitride nanosheet composite material. The preparation method comprises the steps of dissolving bismuth nitrate pentahydrate into a 10% nitric acid solution, then, adding the boron nitride nanosheets and sodium metavanadate into the solution so as to obtain a mixture solution, carrying out ultrasonic uniform stirring on the mixture solution, and then, carrying out drying by distillation in water bath; then, carrying out treatment in a muffle furnace, thereby obtaining the bismuth vanadate modified boron nitride nanosheet composite material. According to the composite material disclosed by the invention, by using that the boron nitride nanosheets have certain electronegativity due to nitrogen vacancies of the surfaces of the boron nitride nanosheets, photon-generated holes entrained by bismuth vanadate after illumination excitation are attracted so as to promote hole transporting, and then, the transport efficiency of photon-generated carriers is increased; in addition, the large specific surface area of the boron nitride nanosheets is beneficial to the improvement on the adsorption performance of a composite system, and then, the increase of photocatalytic efficiency is facilitated.

Description

technical field [0001] The invention belongs to the technical field of inorganic environment-friendly catalytic materials, and specifically relates to a bismuth vanadate-modified boron nitride nanosheet composite material, and also relates to a preparation method of the composite material. Background technique [0002] Semiconductor photocatalytic technology has attracted increasing attention due to its high efficiency, and is used to solve environmental pollution problems and convert solar energy. The selection of high-efficiency photocatalysts is the most important aspect of semiconductor photocatalysis technology. At present, there are about 200 kinds of semiconductors that can be used for photocatalytic reactions. However, low quantum efficiency and serious photocorrosion phenomenon affect most photocatalysts. Applications. Therefore, how to improve the separation efficiency of photogenerated electrons and holes in semiconductor photocatalysts to suppress their rapid re...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B01J27/24B82Y30/00
CPCB82Y30/00B01J27/24B01J35/39
Inventor 李军奇刘辉何选盟朱振峰
Owner SHAANXI UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com