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Laser etching technology-based thin film transistor array and manufacturing method therefor

A thin-film transistor and laser etching technology, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., to achieve cost-saving, high-efficiency, and mass-production savings

Active Publication Date: 2016-06-22
FUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the large-area OTFT device array needs to print multi-layer functional layer materials during the preparation process, how to quickly and accurately separate the entire multi-layer material into a small-area, high-performance device array after printing has become a difficulty

Method used

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  • Laser etching technology-based thin film transistor array and manufacturing method therefor
  • Laser etching technology-based thin film transistor array and manufacturing method therefor
  • Laser etching technology-based thin film transistor array and manufacturing method therefor

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Embodiment Construction

[0048] The technical solution of the present invention will be specifically described below in conjunction with the accompanying drawings.

[0049] A thin film transistor array based on laser etching technology of the present invention, the thin film transistor array is a top gate bottom contact structure, the thin film transistor array includes a substrate and a device array located above the substrate, the device array includes A plurality of devices that are etched on the substrate by laser and are independent of each other, the devices include an active layer, an insulating layer, and a gate electrode from bottom to top, and the active layer is located above the substrate; the substrate In order to etch the glass / PET of the source and drain electrodes of each device, the active layer is an organic polymer film, and the insulating layer is an organic polymer film.

[0050] The substrate is PET / glass with ITO or PET / glass without ITO.

[0051] The etching method of the sour...

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Abstract

The invention relates to a laser etching technology-based thin film transistor array and manufacturing method therefor. Each thin film transistor device in the thin film transistor array orderly consists of the following parts from bottom to top: a polyethylene terephthalate (PET) or glass substrate of which source and drain electrodes are formed by subjecting ITO / silver or the like to laser etching operation, an active layer formed by an organic polymer thin film made of pentacene / P3HT / PDVT-8 / N2200 or the like, an insulating layer formed by an organic polymer thin film made of PMMA / PVP / PVA / PS or the like, and a gate electrode formed by pedot: PSS / silver / silver nano wires or the like. Each layer of the thin film transistor array manufactured via the method disclosed in the invention can be manufactured via adoption of a roll-to-roll or printing mode, only simple technologies are required, and fastness can be realized; a laser etching mode is adopted for separation of the source and drain electrodes, all devices in the device array and all function layers of each device; fast and accurate operation can be realized, any pattern can be made, obtained device channels and devices are small in size, cost can be saved, the thin film transistor array and the manufacturing method therefor are suitable for large scale production, and the thin film transistor array can be widely applied to the fields of gas sensors, active display, large scale integrated circuits, Internet of Things and the like.

Description

technical field [0001] The invention belongs to the technical field of electronic materials and devices, and in particular relates to a thin-film transistor array based on laser etching technology and a manufacturing method thereof, which are applicable to the fields of manufacturing gas sensors, active active displays, large-scale integrated circuits, and the Internet of Things. Background technique [0002] Traditionally, as the core component of flat panel display - thin film transistor, its performance directly determines the quality of the display effect. A thin film transistor is a field effect semiconductor device, including several important components such as a substrate, a semiconductor channel layer, an insulating layer, a gate, and source and drain electrodes. TFT in TFT-LCD is generally made of large-scale semiconductor integrated circuits on non-single crystal substrates such as glass or plastic, and various films necessary for manufacturing circuits are formed...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/28H01L51/05H01L21/77H01L51/40
CPCH10K19/10H10K10/464
Inventor 陈惠鹏张国成杨辉煌胡利勤蓝淑琼郭太良
Owner FUZHOU UNIV