Magnetoelectric effect based magnetoelectric memory element of ferroelectric/ferromagnetic composite thin film

Abstract

Disclosed is a magnetoelectric effect based magnetoelectric memory element of a ferroelectric/ferromagnetic composite thin film. Ferroelectric and ferromagnetic thin films are deposited on a Pt/Ti/SiO<2>/Si composite substrate in sequence to prepare a laminated structure; the chemical structural formula of the ferroelectric thin film with a piezoelectric effect is 0.5Ba(Zr<0.2>Ti<0.8>) O<3>-0.5(Ba<0.3>Ca<0.7>)TiO<3>(BZT-BCT); the thin film with a magnetostrictive effect is Fe<0.7>Ga<0.3>; the preparation method comprises the steps of preparing the ferroelectric ceramic thin film through radio frequency magnetron sputtering, and preparing the ferromagnetic thin film by direct current magnetron sputtering. The magnetoelectric effect based magnetoelectric memory element has the advantages as follows: the memory element is nonvolatile, capable of keeping the polarized and magnetized states under externally-applied voltage, and low in power consumption; the memory unit has good ferroelectric, piezoelectric and ferromagnetic performances at the room temperature; and the maximum electric field control magnetic resistance effect 6% is obtained when the externally applied bias voltage is 20V.

Description

technical field [0001] The invention particularly relates to a ferroelectric / ferromagnetic composite film magnetoelectric storage element based on the magnetoelectric effect and a preparation method thereof. Background technique [0002] With the rapid development of information technology, higher and higher requirements are put forward for information storage technology. The research and development of high-performance storage devices with high storage density, low read-write energy consumption, and high read-write speed has become one of the most active fields in the current scientific research frontier and information technology. Among the traditional information recording methods, magnetic recording has become the mainstream of modern information storage technology due to its advantages of being easy to read; however, the limitation of its storage density and the difficulty of writing have always been the problems faced by magnetic storage technology. In contrast, ferro...

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Problems solved by technology

[0004] The magnetoelectric storage element of the ferroelectric/ferromagnetic composite thin film based on the magnetoelectric effect that the present invention relates to, selects Fe 0.7 Ga 0.3 Alloy is used as ferromagnetic layer, BZT-BCT is used as fe

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