Wide and high-frequency and low-noise amplifier with self-bias band gap
A low-noise amplifier and low-noise amplification technology, applied in the field of low-noise amplifier circuits, can solve problems such as current mismatch and unsatisfactory DC bias, so as to avoid the deterioration of noise performance, avoid bias mismatch, and avoid parasitic resistance Effect
Active Publication Date: 2016-06-29
西安电子科技大学重庆集成电路创新研究院
View PDF5 Cites 7 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0015] The invention discloses a bandgap self-biased wide-frequency and high-frequency low-noise amplifier, which aims to solve the current mismatch problem of the source degeneracy structure of the prior art low-noise amplifier and avoid the influence of the unideal DC bias
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0038] The new circuit structure proposed by the invention is to jointly design the bandgap reference circuit and the low-noise amplifying circuit, share the high energy consumption part, and realize a radio frequency receiving circuit with reduced energy consumption.
[0039] image 3 The relationship between the two parts of the circuit is shown (note: the bandgap circuit and the low-noise amplifier are separated in the figure in order to illustrate the relationship between them. In the specific circuit structure of the present invention, the two are integrally realized). Both circuit parts are supplied with voltage by the power supply VDD, and the bandgap reference can generate a bandgap voltage VB with little correlation with influencing factors by itself, and this voltage enters the LNA for biasing. The input signal Vin is received by the off-chip antenna, enters the low-noise amplifier for amplification, and generates a signal of A·Vin, where A is the gain of the amplifi...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a wide and high-frequency and low-noise amplifier with a self-bias band gap, and aims to solve the current mismatching problem of a source degenerate structure of the low-noise amplifier in the prior art and avoid influence due to non-ideal direct-current bias. The wide and high-frequency and low-noise amplifier with the self-bias band gap comprises a low-noise amplification circuit and a band gap reference circuit, wherein the current magnitude of the band gap reference circuit is controlled by a numerical control unit; the current output by the band gap reference circuit is subjected to image multiplied magnification and used as the bias current of the low-noise amplification circuit; the low-noise amplification circuit is in the form of a common-source and common-gate structure; a signal is input through a In port and connected to the base of a transistor Q8 through an on-chip inductor L1; a junction between the In port and the inductor L1 leads out a branch, and the branch is in series connection with capacitor C4 to be grounded; the signal is subjected to voltage-current feedback through the transistor Q8, amplified through the collector output end of a transistor Q9, and output through a buffer unit Buf; and thus, the low-noise amplification function of the signal is completed.
Description
technical field [0001] The invention relates to a low noise amplifier circuit. Background technique [0002] As the first circuit module of the radio frequency receiver, the low noise amplifier (LNA, low noise amplifier) has the function of amplifying the effective signal (signal) while suppressing the noise (noise), and the bandgap reference (Bandgap) circuit is a low noise amplifier The circuit provides voltage or current biasing. The working mechanism of the whole circuit is that the bandgap reference circuit generates a reference voltage / current with little correlation with temperature, process and power supply voltage, and adds the signal to the low noise amplifier; under the bias of the bandgap voltage, the low The static operating point of the noise amplifier is determined, that is, the required input matching (S11, inputmatch), signal gain (S21, powergain) and small noise figure (NF, noisefigure) are ensured, and the signal can be compared at this time The small ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/26H03F1/30H03F3/19
CPCH03F1/26H03F1/30H03F3/19
Inventor 李振荣庄奕琪井凯曾其发
Owner 西安电子科技大学重庆集成电路创新研究院