Method for preparing black silicon on doped film layer

Abstract

The invention relates to the field of a semiconductor photoelectronic material, is applied to the preparation of doped black silicon, and specifically discloses a method for preparing a doped black silicon microstructure through a femtosecond laser radiation method after the doped film layer is prepared. According to the preparation method, a target material fitting mode and a magnetron sputtering method are adopted to deposit a silicon-doped film layer on the surface of a clean silicon substrate; then a surface microstructure is prepared through femtosecond laser radiation; the surface microstructure is thermally annealed under an atmosphere environment to obtain the doped black silicon material, wherein the doped black silicon material has a certain high absorption characteristic on light with the wavebands of 400-2,400nm; the absorption rate of the doped black silicon material on the visible light wavebands of 400-1,100nm can reach 95%, and the absorption rate of the doped black silicon material on the near infrared wavebands of 1,100-2,400nm can reach 90%, so that technological foundation for expanding the application of the black silicon material is established. Compared with the prior art, the types of the doped elements are enriched due to the solid film layer doping mode; and meanwhile, the doping concentration is improved, the doping cost is lowered, the process steps are reduced, and the preparation efficiency is improved.

Description

Technical field [0001] The invention relates to the field of semiconductor optoelectronic materials and is applied to the preparation of doped black silicon. Specifically, after preparing the doped film layer, the doped black silicon microstructure is prepared by femtosecond laser irradiation. Background technique [0002] As an important semiconductor material with low cost and easy integration, silicon material occupies a leading position in the field of microelectronics and optoelectronics. Devices and products made from it have been widely used in fields such as computers, communications, information technology, and energy technology. . However, due to its own band gap restriction, its application in optoelectronic devices is limited. Specifically, because crystalline silicon does not absorb light with a wavelength greater than 1100nm (the absorption coefficient is less than 100cm -1 ), resulting in low response rate of infrared detectors and low conversion efficiency of ph...

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Problems solved by technology

However, the wet etching steps are cumbersome, the obtained morphology is not accurate, the size is small, and it will produce toxic waste gas and waste liquid.

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