α-irradiation scintillator detector based on silicon carbide pin diode structure
A PIN diode and irradiation detector technology, applied in the field of alpha ray scintillator detectors, can solve problems such as unfavorable integration, large scintillator volume, etc., to reduce the influence of electrical performance, strong anti-irradiation ability, and improve absorption rate Effect
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Embodiment 1
[0045] Example 1: Fabricate an alpha radiation detector with a silver-doped zinc sulfide scintillator buried at a depth of 3.0 μm.
[0046] Step 1, select the doping concentration as 5.0×10 19 cm -3 The N-type 4H-SiC substrate is used as the substrate 7. After cleaning, the low-pressure hot-wall chemical vapor deposition method LPCVD is used under the conditions of the epitaxial temperature of 1570 ° C, the pressure of 100 mbar, and the growth gas of C3H8, SiH4 and H2. The epitaxial growth thickness on the substrate is 1.0 μm, and the doping concentration is 1.0×10 18 cm -3 N-type buffer layer 6 of 4H-SiC, such as figure 2 as shown in a;
[0047] The second step is to use the low-pressure hot-wall chemical vapor deposition method LPCVD, under the conditions of the epitaxial temperature of 1570 ° C, the pressure of 100 mbar, and the growth gas of C3H8, SiH4 and H2, on the N-type buffer layer 6, an epitaxial layer with a thickness of 10.0 μm, the doping concentration is 1....
Embodiment 2
[0054] Example 2: Fabricate an alpha radiation detector with a silver-doped zinc sulfide scintillator buried at a depth of 4.0 μm.
[0055] Step 1, epitaxial N-type buffer layer 6, such as figure 2 as shown in a;
[0056] The selected doping concentration is 1.0×10 20 cm -3 The N-type 4H-SiC substrate was used as the substrate 7. After cleaning, it was epitaxially grown on the substrate with a thickness of 1.5 μm and a doping concentration of 5.0×10 18 cm -3 N-type buffer layer 6 of 4H-SiC;
[0057] Its epitaxy process conditions: the temperature is 1570°C, the pressure is 100mbar, and the growth gas is C 3 h 8 、SiH 4 and H 2 ;
[0058] Step 2, epitaxial intrinsic absorption layer 5, such as figure 2 as shown in b.
[0059] Using the low-pressure hot-wall chemical vapor deposition method LPCVD, an epitaxial layer with a thickness of 11.0 μm on the N-type buffer layer 6 and a doping concentration of 1.0×10 16 cm -3 The intrinsic absorbing layer 5.
[0060] Its e...
Embodiment 3
[0073] Example 3: Making an alpha radiation detector with a silver-doped zinc sulfide scintillator buried at a depth of 5.0 μm;
[0074] Step A, N-type buffer layer.
[0075] The selected doping concentration is 5.0×10 20 cm -3 The N-type 4H-SiC substrate is used as the substrate 7 and cleaned;
[0076] Using the low-pressure hot-wall chemical vapor deposition method LPCVD, under the conditions of the epitaxial temperature of 1570 ° C, the pressure of 100 mbar, and the growth gas of C3H8, SiH4 and H2, the epitaxial growth thickness is 2.0 μm on the substrate, and the doping concentration is 1.0× 10 19 cm -3 N-type buffer layer 6 of 4H-SiC, such as figure 2 as shown in a.
[0077] Step B, intrinsic absorbing layer.
[0078] Using low-pressure hot-wall chemical vapor deposition method LPCVD, the epitaxial temperature is 1570 ° C, the pressure is 100 mbar, and the growth gas is C 3 h 8 、SiH 4 and H 2 Under the conditions of the epitaxial layer on the N-type buffer lay...
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