Beta-Gallium oxide nanowire array film and preparation method thereof

A nanowire array, gallium oxide technology, applied in the field of material science, can solve the problems of difficult to meet practical applications, high dark current of optoelectronic devices, long response time, etc., to achieve the effect of improving optoelectronic performance, short time required, and simple equipment

Inactive Publication Date: 2016-08-03
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Abstract
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  • Claims
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Problems solved by technology

[0003] Today's mainstream β-gallium oxide is mainly divided into bulk materials, thin film materials and nanostructures, but the preparation of β-gallium oxide bulk materials, especially the preparation of β-gallium oxide single crystal materials generally requires high costs; and the use of Photoelectric devices made of β-gallium oxide thin film materials generally have high dark current and long response time, which are difficult to meet the needs of practical applications; some studies have found that thin film materials formed by β-gallium oxide nanostructures have simple preparation processes and low cost. And the photoelectric performance of the phot

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  • Beta-Gallium oxide nanowire array film and preparation method thereof
  • Beta-Gallium oxide nanowire array film and preparation method thereof
  • Beta-Gallium oxide nanowire array film and preparation method thereof

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[0035] The embodiment of the present application provides a method for preparing a β-gallium oxide nanowire array film, such as figure 1 shown, including:

[0036] S101: spin-coating molten gallium metal on the surface of the substrate;

[0037] S102: Baking the substrate coated with metal gallium at a preset temperature for a first preset time, the range of the preset temperature is 500-1200°C, including endpoint values, and the first preset time The value range of is 10-200min, including the endpoint value;

[0038] S103: cooling the substrate and firing the obtained product to obtain a β-gallium oxide nanowire array thin film.

[0039] On the basis of the foregoing embodiments, in one embodiment of the present application, said spin-coating molten gallium metal on the surface of the substrate includes:

[0040] S1011: heating and melting the metal gallium with a preset quality;

[0041] S1012: coating molten gallium metal on the surface of the substrate;

[0042] S1013...

Embodiment 1

[0055] In this embodiment, the specific process of the method includes:

[0056] S201: heat and melt 200mg of gallium metal and apply it on the c-plane sapphire substrate;

[0057] S202: placing the c-plane sapphire substrate coated with metal gallium on a spin coater, and rotating at a speed of 5000rpm for 20s;

[0058] S203: Baking the spin-coated c-plane sapphire substrate in air or oxygen at a high temperature of 1000° C. for 80 minutes and then cooling to obtain the β-gallium oxide nanowire array film.

[0059] Next, SEM scanning and XRD testing were performed on the β-gallium oxide nanowire array thin film obtained in Example 1. image 3 It is the SEM photo of the β-gallium oxide nanowire array film obtained in Example 1 and the line scan spectrum of the element distribution at the corresponding position. It can be seen from the figure that the obtained β-gallium oxide nanowire array film has a multilayer structure; From the c-plane sapphire substrate (the main compone...

Embodiment 2

[0063] In this embodiment, in order to examine the influence of the quality of adding metal gallium (ie the preset quality) on the obtained β-gallium oxide nanowire array film, except that the preset quality is different from Example 1, other reactions Conditions were kept the same as in Example 1. That is, the mass of gallium metal in step S201 is set to 10 mg, 100 mg, 300 mg, 500 mg and 1000 mg respectively for experiments.

[0064] The experimental results show that when the preset masses are 10mg, 100mg, 300mg, 500mg and 1000mg respectively, the thicknesses of the metal gallium layer 20 of the prepared β-gallium oxide nanowire array film are 0 μm, 2 μm, 14 μm and 15 μm respectively and 15 μm. The reason may be that when the amount of metal gallium added is too small, a small amount of metal gallium is completely oxidized under high temperature conditions, and before the formation of the β-gallium oxide film 30, the metal gallium has been completely oxidized, resulting in ...

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Abstract

The invention discloses a Beta-Gallium oxide nanowire array film and a preparation method thereof. The preparation method of the Beta-Gallium oxide nanowire array film comprises the following steps: spin-coating the surface of a substrate with melted metal gallium; roasting the substrate of which the surface is coated with metal gallium for a first preset time at a preset temperature, wherein the range of the preset temperature is 500-1200 DEG C, and the range of the first preset time is 10-200min; and cooling the substrate and roasting the product to get a Beta-Gallium oxide nanowire array film. The preparation method of the Beta-Gallium oxide nanowire array film has the advantages of simple equipment adopted, simple preparation process, and short preparation time. More importantly, the Beta-Gallium oxide nanowires in the Beta-Gallium oxide nanowire array film are of uniform length and are arranged in order, which provides prerequisites for the improvement of the photoelectric performance of photoelectric devices prepared with the Beta-Gallium oxide nanowire array film.

Description

technical field [0001] The present application relates to the technical field of material science, and more specifically, relates to a β-gallium oxide nanowire array film and a preparation method thereof. Background technique [0002] β-Gallium oxide is an important functional material with broad application prospects. Its forbidden band width is 4.9eV and the corresponding absorption wavelength is 253nm. It is a natural semiconductor material that can be used to prepare solar-blind ultraviolet detection devices. [0003] Today's mainstream β-gallium oxide is mainly divided into bulk materials, thin film materials and nanostructures, but the preparation of β-gallium oxide bulk materials, especially the preparation of β-gallium oxide single crystal materials generally requires high costs; and the use of Photoelectric devices made of β-gallium oxide thin film materials generally have high dark current and long response time, which are difficult to meet the needs of practical a...

Claims

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Application Information

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IPC IPC(8): H01L31/18B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01L31/18Y02P70/50
Inventor 陈星刘可为李炳辉张振中王潇杨佳霖申德振
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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