A high-temperature heating device applied to a small mocvd system

Abstract

The invention provides a high-temperature heating device applied to a miniature MOCVD system. The device comprises a heating element, an electric stove plate and an electrode connecting wire, wherein a cover plate is arranged on the heating element; a plurality of holes are preserved in the bottom of the electric stove plate; the electrode connecting wire is connected with the heating element and is provided with a ceramic tube for protection; the outer part of the heating device is closed by a stainless steel enclosure; a thermal baffle is arranged under the electric stove plate; a plurality of holes corresponding to those in the bottom of the electric stove plate are preserved in the thermal baffle; a stainless steel tube is arranged on the side face of the enclosure above the thermal baffle, and a protective gas can be introduced into the stainless steel tube; and nitrogen and other protective gases can be introduced into the upper part of the heating element through the stainless steel tube to achieve double protection on the heating element. The high-temperature heating device can realize high-temperature heating of the miniature MOCVD system, can be used for effectively preventing oxygen oxidization and corrosion on the heating element under a high-temperature condition so as to greatly prolong the service life of the heating element, can be used for shielding and limiting various releases of the heating element under the high-temperature condition, and is beneficial to acquisition of deposited film materials with excellent performance.

Description

technical field [0001] The invention relates to thin film deposition technology, in particular to a high-temperature heating device applied to a small-scale MOCVD system. Background technique [0002] Infrared radiation heating is to pass a large current through a heating element with a relatively high resistance to generate a large amount of heat, and then mainly conduct heat transfer to graphite or metal bases in the form of radiation. It is a part of industrial scale production and scientific experimental research. It is a very important heating method, but the actual heating effect varies greatly depending on the size, structure and use environment of the heating equipment. [0003] For tube furnaces, the furnace body is generally designed with a certain thickness of insulation layer and reflective layer, and the furnace tube is wrapped by a heating wire, so that the heat generated by the heating wire can be concentrated inside the furnace tube, and the process temperatu...

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Problems solved by technology

[0004] Different films have very different requirements for deposition process and equipment. For MOCVD systems, the cooling design of the cavity wall is generally required. Due to the need for vacuum, the space of the cavity is generally limited, so the size of the heating equipment will also vary. Restricted, coupled with mechanical requirements such as substrate rotation, the deposition sample is generally placed on top of the heating equipment, and there is a certain distance from the heating equipment. The above factors cause the difference between the process temperature and the temperature of the heating element in the MOCVD system Very large, multiple theoretical calculations and measured data show that the temperature of the heating element corresponding to the process temperature of 1100°C may reach 1700-2000°C

For some semiconductor materials, in order to obtain excellent material quality, in many cases, the substrate needs to be heated to about 1100 degrees, accompanied by oxidizing gases such as oxygen, chlorine, and carbon dioxide. Working under such high temperature conditions, the heating element It is easily oxidized or corroded by gas, which seriously affects the life and stability of heating equipment; in addition, under such high temperature conditions, the heating element itself is already in a hot state, which will release impurities or other unknown substances, which will affect the growth of the material. bring adverse effects

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