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Single-walled carbon nanotube as well as selective extraction method and application thereof

A technology of single-walled carbon nanotubes and an extraction method, which is applied in the directions of single-walled carbon nanotubes, carbon nanotubes, nanocarbons, etc., to achieve the effects of concentrated tube diameter range, simple and efficient method, and high application value

Active Publication Date: 2016-08-24
苏州希印纳米科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the diameter of s-SWCNTs most suitable for semiconductor electronic devices is generally in the range of 1.1-1.3nm. At present, there are relatively few technologies that can separate SWCNTs in this diameter range with high purity, especially to obtain high-purity SWCNTs with this The technology of monochiral single-walled carbon nanotubes in the diameter range has not been reported yet

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  • Single-walled carbon nanotube as well as selective extraction method and application thereof
  • Single-walled carbon nanotube as well as selective extraction method and application thereof
  • Single-walled carbon nanotube as well as selective extraction method and application thereof

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preparation example Construction

[0045] The preparation method of the single-walled carbon nanotube raw material can be a chemical vapor deposition method or an arc discharge method or a plasma discharge method or a laser ablation method, and the single-walled carbon nanotube raw material prepared by the above method is mixed with a metallic single-walled carbon nanotube Carbon nanotubes (m-SWCNTs) and semiconducting single-walled carbon nanotubes (s-SWCNTs), the raw materials of single-walled carbon nanotubes have a tube diameter ranging from 0.6 to 1.8 nm. .

[0046] In the step "in an organic solvent, the raw material of single-walled carbon nanotubes and the conjugated polymer are formed into a dispersion liquid through a dispersion technique", the dispersion technique includes at least one of methods such as ultrasound, ball milling, shearing, emulsification, and vibration .

[0047]In one embodiment of the present invention, the single-walled carbon nanotube raw material and the conjugated polymer are ...

Embodiment 1

[0058] Embodiment 1, preparation of single-walled carbon nanotubes with a diameter distribution of 1.1-1.3 nanometers

[0059] 50 mg of the conjugated polymer with the structure shown in formula I and 50 mg of single-walled carbon nanotubes prepared by the plasma discharge method were dissolved in a mixed solvent of 100 mL of toluene and 5 mL of dioxane. Disperse by high-speed shearing for 30 minutes, and then centrifuge at a speed of 50,000 g for 30 minutes. The supernatant obtained is the obtained single-walled carbon nanotube solution in a specific diameter range. Using UV-Vis-NIR absorption spectroscopy (see figure 2 ) test, and the spectral results show that the separated supernatant contains multiple single-walled carbon nanotubes with a diameter range of 1.1-1.3 nanometers.

[0060]

Embodiment 2

[0061] Example 2, preparation of (13,3) type monochiral single-walled carbon nanotubes

[0062] 50mg of conjugated polymers with structure shown in formula II and 50mg of single-walled carbon nanotubes prepared by chemical vapor phase growth were dissolved in 100mL of xylene solvent. Disperse by ultrasound for 1 hour, and then centrifuge at a speed of 30,000 g for 30 minutes. The supernatant was taken and subjected to ultra-high speed centrifugation at a centrifugation speed of 500,000 g for 2 hours, and the supernatant was obtained as the obtained single-walled carbon nanotube solution. Using ultraviolet-visible-near-infrared absorption spectroscopy (UV-Vis-NIR) (see image 3 ), two-dimensional fluorescence spectroscopy (PLE) (see Figure 4 ) test, combined with the results of the two spectra showed that the separated supernatant mainly contained (13,3) type monochiral single-walled carbon nanotubes, and the content of the chiral carbon nanotubes was >90%.

[0063]

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Abstract

The invention discloses a single-walled carbon nanotube with a specific tube diameter as well as a selective extraction method and an application of the single-walled carbon nanotube. The extraction method comprises steps as follows: a single-walled carbon nanotube raw material and a conjugated polymer in an organic solvent are processed with a dispersion technology, and a dispersing liquid is formed, wherein a main chain of the conjugated polymer has a distortion structure; the dispersing liquid is subjected to centrifugal treatment, and a supernatant liquid is taken; the high-purity single-walled carbon nanotube with the tube diameter range of 1.1-1.3 nm is obtained. Compared with the prior art, the single-walled carbon nanotube with the tube diameter range of 1.1-1.3 nm is selectively extracted from the raw material by means of the conjugated polymer having the main chain with the distortion structure, the method is simple and efficient, and large-scale production is facilitated; furthermore, the product is high in purity, has a concentrated tube diameter range, shows excellent performance in the aspect of micro-nanometer electron devices and has greatly high application value; with the adoption of the extraction method, the high-purity single chiral single-walled carbon nanotube can be obtained, and better performance is achieved.

Description

technical field [0001] The invention belongs to the technical field of carbon nanotubes, and relates to a single-walled carbon nanotube and its selective extraction method and application, especially a single-walled carbon nanotube with a specific diameter, its selective extraction method, and a single-walled carbon nanotube with the Single-walled carbon nanotubes for micro- and nanoscale electronic devices. Background technique [0002] Single-walled carbon nanotubes (SWCNTs) have a unique one-dimensional nanostructure and are considered to be the most promising materials in the nanoscale field. In particular, semiconducting single-walled carbon nanotubes (s-SWCNTs) have intrinsic carrier mobility as high as 70,000 cm2V-1s-1, and can realize bipolar transport of holes and electrons without doping, so in integrated Applications in circuits are expected to be high, and they are regarded as semiconductor materials in the post-Moore era. [0003] The current methods for synth...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/02B82Y40/00B81B1/00
CPCB81B1/00B81B2201/02C01B2202/02C01B2202/20C01B2202/30C01B2202/36
Inventor 邱松李红波韩杰金赫华
Owner 苏州希印纳米科技有限公司