Preparation technology of silicon carbide-based castable

A preparation process, silicon carbide technology, applied in the field of refractory materials, can solve problems such as insufficient comprehensiveness, and achieve the effect of reducing temperature

Inactive Publication Date: 2016-08-24
任海涛
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there have been some studies on the application of silica sol as a binder in refractory materials, but it is not comprehensive enough.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] The preparation process of the silicon carbide castable of embodiment 1 comprises the following steps:

[0017] S1: Prepare raw materials of silicon carbide particles, silicon carbide powder, α-Al2O3 powder, binder, water reducing agent and curing agent;

[0018] S2: Stir and mix the raw materials in S1, put the mixture into a mold and vibrate to shape it, let it stand for 1 day, and demould it to obtain a molded casting;

[0019] S3: drying the molded castings obtained in S2 in an oven at 110-120°C for 24-36 hours;

[0020] S4: place the product obtained in S3 at 1000-1200°C for 3 hours,

[0021] The mass percentage of silicon carbide particles in the S1 raw material is 30-35%, the mass percentage of silicon carbide micropowder is 30-35%, and the α-Al 2 o 3 The mass percentage of the fine powder is 10-15%, and the mass percentage of the binder is 10-12%.

[0022] Wherein, the binding agent is silica sol.

[0023] Wherein, the particle size of silicon carbide parti...

Embodiment 2

[0025] The preparation technology of the silicon carbide castable of embodiment 2 comprises the following steps:

[0026] S1: Prepare raw materials of silicon carbide particles, silicon carbide powder, α-Al2O3 powder, binder, water reducing agent and curing agent;

[0027] S2: Stir and mix the raw materials in S1, put the mixture into a mold and vibrate to shape it, let it stand for 1 day, and demould it to obtain a molded casting;

[0028] S3: drying the molded castings obtained in S2 in an oven at 110-120°C for 24-36 hours;

[0029] S4: place the product obtained in S3 at 1000-1200°C for 3 hours,

[0030] The mass percentage of silicon carbide particles in the S1 raw material is 30-35%, the mass percentage of silicon carbide micropowder is 30-35%, and the α-Al 2 o 3 The mass percentage of the fine powder is 10-15%, and the mass percentage of the binder is 10-12%.

[0031] Wherein, the binding agent is silica sol.

[0032] Wherein, the particle size of silicon carbide pa...

Embodiment 3

[0034] The preparation process of the silicon carbide castable of embodiment 3 comprises the following steps:

[0035] S1: Prepare raw materials of silicon carbide particles, silicon carbide powder, α-Al2O3 powder, binder, water reducing agent and curing agent;

[0036] S2: Stir and mix the raw materials in S1, put the mixture into a mold and vibrate to shape it, let it stand for 1 day, and demould it to obtain a molded casting;

[0037] S3: drying the molded castings obtained in S2 in an oven at 110-120°C for 24-36 hours;

[0038] S4: place the product obtained in S3 at 1000-1200°C for 3 hours,

[0039] The mass percentage of silicon carbide particles in the S1 raw material is 30-35%, the mass percentage of silicon carbide micropowder is 30-35%, and the α-Al 2 o 3 The mass percentage of the fine powder is 10-15%, and the mass percentage of the binder is 10-12%.

[0040] Wherein, the binding agent is silica sol.

[0041] Wherein, the particle size of silicon carbide parti...

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Abstract

The invention discloses a preparation technology of silicon carbide-based castable. The preparation technology comprises the steps such as raw material preparation, mould pouring, drying and heating curing treatment. By combining silica sol with silicon carbide castable, the erosion of melts on the furnace bottom and hearth and the temperature change can be adapted to relatively well, and the harsh requirements on the working environment during in-furnace service are effectively met; and the material has relatively good thermal conductivity, the temperature around and inside the material can be guided out in time through a furnace shell cooling wall, thus the ambient temperature around the material is effectively reduced, and relatively stable melts and even a molten iron layer are formed in a molten iron leakage channel formed by burn-through of the furnace bottom.

Description

technical field [0001] The invention relates to the field of refractory materials, in particular to a preparation process of a silicon carbide castable. Background technique [0002] Silicon carbide (SiC) is a covalently bonded compound with strong interatomic bonding, high melting point, high hardness, low expansion, high strength, high thermal conductivity, thermal shock resistance, and strong chemical stability It is a good raw material for refractory materials. Clay-bonded silicon carbide, oxide-bonded silicon carbide, nitride-bonded silicon carbide, recrystallized silicon carbide, reaction sintered silicon-infiltrated silicon carbide and other products produced from silicon carbide as raw materials and amorphous refractories are widely used in metallurgical industry blast furnaces, Zinc smelting furnace, kiln furniture in ceramic industry, etc. With people's emphasis on energy and production costs, clay-bonded and low-grade mullite-bonded SiC products are gradually el...

Claims

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Application Information

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IPC IPC(8): C04B35/66C04B35/565
Inventor 任海涛
Owner 任海涛
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