Spintronics device based on metamaterial

A technology of spintronics and metamaterials, applied in electrical components, semiconductor devices, circuits, etc., can solve problems such as high frequency of spintronics devices, integration and wireless obstacles

Inactive Publication Date: 2016-08-24
FUDAN UNIV
View PDF1 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current spin rectification devices are mainly concentrated in the low-frequency or near-DC range, and the research above high-frequency (GHz) is obviously lagging behind, and the high-frequency range is generally only through the wired transmissio

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Spintronics device based on metamaterial
  • Spintronics device based on metamaterial
  • Spintronics device based on metamaterial

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035]The present invention will be further described below in conjunction with the accompanying drawings and embodiments, which are not intended to limit the claims of the present invention.

[0036] figure 1 It is the metamaterial-based spin rectification device of the present invention, specifically a three-layer structure: the upper layer structure 100 is composed of periodically arranged back-to-back split resonant rings SRRs101 and 102, and the middle strip 103 of the SRRs will generate an extremely strong current during resonance , which provides a very strong magnetic field for the metal ferromagnetic material; the middle is composed of a medium 110, which is mainly used as the isolation between the substrate of the upper structure and the upper and lower layers, and the microcavity of the resonator; the lower layer is Metal strips 120 and metal magnetic materials 121 are compounded. The width of the metal strips gradually narrows 122. It is the narrowest right below ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention belongs to the technical field of spintronics, and particularly relates to a spintronics device based on a metamaterial. The spintronics device disclosed by the invention is a composite metamaterial system formed by combining a magnetic metal material and a non-magnetic metal material; the upper layer of the spintronics device is of a metal structure consisting of two similar split-ring resonator structures back to back, metal structural units are periodically attached onto an insulating substrate, and the dimensions of the upper layer are in the sub-wavelength magnitude; and the lower layer of the spintronics device consists of periodical metal strips and strips with gradually changing widths, and a magnetic film is arranged at the narrowest place of each metal strip. The structural resonance of the non-magnetic metal material can concentrate electromagnetic waves inside the structure at maximum efficiency, namely a perfect absorption mode is realized; and moreover, the electromagnetic waves are absorbed by using a spinning rectification effect generated by electron spin motion and nonlinear coupling of charge current in a ferromagnetic material, so that a direct current voltage signal is generated. Therefore, the magnetic metal material is placed at the position with strongest electromagnetic field and current in the system, the electromagnetic waves generated by structural resonance are absorbed, and available direct current voltage is generated.

Description

technical field [0001] The invention belongs to the technical field of spin electronics, and in particular relates to a spin electronics device based on metamaterials. Background technique [0002] Metamaterials [1] are electromagnetic metamaterials with artificially designed resonant structures as the basic unit (meta-atom) arranged in a lattice-like manner to form extraordinary physical properties that natural materials do not have, such as perfect absorption [2], negative Refraction, stealth, artificial magnetic response [3], electromagnetically induced transparency (EIT), ENZ (epsilon-near-zero) materials, etc. Metamaterials have a strong ability to control electromagnetic fields, but for absorbed or amplified electromagnetic fields, they are basically dissipated in the form of heat. Although perfect absorption is achieved, the energy of the collected electromagnetic waves is not effectively used. . [0003] We know that electrons have another degree of freedom besides...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L29/66
CPCH01L29/66984
Inventor 安正华勾鹏
Owner FUDAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap