Dynamic and static current-sharing and multi-chip paralleled power module

Abstract

The invention provides a dynamic and static current-sharing and multi-chip paralleled power module. The dynamic and static current-sharing and multi-chip paralleled power module comprises ceramic copper-clad plates and multiple power chips; various power chips are arranged on the ceramic copper-clad plates having the same structures in one-to-one correspondence; and the ceramic copper-clad plates are arranged in the circumferential direction in an axially symmetrical manner. According to the dynamic and static current-sharing and multi-chip paralleled power module disclosed by the invention, the symmetry of electrical parameters is realized through circular physical symmetrical structure; due to the optimized layout design, various branch parasitic parameters of the multi-chip paralleled power module are minimized; furthermore, distribution of various branch parasitic parameters is basically same; the non-uniform current distribution problem of the multi-chip paralleled module is solved easily; the multi-chip module design method disclosed by the invention can be used for realizing dynamic current-sharing and static current-sharing of the power module better; the capacity utilization rate of the power module is increased; and furthermore, the dynamic and static current-sharing and multi-chip paralleled power module is adaptive to a fast switching process and a high-frequency power electronic converter by reducing the side effects of a parasitic inductance.

Description

technical field [0001] The invention relates to the field of power electronics, in particular to a dynamic and static current sharing multi-chip parallel power module. Background technique [0002] In recent years, power electronic devices have been widely used in new energy power generation systems, motor drives and electric drives. As the industry puts forward higher and higher demands on power electronics, the switching frequency of power electronic devices is getting higher and higher to increase power density, but the switching speed of power modules based on Si (silicon) devices has basically reached the physical limit. Therefore, The industry has begun to turn its attention to wide bandgap devices such as SiC (silicon carbide) and GaN (gallium nitride). Compared with Si devices, the electrical and thermal characteristics of wide bandgap materials are more excellent. SiC MOSFET (metal oxide semiconductor field effect transistor) has higher thermal conductivity, blocki...

AI Technical Summary

Problems solved by technology

In order to solve this problem, some studies have used the method of source inductance compensation to reduce the inhomogeneity of parasitic parameters between different current branches and improve the current sharing effect of the module. However, this method also introduces additional parasitic inductance. may result in increased switching losses

In view of the shortcomings of existing layouts, some technologies have proposed some new DBC layout methods to reduce the imbalance between parasitic parameters, but these new layouts cannot guarantee that each branch is completely symmetrical, so It is still inevitable that there will be current sharing problems

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