Unlock instant, AI-driven research and patent intelligence for your innovation.

A processing method for light-trapping microstructure on polysilicon surface

A processing method and polysilicon technology, applied in sustainable manufacturing/processing, electrical components, climate sustainability, etc., can solve the problems of complex process, cumbersome process, surface damage, etc., and achieve the effect of good adaptability and simple process

Active Publication Date: 2017-12-29
HANGZHOU DIANZI UNIV
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The laser grooving method is easy to cause damage to the surface during etching and introduce some impurities. The surface damage layer needs to be removed by chemical treatment, and the process is cumbersome.
Chemical grooving, which does not produce the kind of tapered structures that anisotropic etching does
Reactive ion etching, this method is a maskless etching process, the reflectivity of the textured surface formed is particularly low, but the problem is that the silicon surface is seriously damaged and the process is complicated
This processing method is controlled by the limitation of the distribution form of the sound field, and has certain limitations.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A processing method for light-trapping microstructure on polysilicon surface
  • A processing method for light-trapping microstructure on polysilicon surface
  • A processing method for light-trapping microstructure on polysilicon surface

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] The processing method of the light-trapping microstructure on the surface of polysilicon in this embodiment is specifically as follows: select an n-type polysilicon wafer with a size of 2cm*2cm, place it in an etching solution for chemical etching, and the etching solution is an HF solution with a mass concentration of 39%. , HNO with a mass concentration of 67% 3 solution and a mass concentration of 76% H 2 SO 4 The mixing of the solution, and the HF solution and HNO in the corrosion solution 3 solution and H 2 SO 4 The volume ratio of the solution is 0.8:2:8.1. While performing chemical etching at room temperature, combined with Figure 5 A multi-frequency ultrasonic phased array is shown acting in a chemical corrosion reaction. Since the order of magnitude of the polysilicon light-trapping microstructure to be processed is at the micron level, that is, the reaction between the particles in the chemical corrosion is at the micron level, and the acoustic radiatio...

Embodiment 2

[0035] The difference between this embodiment and Embodiment 1 is that the corrosion solution is a HF solution with a mass concentration of 41%, and a HNO solution with a mass concentration of 68%. 3 solution and a mass concentration of 74% H 2 SO 4 The mixing of the solution, and the HF solution and HNO in the corrosion solution 3 solution and H 2 SO 4 The volume ratio of the solution is 1.2:1.7:7.9, and refer to Example 1 for other methods.

Embodiment 3

[0037] The difference between this embodiment and Embodiment 1 is that the corrosion solution is a HF solution with a mass concentration of 40%, and a HNO solution with a mass concentration of 69%. 3 solution and a mass concentration of 75% H 2 SO 4 The mixing of the solution, and the HF solution and HNO in the corrosion solution 3 solution and H 2 SO 4 The volume ratio of the solution is 1:2.3:8, and refer to Example 1 for other methods.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the technical field of polysilicon suede processing, and specifically relates to a polysilicon surface light trapping microstructure processing method. The method specifically comprises the following steps: 1, preparing corrosion solution, placing polysilicon in the corrosion solution for carrying out chemical corrosion and processing the surface of the polysilicon; 2, starting supersonic phase array equipment, wherein the supersonic wave generated by the supersonic phase array equipment is propagated in the corrosion solution and generates a sound radiation force, and the sound radiation force controls corrosion particles in the corrosion solution to be centralized towards a focusing region. The focusing region can be deflected, and the deflection of the focusing region is achieved through the time-space control of a phase array supersonic wave beam. The surface of the polysilicon can be processed in a directional manner, thereby obtaining a polysilicon surface light trapping microstructure. The method is simple in technology, achieves the recombination of chemical corrosion and a supersonic phase array, achieves the positioning processing of the surface of the polysilicon through the deflection of the supersonic phase array sound beam and focusing, and is good in adaptability.

Description

technical field [0001] The invention belongs to the technical field of polysilicon suede processing, and in particular relates to a processing method for a light-trapping microstructure on a polysilicon surface. Background technique [0002] Solar energy is an important renewable energy source for human beings. A solar cell made of photovoltaic effect is a device that can directly convert sunlight into electrical energy. Photovoltaic power generation has the advantages of safety and reliability, no noise, zero pollution emissions, less constraints, low failure rate, and easy maintenance. Silicon-based materials are the raw materials for making solar cells. According to the different materials used, solar cells can be divided into monocrystalline silicon solar cells, polycrystalline silicon solar cells, and polycrystalline silicon thin-film solar cells. Among them, polycrystalline silicon solar cells account for 45% of global photovoltaic products. %about. The cost of polyc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L31/02363Y02P70/50
Inventor 吴立群郭亚杰
Owner HANGZHOU DIANZI UNIV