Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

High-temperature nitridation airflow field control device and method

The technology of a control device and a control method, which is applied in the field of airflow control, can solve the problem of uneven distribution of nitrogen gas flow field and the like

Active Publication Date: 2016-09-21
NAT UNIV OF DEFENSE TECH
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a high-temperature nitriding gas flow field control device and its control method, which solves the technical problem of uneven nitrogen gas flow field distribution in the high-temperature nitriding process in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-temperature nitridation airflow field control device and method
  • High-temperature nitridation airflow field control device and method
  • High-temperature nitridation airflow field control device and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] (1) 100g of non-melting PCS fiber samples, fiber monofilament diameter 14 microns, placed in the constant temperature zone of high-temperature furnace, replaced with high-purity argon three times to remove the air in the furnace; (2) heating up to 3°C / min speed 300°C; (3) Introduce high-purity ammonia gas at a flow rate of 5L / min, and high-purity argon gas flow rate at 5L / min; (4) Raise the temperature to 1200°C at a rate of 3°C / min, keep it warm for 1h, and cool naturally to At room temperature, high temperature nitriding is completed. The average nitrogen content of the obtained nitrided fiber is 38.5wt%, the oxygen content is 0.76wt%, and the difference between the fiber nitrogen content at the near end and the far end of the air inlet is less than 0.5wt%. The test results of the nitrogen content of each part of the product obtained in this example are listed in Table 1.

[0049] The nitrogen content of each part of the product obtained in table 1 embodiment 1

[0...

Embodiment 2

[0054] (1) Press 100g of N-methylpolyborazane sample into a disc with a diameter of 100mm, place it in the constant temperature zone of the high-temperature furnace, and replace it with high-purity argon three times to remove the air in the furnace; (2) at 1°C Raise the temperature to 400°C at a speed of 5°C / min; (3) feed high-purity ammonia gas with a flow rate of 1L / min, and a flow rate of high-purity argon gas of 4L / min; (4) heat up to 1500°C at a speed of 5°C / min, Keep it warm for 1 hour, then cool it down to room temperature naturally, and complete the high temperature nitriding. The obtained boron nitride sample has an average nitrogen content of 56.2wt%, an oxygen content of 0.88wt%, and the difference in nitrogen content between the near end and the far end of the gas inlet is less than 0.5wt%.

Embodiment 3

[0056] (1) Press 100g of polyborosilazane into a square sheet of 50mm×500mm, place it in the constant temperature zone of the high-temperature furnace, and replace it with high-purity argon three times to remove the air in the furnace; (2) at a speed of 2°C / min Raise the temperature to 500°C; (3) feed high-purity ammonia gas at a flow rate of 2L / min, and high-purity argon gas flow rate of 4L / min; (4) raise the temperature to 1350°C at a rate of 4°C / min, keep it warm for 1h, and naturally Cooling to room temperature completes high temperature nitriding. The average nitrogen content of the obtained silicon boron nitrogen thin film sample is 45.6wt%, the oxygen content is 1.02wt%, and the difference between the sample nitrogen content at the near end and the far end of the gas inlet is less than 0.5wt%.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a high-temperature nitridation airflow field control device and method. The control device comprises an impeller used for driving gas in a furnace body to flow, a first gas inlet used for feeding ammonia gas and a second gas inlet used for feeding power gas for driving the impeller to rotate, the first gas inlet is arranged below the impeller, the second gas inlet is arranged above the side of the impeller, and the power gas is argon. According to the high-temperature nitridation airflow field control device, the impeller driven by argon is arranged on the inner wall of a furnace door of the device, on one hand, ammonia gas and argon in the furnace are mixed to be uniform by means of rotation of the impeller; on the other hand, fed argon also can serve as diluent gas of high-purity ammonia gas to adjust the concentration of ammonia gas in the furnace.

Description

technical field [0001] The invention relates to the technical field of airflow control, in particular to a high-temperature nitriding airflow field control device and a control method thereof. Background technique [0002] High-temperature nitriding is the key technology for preparing nitride ceramics by conversion of organic precursors. There are many kinds of nitride ceramics, including silicon nitride, boron nitride, aluminum nitride, titanium nitride, zirconium nitride, SiON, SiBN, SiAlON and other ceramics, which have excellent high temperature resistance and special dielectric properties. Materials widely used in aviation, aerospace, machinery, electronics, precision instruments and other fields. [0003] The above materials can be synthesized by inorganic synthesis techniques such as powder sintering, and can also be prepared by conversion of organic precursors. The conversion method of organic precursors is especially suitable for preparing large-scale, complex-sha...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C04B35/583C04B35/584C04B35/622C04B35/64
CPCC04B35/583C04B35/584C04B35/62218C04B35/62295C04B35/64C04B2235/465C04B2235/483C04B2235/656
Inventor 邵长伟王军王浩王小宙
Owner NAT UNIV OF DEFENSE TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com