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High-throughput preparation device and method for high-silicon aluminum alloy structural gradient material used for packaging

A technology of high-silicon aluminum alloy and structural gradient, which is applied in the field of material processing, can solve the problems affecting the application of high-silicon aluminum alloy, mechanical and welding performance deterioration, etc., and achieve excellent comprehensive performance, high density, and wide equipment practicability Effect

Active Publication Date: 2016-09-28
SUZHOU XINHUILIAN SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As the silicon content in the alloy increases, the thermal expansion coefficient of the alloy gradually decreases, but its mechanical and welding properties become poor, which seriously affects the application of high-silicon aluminum alloys in the field of electronic packaging.

Method used

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  • High-throughput preparation device and method for high-silicon aluminum alloy structural gradient material used for packaging

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preparation example Construction

[0034] The high-throughput preparation method of the high-silicon aluminum alloy structure gradient material for packaging of the present invention comprises the following steps:

[0035] Step 1, providing atomized powder for preparing gradient high-silicon aluminum alloy, the main components (mass percentage, wt.%) of the atomized powder of gradient high-silicon aluminum alloy are Al-50wt.%Si, Al-20wt.% Si, Al-12.6wt.%Si. The gradient encapsulation material prepared by the invention can be powders with two different mass fractions, or powders with three different mass fractions.

[0036] Step 2: Select two or three kinds of atomized powders of the gradient high-silicon aluminum alloys prepared above, and add the low-composition alloy powder at the bottom of the outer mold, and the high-composition alloy powder at the top of the outer mold. Volume percent 5 (high composition): 1 (low composition). Firstly, alloy powder with low silicon content is spread on the bottom of the ...

example 1

[0039] Example 1: Al-20wt.%Si / Al-12.6wt.%Si Gradient Alloy

[0040]According to step 1, select Al-20wt.%Si and Al-12.6wt.%Si atomized alloy powder to prepare gradient alloy, and according to step 2, firstly put Al-12.6wt.%Si atomized with a thickness of 10mm at the bottom of the mold Alloy powder, followed by Al-20wt.%Si alloy powder with a thickness of 50mm. A pressure of 10KN was applied to the added powder at room temperature. According to step 3, the induction coil is used to heat the cold-pressed powder. According to step 3, the highest sintering temperature of Al-20wt.%Si alloy powder is 520°C, and the highest sintering temperature of Al-12.6wt.%Si alloy powder is 450°C. The induction coil first heats the high-composition alloy. When the maximum temperature of the powder reaches 520°C controlled by the thermocouple, the induction coil starts to reduce the power and moves to the lower end of the mold. When moving to the sample gradient area, the temperature control does...

example 2

[0041] Example 2: Al-50wt.%Si / Al-20wt.%Si gradient alloy

[0042] According to step 1, select Al-50wt.%Si and Al-20wt.%Si atomized alloy powder to prepare gradient alloy, and according to step 2, first put Al-20wt.%Si atomized alloy powder with a thickness of 10mm at the bottom of the mold , followed by adding Al-50wt.%Si alloy powder with a thickness of 50mm. A pressure of 10KN was applied to the added powder at room temperature. According to step 3, use the induction coil to heat the cold-pressed powder. According to step 3, the highest sintering temperature of Al-50wt.%Si alloy powder is 570°C, and the highest sintering temperature of Al-20wt.%Si alloy powder is 520°C. The induction coil first heats the high-composition alloy. When the maximum temperature of the powder reaches 570°C controlled by the thermocouple, the induction coil starts to reduce the power and moves to the lower end of the mold. When moving to the sample gradient area, the temperature control does not ...

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Abstract

The invention discloses a high-throughput preparation device and method for a high-silicon aluminum alloy structural gradient material used for packaging. The device comprises an upper high-temperature die, outer die moulds, induction coils, a gradient workpiece, cooling water circulating devices, a lower low-temperature die and thermocouples, wherein the upper high-temperature die is used for keeping the inner temperature of the whole die balancing and supplying a certain heat source to atomized powder of the high-silicon aluminum alloy; the outer die moulds are used for positioning two or three kinds of the prepared atomized powder of the gradient high-silicon aluminum alloy; the atomized powder of the high-silicon aluminum alloy is fed based on the sequence that the low-component alloy powder is at the bottom end of each outer die mould, and the high-component aluminum powder is at the top end of each outer die mould; the induction coils can be used as movable induction heating elements for supplying heat to the whole preparation process; the gradient workpiece is used for preparing the gradient material; the cooling water circulating devices can be used for exporting excess heat when the temperature in the preparation process is beyond a set temperature; the temperature of the lower low-temperature die is in contrast to the temperature of the upper high-temperature die, so that temperature gradient can be generated; the thermocouples are used for testing the temperature and controlling the induction heating time, so as to generate the temperature gradient. The alloy prepared by the device and the method is high in density, and the structure is refined, so that the alloy is outstanding in comprehensive performances.

Description

technical field [0001] The invention relates to the technical field of material processing, in particular to a high-throughput preparation device and method for a high-silicon aluminum alloy structural gradient material for packaging. Background technique [0002] Electronic packaging mainly plays the role of sealing, heat dissipation and shielding, which has an important impact on the stability of the device. At the same time, it also provides mechanical support for fine electronic circuits and serves as a conductive connection medium. In the electronic packaging system of modern fighter jets and missiles, the bare chip is integrated on the bottom of the packaging box, which requires the expansion coefficient of the packaging shell to match the GaAs or Si chip and have good heat dissipation performance; on the other hand, the side wall of the packaging shell and the upper cover are supported. And protection, must have good mechanical properties, air tightness and weldabilit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C1/05C22C21/02B22F3/10
CPCB22F3/1017B22F2999/00C22C1/05C22C21/02B22F2202/07
Inventor 贾延东王刚易军翟启杰
Owner SUZHOU XINHUILIAN SEMICON TECH CO LTD
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