Middle temperature sintering thick-film resistance paste based on high-temperature-resistant flexible substrate and preparation method thereof

A high-temperature flexible, thick-film resistor technology, applied in thick-film resistors, conductive materials dispersed in non-conductive inorganic materials, resistors, etc., can solve the problem of low tensile strength and achieve improved adhesion and flexibility High, strong adhesion effect

Inactive Publication Date: 2016-09-28
DONGGUAN COREHELM ELECTRONICS MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Most of the thick-film resistor pastes based on flexible substrates in the prior art can only realize electrothermal conversion at low voltage. At the sam...

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] A medium-temperature sintered thick-film resistor paste based on a high-temperature-resistant flexible substrate, which includes the following materials by weight, specifically:

[0040] Inorganic binder phase 30%

[0041] Composite functional phase 49%

[0042] Manganese dioxide 1%

[0043] Organic vehicle 20%;

[0044] Wherein, the inorganic bonding phase includes the following materials by weight, specifically:

[0045] SiO 2 40%

[0046] Bi 2 o 3 15%

[0047] B 2 o 3 25%

[0048] P 2 o 5 7.5%

[0049] al 2 o 3 7.5%

[0050] Li 2 O 2.5%

[0051] CaF 2 2.5%;

[0052] Wherein, the composite functional phase includes the following materials by weight, specifically:

[0053] Micron flake silver powder 45%

[0054] Micron spherical silver powder 35%

[0055] Nano silver powder 20%;

[0056] Wherein, the organic carrier includes the following materials by weight, specifically:

[0057] N-Methylpyrrolidone 60%

[0058] Polyvinyl acetate 20% ...

Embodiment 2

[0073] A medium-temperature sintered thick-film resistor paste based on a high-temperature-resistant flexible substrate, which includes the following materials by weight, specifically:

[0074] Inorganic binder phase 20%

[0075] Composite functional phase 50%

[0076] Cuprous oxide 2.5%

[0077] Organic vehicle 27.5%;

[0078] Wherein, the inorganic bonding phase includes the following materials by weight, specifically:

[0079] SiO 2 20%

[0080] Bi 2 o 3 20%

[0081] B 2 o 3 30%

[0082] P 2 o 5 10%

[0083] al 2 o 3 10%

[0084] Li 2 O 5%

[0085] CaF 2 5%;

[0086] Wherein, the composite functional phase includes the following materials by weight, specifically:

[0087] Micron flake silver powder 35%

[0088] Micron spherical silver powder 40%

[0089] Nano silver powder 25%;

[0090] Wherein, the organic carrier includes the following materials by weight, specifically:

[0091] N, N-Dimethylformamide 65%

[0092] Polyvinyl formal 15%

[0...

Embodiment 3

[0107] A medium-temperature sintered thick-film resistor paste based on a high-temperature-resistant flexible substrate, which includes the following materials by weight, specifically:

[0108] Inorganic binder phase 15%

[0109] Composite functional phase 60%

[0110] Ferric oxide 3%

[0111] Organic vehicle 22%;

[0112] Wherein, the inorganic bonding phase includes the following materials by weight, specifically:

[0113] SiO 2 30%

[0114] Bi 2 o 3 20%

[0115] B 2 o 3 25%

[0116] P 2 o 5 7.5%

[0117] Al 2 o 3 7.5%

[0118] Li 2 O 5%

[0119] CaF 2 5%;

[0120] Wherein, the composite functional phase includes the following materials by weight, specifically:

[0121] Micron flake silver powder 40%

[0122] Micron spherical silver powder 40%

[0123] Nano silver powder 20%;

[0124] Wherein, the organic carrier includes the following materials by weight, specifically:

[0125] N-Methylpyrrolidone 60%

[0126] Polyvinyl alcohol 20%

[0127] ...

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Abstract

The invention discloses middle temperature sintering thick-film resistance paste based on a high-temperature-resistant flexible substrate and a preparation method thereof. The thick-film resistance paste comprises an inorganic bonding phase, a composite function phase, a TCR regulator and an organic carrier. The inorganic bonding phase is formed by SiO2, Bi2O3, B2O3, P2O5, Al2O3, Li2O and CaF2; the composite function phase is formed by micron flake silver powders, micron spherical silver powders and nanometer silver powders; and the organic carrier is formed by organic solvents, macromolecule thickeners, high-temperature-resistant organic resin, surfactants, plasticizers, dispersants, antifoaming agents and thixotropic agents. The preparation method comprises the steps of preparation of the inorganic bonding phase, preparation of the composite function phase, preparation of the organic carrier and preparation of the resistance paste. The thick-film resistance paste is low in sintering temperature, short in sintering time, large in adhesive force, resistant to aging, high in flexibility, adjustable in square resistance, low and adjustable in resistance temperature coefficient and excellent in printing characteristic and sintering characteristic, and can be matched with the high-temperature-resistant flexible substrate.

Description

technical field [0001] The invention relates to the technical field of electronic materials, in particular to a medium-temperature sintered thick-film resistor paste and a preparation method based on a high-temperature-resistant flexible substrate. Background technique [0002] In the field of electric heating, new heating elements require small size, high power, small thermal inertia, large surface thermal load, low power consumption, high thermal efficiency, fast thermal start, stable power, uniform stable field, good manufacturability, and self-controlled temperature of the body. , safe and reliable operation, long service life, and wide application range, so thick film heating elements are required. Thick-film resistor paste is the basic material for manufacturing thick-film components. Thick-film heating resistors are usually based on gold, silver, platinum, palladium, ruthenium dioxide and other precious metal powders or their oxides, and added glass as an inorganic bi...

Claims

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Application Information

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IPC IPC(8): H01B1/22H01B13/00C03C12/00H01C7/00
CPCH01B1/22C03C12/00H01B13/00H01C7/003
Inventor 高丽萍苏冠贤
Owner DONGGUAN COREHELM ELECTRONICS MATERIAL TECH CO LTD
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