Semiconductor device and preparation method thereof, and electronic device

Abstract

The present invention relates to a semiconductor device and a preparation method thereof, and an electronic device. The semiconductor device comprises: a semiconductor substrate; a plurality of fin structures located on the semiconductor substrate; a break-through stop layer located in channel regions in the fin structures; and a diffusion stop layer located in the fin structures and breaking through the top of the break-through stop layer. A carbon diffusion stop layer is introduced to prevent a channel stop layer from ion injecting and diffusing to a channel so as to avoid the decreasing of the mismatch performance of the semiconductor device caused by random doping fluctuation (RDF); and moreover, the carbon diffusion stop layer is helpful for reducing the loss of the ion injection B doping of the NMOS break-through stop layer.

Description

technical field [0001] The present invention relates to the field of semiconductors, in particular, the present invention relates to a semiconductor device, a preparation method thereof, and an electronic device. Background technique [0002] With the continuous development of semiconductor technology, in order to improve the performance of the device, the size of integrated circuit devices needs to be continuously reduced. With the continuous reduction of the size of CMOS devices, the development of three-dimensional designs such as fin field effect transistors (FinFET) has been promoted. [0003] Compared with the existing planar transistors, the FinFET device has superior performance in terms of channel control and short channel effect reduction; the planar gate structure is arranged above the channel, and the gate in the FinFET The fins are arranged around the fins, so static electricity can be controlled from three sides, and the performance in static electricity contro...

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Problems solved by technology

[0005] FINFET devices have excellent channel control ability and short channel effect, but in Bulk FINFET, because the bottom is easy to penetrate, the short channel effect is enhanced and the leakage is increased

There are many methods in the prior art to improve the performance of semiconductor devices, such as performing multiple ion implantation steps in the manufacturing process of semiconductor devices, including the formation of well regions and channel blocking ion implantation by ion implantation. B or BF 2 Ion implantation, but B ions are easily diffused into the shallow trench isolation oxide. The loss of B doping and the decrease in mismatch performance are due to the diffusion of punchthrough imp doping into the channel of the FINFET device. It will reduce the mismatch performance caused by random doping fluctuation (Random Doping Fluctuation, RDF); in addition, after forming the fin of FinFET, it is necessary to implement channel stop implantation to control the partial depletion caused by the bottom of the fin. source / drain punch-through

If the implanted ions for channel stop implantation are boron ions or boron fluorine ions, boron ions or boron fluoride ions are easy to diffuse to the isolation structure during the subsequent heat treatment, resulting in a dose of boron ions or boron fluoride ions located in the channel region Loss, does not play a role in controlling source / drain punch-through

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