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Technology for preparing nano-metallic oxide powder with DC (direct-current) plasma method

A nano-metal and oxide powder technology, applied in the direction of tin oxide, nanotechnology, gallium/indium/thallium compounds, etc., can solve the problems of easy agglomeration of nanoparticles, complicated preparation process, environmental pollution, etc., and achieve good particle dispersion, The effect of simple process and high purity

Active Publication Date: 2016-10-26
725TH RES INST OF CHINA SHIPBUILDING INDAL CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Preparation of nano-In by chemical wet method 2 o 3 and nano SnO 2 The main disadvantage is that the preparation process is complicated, the prepared nanoparticles are easy to agglomerate, and secondary purification is required, which seriously pollutes the environment.

Method used

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  • Technology for preparing nano-metallic oxide powder with DC (direct-current) plasma method
  • Technology for preparing nano-metallic oxide powder with DC (direct-current) plasma method
  • Technology for preparing nano-metallic oxide powder with DC (direct-current) plasma method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Preparation of Nano SnO by a Direct Current Plasma Method 2 The powder method, the steps are as follows:

[0026] Take a bulk metal tin ingot (purity >99.99%), put it into a melting furnace, heat and melt it to 600°C, and keep it warm for 1h. Connect the catheter, and electromagnetically heat the catheter to 650°C and keep it warm.

[0027] Vacuum the reaction chamber to 10 -2 MPa, filled with cooling air at 10-20°C, and cooling water is passed into the interlayer of the reactor. Turn on the power supply of the arc plasma gasification system, adjust the gasification current of the reactor to 10-2000A, and the voltage to 5-400V. Introduce argon gas into the tin melting furnace to form a stable melt jet and start the gasification reaction. The gasification of tin liquid under the action of high temperature plasma in the reaction and the O in the air 2 React, form atomic clusters, and aggregate into SnO 2 Nanoparticles settle into the collection chamber with the cold...

Embodiment 2

[0031] Preparation of Nano-In by a DC Plasma Method 2 o 3 The powder method, the steps are as follows:

[0032] Take the bulk metal indium ingot (purity >99.99%), put it into the melting furnace, heat and melt it to 300°C, and keep it warm for 1h. Connect the catheter, and electromagnetically heat the catheter to 400°C and keep it warm.

[0033] Vacuum the reaction chamber to 10 -2 MPa, filled with cooling air at 10-20°C, and cooling water is passed into the interlayer of the reactor. Turn on the power supply of the arc plasma gasification system, adjust the gasification current of the reactor to 10-2000A, and the voltage to 5-400V. Pass argon gas into the indium melting furnace to form a stable melt jet and start the gasification reaction. Gasification of liquid indium under the action of high-temperature plasma in the reaction and O in the air 2 React, form atomic clusters, and aggregate into In 2 o 3 Nanoparticles settle into the collection chamber with the cold win...

Embodiment 3

[0037] The process for preparing nano metal oxide powder by DC plasma method comprises the following steps:

[0038] Step 1. Put the block high-purity metal indium into the melting furnace, melt it at 600°C, and keep it warm for 1 hour to obtain a metal melt; electromagnetically heat the catheter connected to the furnace, and heat the catheter to 650°C. maintain that temperature;

[0039] Step 2. Vacuumize the reaction chamber to 10MPa, fill it with cooling air at 20°C, and pass cooling water into the interlayer of the reactor placed in the reaction chamber;

[0040] Step 3. Turn on the power supply of the arc plasma gasification system of the reactor, adjust the gasification current to 2000A, and the voltage to 400V;

[0041] Step 4. Pass inert gas into the molten metal in the melting furnace in step 1, drain it with a catheter, pass it into the reactor, and carry out gasification reaction to form a metal jet;

[0042] Step 5. The metal jet is gasified under the action of the...

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Abstract

A technology for preparing nano-metallic oxide powder with a DC (direct-current) plasma method comprises steps as follows: a high-purity metal block is put into a smelting furnace and is melted, and a melt delivery tube connected with the smelting furnace is heated; a reaction chamber is subjected to vacuum pumping until the pressure reaches 2-10 MPa, cooling air is introduced into the reaction chamber, and cooling water is introduced into a reactor interlayer arranged in the reaction chamber; an arc plasma gasification system power source of a reactor is switched on, gasification current is adjusted to 10-2,000 A, and voltage is adjusted to 5-400 V; inert gas is introduced into the metal melt, the melt delivery tube is adopted for flow guidance, the gasification reaction is performed, and metal jet is formed; the metal jet is gasified under the action of arc plasma so as to form atomic clusters, the atomic clusters are subjected to a reaction with oxygen, oxide nanoparticles are formed, is condensed under cold-air negative pressure and enters a powder collecting chamber with cold air flow, and the nano-metallic oxide powder is obtained. The technology is simple, does not need a plasma source and has high yield, and the prepared nano-metallic oxide powder is not prone to agglomeration, is high in purity and facilitates large-scale production.

Description

technical field [0001] The invention relates to a preparation process of nanometer materials, in particular to a process for preparing nanometer metal oxide powder by a direct current plasma method. Background technique [0002] The patent publication number is CN1381304, and the Chinese invention patent titled "Device and method for preparing micron and nanoscale powder materials by DC arc plasma" has applied for and disclosed the preparation of oxide raw materials by physical vapor deposition directly by using a plasma heat source. Micro-nano Sb 2 o 3 , SiO 2 and other powders. The patent publication number is CN102515233, and the Chinese invention patent titled "A Method for Preparing Alumina Using Thermal Plasma and Its Products" applies for and discloses the preparation of micronano-alumina by using a thermal plasma source to gasify aluminum powder Powder. These two methods both use an external plasma heat source to vaporize the material, and then deposit it to pre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G15/00C01G19/02B82Y40/00
CPCC01G15/00C01G19/02C01P2002/72C01P2004/04C01P2004/64C01P2006/80
Inventor 谢斌刘冠鹏李龙腾王政红
Owner 725TH RES INST OF CHINA SHIPBUILDING INDAL CORP
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