Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor optical modulator and optical module

A light modulator, semiconductor technology, applied in the direction of instruments, optics, nonlinear optics, etc., can solve the problem of large modulation loss and achieve the effect of improving linearity

Active Publication Date: 2016-10-26
MITSUBISHI ELECTRIC CORP
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the LN-MZ modulator, the light absorption during driving can be ignored, so the modulation loss is small, but the maximum value of 2Vπ (Vπ is the half-wavelength voltage) is about 6V, which is relatively large
On the other hand, in the semiconductor MZ modulator, 2Vπ is about 3V at the maximum, which is smaller than that of the LN-MZ modulator, but light absorption occurs during operation, so the modulation loss during transmission is large

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor optical modulator and optical module
  • Semiconductor optical modulator and optical module
  • Semiconductor optical modulator and optical module

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0079] In LN-MZ modulators as well as semiconductor MZ modulators, it is not the voltage but the electric field that directly determines the refractive index change. Image 6 The dotted line in is an example of a typical relationship between the reverse bias voltage and the phase of light for a structure using AlGaInAs, which is a quaternary mixed crystal semiconductor, in the quantum well structure. exist Image 6 In , the horizontal axis represents the reverse bias voltage (V), and the vertical axis represents the phase. In addition, the phase on the vertical axis corresponds to the refractive index change Δn.

[0080] like Image 6 As shown, the relationship between reverse bias voltage and phase (change in birefringence index) is not a straight line, but close to a quadratic curve. but, Image 6 The solid line is a line obtained by shifting the dotted line to the lower voltage side so that the electric field becomes larger even at the same voltage. In the case where s...

Embodiment approach 2

[0108] Hereinafter, in the semiconductor optical modulator according to the second embodiment of the present invention, the same or similar components as those in the first embodiment will be assigned the same reference numerals, and the different components will be mainly described.

[0109] The cross-sectional structure of the phase modulator 107 of the semiconductor optical modulator according to the second embodiment is the same as the cross-sectional structure of the first embodiment ( image 3 ) are roughly the same. The phase modulator 107 has a high-mesa structure, and on the semi-insulating InP substrate 9, an N-type cladding layer 10 made of N-InP doped with S or Se, and a multi-quantum well structure made of an active layer are formed. 11. The P-type cladding layer 12 made of P-InP doped with Be or Zn and the signal electrode 13 are stacked in this order.

[0110] Figure 11 It is a diagram showing an energy band diagram of the phase modulator 107 according to the...

Embodiment approach 3

[0135] Figure 19 It is a plan view showing the structure of the optical module according to Embodiment 3 of the present invention. Figure 19 The optical module includes a variable-wavelength laser light source 201 , a wavelength monitor PD (photodiode) 202 having a standard gauge, etc., a semiconductor optical modulator 204 and an optical monitor PD (photodiode) 203 according to Embodiment 1 or 2. which is, Figure 19 The optical module for uses the semiconductor optical modulator of Embodiment 1 or 2. Here, the variable wavelength laser light source 201 is controlled by feedback based on the output of the wavelength monitor PD202 (measurement result of the wavelength of the output light) and the output of the optical monitor PD203 (measurement result of the light intensity of the output light). Thus, light oscillating at a desired wavelength is output from the variable wavelength laser light source 201 . Along with this control, the DC bias voltage of the semiconductor o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a semiconductor optical modulator and a light module, the invention aims to provide a technology capable of enabling alpha parameters to be close to zero. Multi-quantum well configuration (11)the device includes a first barrier layer (11a), an intermediate layer (11B), a well layer, and a well layer (11c)and a layer structure of the second barrier layer (11dA). The first barrier layer and the second barrier layer are both made of a first barrier layer and a second barrier layer (11a,11d), the conduction band energy of the conduction band energy and the middle layer (11Be) of the middle layer (11B), the conduction band energy of the middle layer (11Be), the conduction band energy of the middle layer (11B), the conduction band energy of the middle layer (11c). The energy of the conduction band of the middle layer is increased according to the sequence (11B)the valence band energy of the valence band energy and the valence band energy of the well layer (11c), the valence band energy of the first barrier layer and the second barrier layer (11a,11d)) is changed according to the order.

Description

technical field [0001] The present invention relates to, for example, semiconductor optical modulators such as semiconductor Mach-Zehnder modulators, which are widely used in long-distance optical communications in trunk systems, and optical modules. Background technique [0002] Optical modulators used in optical communication systems are roughly divided into electric field absorption (EA) modulators for intensity modulation and Mach-Zehnder (MZ) modulators for phase modulation. In the MZ modulator, the chirp (wavelength fluctuation) of the wavelength can be reduced compared with the EA modulator, so the MZ modulator is particularly suitable for long-distance transmission. [0003] MZ modulators are classified into LiNbO 3 MZ modulators made of (LN) materials (LN-MZ modulators) and the use of refractive index changes accompanying light absorption changes in semiconductor materials, especially through the quantum-confined Stark effect to increase the refractive index change...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/017
CPCG02F1/01716
Inventor 秋山浩一柳生荣治
Owner MITSUBISHI ELECTRIC CORP