A single-structure dual-logic-gate optical modulation device based on single-layer graphene

Abstract

The invention discloses a single-structure double-logic gate optical modulation device based on single-layer graphene. The device comprises three straight waveguides and two annular waveguides, and four coupling regions are formed among the adjacent waveguides in a coupling mode to serve as energy transfer regions; a graphene layer is embedded into the ridge-shaped region of a ridge-shaped silicon layer of part of the annular waveguides, the upper side and the lower side of the ridge-shaped region are each provided with a coplanar waveguide electrode in the bending direction same as that of the ridge-shaped silicon layer, and the coplanar waveguide electrodes are used for simulating loading and modulating of electric signals, changing the Fermi energy level of the graphene layer, causing changes of an absorption coefficient of the graphene layer and absorbing and modulating optical signals; the attenuation degree of the optical signals is determined according to the graphene waveguide modulating length, then optical energy is controlled to be output, and different logical functions are achieved. The device has an optical signal coupling modulation integration function and is low in transmission loss, high in response rate, low in driving voltage, wide in modulation bandwidth and high in integration degree, and a manufacturing technology of the device is compatible with a COMS digital integrated circuit technology.

Description

technical field [0001] The invention relates to an optical logic gate device, in particular to a single-structure double logic gate optical modulation device based on single-layer graphene. Background technique [0002] With the increasing expansion of the Internet and the continuous advancement of information technology, the requirements for information processing speed are also increasing. Although the calculation speed of the all-optical information processing system is much higher than that of the electronic system, the real all-optical network cannot be realized at this stage. In the existing communication network based on electronic technology, the network nodes must complete the optical-electrical-optical Conversion, photoelectric conversion efficiency has become the key to high-speed networks. In future optical communication systems, it is an inevitable development trend to manufacture integrated, high-speed, and miniaturized optical modulators. Among them, optical...

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Problems solved by technology

[0003] At present, due to the weak electro-optical characteristics of the material itself of the electroabsorption modulator based on the quantum well Stark effect or the bulk absorption effect, the size of the silicon-based modulator is too large

Other modulators based on germanium or other compound semiconductors are difficult to integrate with existing CMOS processes; and those integrated silicon modulators with high-efficiency optical resonators have strong modulation capabilities, but their modulation bandwidth is too large. Narrow, and requires extremely fine optical path design, as well as extremely strict production requirements and limited thermal stability, making its development subject to many restrictions

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