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Full back electrode contact crystalline silicon solar cell structure and preparation method thereof

A full-back electrode contact and solar cell technology, applied in the field of solar cells, can solve the problems of high material cost, recombination loss, and resistance loss, etc., and achieve the effects of reducing the amount of silver electrodes used, reducing recombination loss, and improving conversion efficiency

Inactive Publication Date: 2016-11-16
TAIZHOU LERRISOLAR TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the electrodes of crystalline silicon solar cells are mostly screen-printed with silver paste to form nearly a hundred fine grids and several main grids. The materials used in this process are expensive, and the silver electrodes will cause 5% to 7% of the surface of the cell. The area forms the shading of light, resulting in resistive loss and recombination loss at the same time
[0004] The back contact battery solves the light shielding problem of the metal grid wire because the metal electrode of the battery is wound back to the back of the battery, but the amount of silver or other conductive metals in the electrode has not been reduced, on the contrary, it is slightly higher than that of conventional batteries. Increase

Method used

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  • Full back electrode contact crystalline silicon solar cell structure and preparation method thereof
  • Full back electrode contact crystalline silicon solar cell structure and preparation method thereof
  • Full back electrode contact crystalline silicon solar cell structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] (1) The N-type monocrystalline silicon wafer is anisotropically etched in a KOH solution at about 80°C to obtain a pyramid structure on the surface.

[0057] (2) on the front side of the silicon chip, with PClO 3 As impurities, low-pressure thermal diffusion is performed at about 700-850°C to form a uniform N+ layer of 80Ω / □.

[0058] (3) The phosphorosilicate glass and the back junction on the front side are removed by wet etching.

[0059] (4) Deposit 20nm of silicon oxide on the front side of the silicon wafer, and then deposit 50nm of silicon nitride.

[0060] (5) An intrinsic amorphous silicon layer of about 10 nm is deposited on the back surface of the silicon wafer.

[0061] (6) On the intrinsic amorphous silicon layer on the back of the silicon wafer, a P and N-type amorphous silicon layer of about 10 nm is produced by chemical vapor deposition cooperative masking and photolithography, and the P and N-type amorphous silicon layers on the back Alternately arra...

Embodiment 2

[0069] (1) The N-type monocrystalline silicon wafer is anisotropically etched in a KOH solution at about 80°C to obtain a pyramid structure on the surface.

[0070] (2) by pH 3 As impurities, a uniform N+ layer of 100Ω / □ is formed on the front side of the silicon wafer by ion implantation.

[0071] (3) Perform annealing treatment on the silicon wafer after ion implantation.

[0072] (4) Deposit 20nm of silicon oxide on the front side of the silicon wafer, and then deposit 70nm of silicon nitride.

[0073] (5) A tunneling silicon oxide film of about 1.5 nm is deposited on the back side of the silicon wafer.

[0074] (6) On the tunneling silicon oxide film on the back of the silicon wafer, P and N-type amorphous silicon layers of 12 nm are alternately arranged by chemical vapor deposition cooperative masking and photolithography. The width of a single P-type amorphous silicon strip region on the back is 1.2mm, and the width of a single N-type amorphous silicon strip region on...

Embodiment 3

[0082] (1) The N-type monocrystalline silicon wafer is anisotropically etched in a KOH solution at about 80°C to obtain a pyramid structure on the surface.

[0083] (2) by pH 3As impurities, a uniform N+ layer of 100Ω / □ is formed on the front side of the silicon wafer by ion implantation.

[0084] (3) Perform annealing treatment on the silicon wafer after ion implantation.

[0085] (4) Chemically cleaning the doped silicon wafer.

[0086] (5) Deposit 80nm silicon nitride on the front side of the silicon wafer.

[0087] (6) An intrinsic amorphous silicon layer of about 13 nm is deposited on the back side of the silicon wafer.

[0088] (7) On the intrinsic amorphous silicon layer on the back of the silicon wafer, a P and N-type amorphous silicon layer of about 10 nm is produced by chemical vapor deposition cooperative masking and photolithography. Alternately arranged on the intrinsic amorphous silicon layer. The width of a single P-type amorphous silicon strip region on th...

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Abstract

The invention discloses a full back electrode contact crystalline silicon solar cell structure and a preparation method thereof. The full back electrode contact crystalline silicon solar cell structure sequentially comprises an antireflection film / passivation film, a front N+ doped layer, an N-type silicon substrate, an intrinsic amorphous silicon layer, a back alternately doped amorphous or polycrystalline silicon layer and a cell electrode from top to bottom, wherein the back doped layer is formed by alternately arranging N-type amorphous or polycrystalline silicon layers and P-type amorphous or polycrystalline silicon layers at intervals; fine metal wires are combined with corresponding local contact metal electrodes through corresponding conductive bonding materials to form locally suspended fine grid line electrodes; and electrode leads are arranged at opposite ends of a P-type amorphous or polycrystalline silicon region and an N-type amorphous or polycrystalline silicon region on the back surface of a cell for leading out collected current. The light shading area of grid lines is avoided, so that the conversion efficiency of the cell is improved; and meanwhile, the production cost is reduced through reducing the usage amount of metal paste.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a structure of a crystal silicon solar cell with full back electrode contact and a preparation method thereof. Background technique [0002] Since the first solar cell was born in Bell Laboratories in 1954, crystalline silicon solar cells have been widely used, the conversion efficiency has been continuously improved, and the production cost has continued to decline. At present, crystalline silicon solar cells account for more than 80% of the total global solar cell market, and the conversion efficiency of crystalline silicon cell production lines has exceeded 20%. The cost of electricity continues to shrink and is expected to be flat in the next few years. As a clean energy source, crystalline silicon solar cells play an increasingly important role in changing the energy structure and alleviating environmental pressure. [0003] If crystalline silicon solar cel...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/068H01L31/18
CPCH01L31/022441H01L31/0682H01L31/1804Y02E10/546Y02E10/547Y02P70/50
Inventor 李华钟宝申赵科雄
Owner TAIZHOU LERRISOLAR TECH CO LTD