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AZO coarsened layer-equipped high brightness AlGaInP light emitting diode and manufacturing method therefor

A technology of light-emitting diodes and a manufacturing method, which is applied to electrical components, circuits, semiconductor devices, etc., can solve problems such as high price and toxicity, and achieve the effects of simple methods, wide sources, and reduced accumulation.

Inactive Publication Date: 2016-11-16
YANGZHOU CHANGELIGHT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, In in indium tin oxide (ITO) is a scarce resource, expensive and toxic. It is hoped to find a transparent material to replace ITO

Method used

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  • AZO coarsened layer-equipped high brightness AlGaInP light emitting diode and manufacturing method therefor
  • AZO coarsened layer-equipped high brightness AlGaInP light emitting diode and manufacturing method therefor

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Embodiment Construction

[0027] The present invention is further described in conjunction with drawings and implementation.

[0028] 1. Manufacturing specific implementation steps:

[0029] 1. Fabrication of epitaxial chips by MOCVD technology: N-GaAs buffer layer 200, AlAs / AlGaAs reflective layer 201, N-AlGaInP lower confinement layer 202, MQW multi-quantum well active layer 203, a P-AlGaInP upper confinement layer 204, a P-GaInP buffer layer 205, and a P-GaP current spreading layer 206, wherein the thickness of the P-GaP current spreading layer 206 highly doped with magnesium is 4.5 μm to ensure that a good Ohmic contact, the doping concentration of magnesium is 8×10 17 cm -3 ~1×10 19 cm -3 .

[0030] 2. Clean the P-GaP current spreading layer 206 with 215 and 511 solutions on the epitaxial chip, and deposit a layer of SiO on the surface by PECVD 2 , in SiO 2 The positive photoresist is spin-coated on the layer, and after baking, exposure, baking, and development, the chip is spin-dried by a ...

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Abstract

An AZO coarsened layer-equipped high brightness AlGaInP light emitting diode and a manufacturing method therefor are disclosed and belong to the technical field of LED production and application. An N electrode is arranged on a back surface of a substrate; an N-GaAs buffer layer, an AIAs / AIGaAs reflection layer, N-AIGaInP lower limiting layer, an MQW multi-quantum well active layer, a P-AIGaInP upper limiting layer, a P-GaInP buffer layer and a P-GaP current expanding layer are orderly arranged on a front surface of the substrate; an AZO transparent electric conduction layer is arranged on the P-GaP current expanding layer; a P electrode is arranged on one part of the AZO transparent electric conduction layer, and an AZO coarsened layer is arranged on the other part of the AZO transparent electric conduction layer. The AZO transparent electric conduction layer is great in current expanding capability, accumulation of currents in a local area is reduced, and luminous efficiency is improved.

Description

technical field [0001] The invention belongs to the technical field of LED production and application, and in particular relates to a production process of an AlGaInP light-emitting diode, especially a chip thereof. Background technique [0002] Quaternary AlGaInP light-emitting diodes are widely used in various devices for indication and display due to their high luminous efficiency, wide color range, low power consumption, long life, monochromatic light emission, fast response, impact resistance, and small size. In terms of automotive interior indicator lights, home appliance indicator lights, traffic stop lights, and household lighting, how to meet the market's large demand for high-brightness chips and improve the brightness of LED chips has become the research focus of LED companies. Conventional vertical structure AlGaInP light-emitting diodes are based on the P-GaP current spreading layer for lateral expansion, injecting current into the light-emitting area, but due t...

Claims

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Application Information

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IPC IPC(8): H01L33/42H01L33/36H01L33/00
CPCH01L33/42H01L33/005H01L33/36H01L2933/0016
Inventor 肖和平王宇孙如剑郭冠军李威张英马祥柱
Owner YANGZHOU CHANGELIGHT