Preparation method for metalized layer of copper-indium-gallium-selenium target material

A technology of copper indium gallium selenide and metallization layer, which is applied in the direction of metal material coating process, coating, and final product manufacturing, and can solve the problems of poor film thickness uniformity and composition uniformity, poor electrical and thermal conductivity, and failure to meet solar energy requirements. Battery coating process conditions and other issues, to achieve the effects of reduced production costs, low interface resistance, and good thermal conductivity

Inactive Publication Date: 2016-12-07
GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS BEIJNG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Currently commonly used metallization processes include silver paste sintering, evaporation, sputtering, spraying, etc. The metallization layer formed by these processes has a weak bond with the substrate, cannot form a me

Method used

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  • Preparation method for metalized layer of copper-indium-gallium-selenium target material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Place a graphite backing plate 4 with a thickness of 10mm on the lower pressure head 5 of the hot-press furnace mold, then place a 1mm thick Ni metal sheet 3 on the graphite backing plate 4, and then put copper indium gallium selenide powder 2, copper Indium gallium selenide powder 2 contains Cu: 25%, In+Ga: 25%, Se: 50%, and then puts it into the upper pressure head 1, and puts the mold 6 in a hot-press furnace for hot-press sintering. While raising the temperature, the pressure was gradually increased to 30 MPa, kept at a temperature of 650° C. for 60 minutes, and then cooled to room temperature. Take the target out of the hot-press furnace, firstly grind the target surface, and then grind the metallized layer, the processing amount is 0.5mm. The metallized layer and the target substrate form a metallurgical bond, and the bonding rate between the target substrate and the metallized layer is greater than 98%, which can effectively conduct heat from the target surface. ...

Embodiment 2

[0026] Place a graphite backing plate 4 with a thickness of 15mm on the lower pressure head 5 of the hot-press furnace mold, then place a 1.2mm thick Mo metal sheet 3 on the graphite backing plate 4, and then put copper indium gallium selenide powder 2, The copper indium gallium selenide powder 2 contains Cu: 25%, In+Ga: 27.5%, and Se: 47.5%, and then put it into the upper pressure head 1, and put the mold 6 in a hot-press furnace for hot-press sintering, Slowly pressurize to 40 MPa while raising the temperature, keep the temperature at 700° C. for 40 minutes, and then cool to room temperature. Take the target out of the hot-press furnace, firstly grind the target surface, and then grind the metallized layer, the processing amount is 0.7mm. The metallized layer and the target substrate form a metallurgical bond, and the bonding rate between the target substrate and the metallized layer is greater than 98.5%, which can effectively conduct heat from the target surface.

Embodiment 3

[0028] Place a graphite backing plate 4 with a thickness of 13 mm on the lower pressure head 5 of the hot-press furnace mold, then place a Cu metal sheet 3 with a thickness of 1.5 mm on the graphite backing plate 4, and then put copper indium gallium selenide powder 2, The copper indium gallium selenide powder 2 contains Cu: 25%, In+Ga: 22.5%, Se: 52.5%, and then put it into the upper pressure head 1, and put the mold 6 in a hot-press furnace for hot-press sintering, Slowly pressurize to 35 MPa while raising the temperature, keep the temperature at 680° C. for 30 minutes, and then cool to room temperature. Take the target out of the hot-press furnace, firstly grind the target surface, and then grind the metallized layer, the processing amount is 0.9mm. The metallized layer and the target substrate form a metallurgical bond, and the bonding rate between the target substrate and the metallized layer is greater than 99%, which can effectively conduct heat from the target surface....

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Abstract

The invention relates to a preparation method for a metalized layer of a copper-indium-gallium-selenium target material, and belongs to the field of nonferrous metal processing. The metalized layer is prepared while the copper-indium-gallium-selenium target material is prepared. Firstly, a graphite cushion plate is arranged on a lower pressing head of a hot-press furnace mold, then, a metal sheet is placed on the graphite cushion plate, copper-indium-gallium-selenium powder is put in, an upper pressing head is put in, the mold is placed in a hot-press furnace to be subjected to hot-press sintering, pressurization is conducted during temperature rise, heat preserving and pressure keeping are conducted, and then cooling is conducted till the room temperature is obtained; and then, the target material is taken out of the hot-press furnace, the target face is firstly processed, the metalized layer is then processed, and the processing amount is determined according to the thickness of the required metalized layer. Brazing can be easily conducted on the metalized layer, obtained through the method, of the copper-indium-gallium-selenium target material; the electric-conducting property and the heat-conducting property are good; and cost is low, the preparation method is synchronous with the target material preparation process, and the production cost is greatly reduced.

Description

technical field [0001] The invention relates to a method for preparing a metallized layer of a copper indium gallium selenide target, especially to solve the problem that the copper indium gallium selenium target is difficult to be wetted by solder, and to prepare the metallized layer while preparing the copper indium gallium selenide target, which belongs to Non-ferrous metal processing field. Background technique [0002] Copper indium gallium selenide is a light-absorbing layer material for thin-film solar cells. It has the advantages of strong radiation resistance and stable working performance. Good electrical and thermal conductivity. [0003] At present, the common processes that can realize the connection between the target material and the metal include brazing method and fusion welding method. For the copper indium gallium selenide target, because the target is brittle and easy to volatilize, the fusion welding method is not suitable; while the brazing method nee...

Claims

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Application Information

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IPC IPC(8): B22F3/14C23C14/34H01L31/18
CPCY02P70/50
Inventor 吕宏谢元锋夏扬
Owner GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS BEIJNG
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