The invention relates to a preparation method for a metalized layer of a copper-indium-gallium-selenium target material, and belongs to the field of nonferrous metal processing. The metalized layer is prepared while the copper-indium-gallium-selenium target material is prepared. Firstly, a graphite cushion plate is arranged on a lower pressing head of a hot-press furnace mold, then, a metal sheet is placed on the graphite cushion plate, copper-indium-gallium-selenium powder is put in, an upper pressing head is put in, the mold is placed in a hot-press furnace to be subjected to hot-press sintering, pressurization is conducted during temperature rise, heat preserving and pressure keeping are conducted, and then cooling is conducted till the room temperature is obtained; and then, the target material is taken out of the hot-press furnace, the target face is firstly processed, the metalized layer is then processed, and the processing amount is determined according to the thickness of the required metalized layer. Brazing can be easily conducted on the metalized layer, obtained through the method, of the copper-indium-gallium-selenium target material; the electric-conducting property and the heat-conducting property are good; and cost is low, the preparation method is synchronous with the target material preparation process, and the production cost is greatly reduced.